JP4931042B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP4931042B2 JP4931042B2 JP2006108133A JP2006108133A JP4931042B2 JP 4931042 B2 JP4931042 B2 JP 4931042B2 JP 2006108133 A JP2006108133 A JP 2006108133A JP 2006108133 A JP2006108133 A JP 2006108133A JP 4931042 B2 JP4931042 B2 JP 4931042B2
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- drying
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- cleaning tank
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- 238000012545 processing Methods 0.000 title claims description 87
- 239000000758 substrate Substances 0.000 title claims description 50
- 238000001035 drying Methods 0.000 claims description 152
- 238000004140 cleaning Methods 0.000 claims description 64
- 239000012530 fluid Substances 0.000 claims description 41
- 239000000126 substance Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 238000007599 discharging Methods 0.000 claims description 7
- 239000007921 spray Substances 0.000 claims description 6
- 238000000638 solvent extraction Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 76
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 66
- 239000000243 solution Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 239000007788 liquid Substances 0.000 description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000004891 communication Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 229910001873 dinitrogen Inorganic materials 0.000 description 10
- 230000007246 mechanism Effects 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 7
- 239000003960 organic solvent Substances 0.000 description 7
- 238000003860 storage Methods 0.000 description 6
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012993 chemical processing Methods 0.000 description 3
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- 239000012159 carrier gas Substances 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000003779 heat-resistant material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 239000000057 synthetic resin Substances 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
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- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Drying Of Solid Materials (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Description
基板処理装置100は、図10に示すように、薬液や純水等が貯留され、この貯留された薬液等にウェーハWを浸漬して薬液・洗浄処理する洗浄槽101と、この洗浄槽101の上方に配置して洗浄槽101で薬液・洗浄処理されたウェーハWを乾燥処理する乾燥室102と、これらの洗浄槽101と乾燥室102とが連通穴で連結されてこの連絡穴を開閉するスライド扉を有したスライド扉機構Sと、乾燥室102の底部を閉鎖する回転扉機構Dとを備えた構成を有している。
さらに、2本の噴出ノズルは、乾燥室の上方の開口部に設けた拡張部に収納したので、ウェーハWの挿入・取出し時に噴射ノズルが邪魔になることがなくなる。
さらに、乾燥流体を2枚のシャッター扉で形成された排気穴を通して洗浄槽から吸引排気することにより、洗浄槽の排気設備の利用が可能になり、排気が容易になる。
先ず、乾燥室6の蓋体7を開けて、不図示の基板搬送機構を乾燥室6内へ下降させて、乾燥室6内の基板保持具(図示省略)に複数枚のウェーハWを受渡し、搬送機構を退去させた後に蓋体7を閉じ、ほぼ同時に乾燥室6下方のシャッター部材8を開け、ウェーハWが保持された保持具を下降させて、ウェーハWを内槽4内に移送し、シャッター部材8を閉じる。次いで、薬液供給源15から内槽4内の各供給口41〜45へ所定の薬液を供給してウェーハWの薬液処理を行う。なお、このとき、予め、内槽4内へ薬液を貯留して置き、この貯留された薬液にウェーハを浸漬するのが好ましい。その後、薬液の供給を停止し、直ちに薬液を排出することなく、薬液を貯留した状態で純水供給源16から各供給口4 1 〜4 5 へ純水を供給して徐々に薬液を希釈しながら内槽4内を薬液から純水へ置換してウェーハWの水洗い洗浄を行う。
2、2' 処理装置
3 洗浄槽
4 内槽
5 外槽
6 乾燥室
7 蓋体
8、8'、35、45、50 シャッター部材
81、82 第1、第2排気口
83 開口
91 排気穴
10、30 シャッター装置
Claims (1)
- 薬液や純水等の処理液を貯留し、この貯留された処理液に被処理基板を浸漬して処理する洗浄槽と、前記洗浄槽の上方に配置して洗浄済み被処理基板を前記洗浄槽から引上げて乾燥処理する乾燥室とを備え、当該乾燥室には乾燥流体を導く2本の噴射ノズルを設けた基板処理装置において、乾燥室の上方の開口部には、両側が外側へ拡張された拡張部を設け、この拡張部に上記噴出ノズルを収納する一方、前記洗浄槽と前記乾燥室との間には、これらの間を仕切るシャッター部材をスライド移動自在に配設し、前記シャッター部材は、相対移動可能に対向させた一対のシャッター扉からなり、これらシャッター扉にはそれぞれ複数の小穴を形成し、一対のシャッター扉に形成された互いに対向する小穴が相まって、上記乾燥室内の乾燥流体を洗浄槽に排出する排気穴を構成するとともに、上記シャッター扉を相対移動させて上記排気穴の大きさを調整可能にし、上記洗浄槽の底面に排出口を形成し、上記乾燥室内の乾燥流体を上記シャッター部材の排気穴を通して洗浄槽に排出させるとともに、この洗浄槽に排出された乾燥流体を上記排出口から排気する構成にした基板処理装置。
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JP2006108133A JP4931042B2 (ja) | 2006-04-10 | 2006-04-10 | 基板処理装置 |
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JP2006108133A JP4931042B2 (ja) | 2006-04-10 | 2006-04-10 | 基板処理装置 |
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JP2011255850A Division JP2012039163A (ja) | 2011-11-24 | 2011-11-24 | 基板処理装置 |
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JP2007281311A JP2007281311A (ja) | 2007-10-25 |
JP4931042B2 true JP4931042B2 (ja) | 2012-05-16 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US20100269365A1 (en) * | 2008-05-16 | 2010-10-28 | Miller Kenneth C | System and Method for Alternating Fluid Flow |
FR2983978B1 (fr) * | 2011-12-08 | 2014-01-10 | Pierre Faucheur | Procede et installation de nettoyage de bandes |
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JP4311809B2 (ja) * | 1998-05-07 | 2009-08-12 | ソニー株式会社 | 半導体基板の乾燥装置および半導体基板の乾燥方法 |
KR100568103B1 (ko) * | 2003-08-19 | 2006-04-05 | 삼성전자주식회사 | 반도체 기판 세정 장치 및 세정 방법 |
DE102004044394A1 (de) * | 2003-11-04 | 2005-06-16 | Samsung Electronics Co., Ltd., Suwon | Vorrichtung und Verfahren zum Trocknen von Halbleitersubstraten |
JP4421967B2 (ja) * | 2004-07-29 | 2010-02-24 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
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