JP5063180B2 - 薄膜トランジスタ基板、それを含む液晶表示パネル、及びその液晶表示パネルの製造方法 - Google Patents

薄膜トランジスタ基板、それを含む液晶表示パネル、及びその液晶表示パネルの製造方法 Download PDF

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Publication number
JP5063180B2
JP5063180B2 JP2007126799A JP2007126799A JP5063180B2 JP 5063180 B2 JP5063180 B2 JP 5063180B2 JP 2007126799 A JP2007126799 A JP 2007126799A JP 2007126799 A JP2007126799 A JP 2007126799A JP 5063180 B2 JP5063180 B2 JP 5063180B2
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Japan
Prior art keywords
liquid crystal
film transistor
electrode
thin film
storage
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JP2007126799A
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Japanese (ja)
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JP2007304599A (ja
JP2007304599A5 (enExample
Inventor
承 珪 李
源 祥 朴
宰 賢 金
容 ▲ソク▼ 趙
庸 碩 呂
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
JP2007126799A 2006-05-11 2007-05-11 薄膜トランジスタ基板、それを含む液晶表示パネル、及びその液晶表示パネルの製造方法 Expired - Fee Related JP5063180B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060042595A KR20070109521A (ko) 2006-05-11 2006-05-11 박막트랜지스터 기판, 그를 포함하는 액정 표시 패널, 및그 액정 표시 패널의 제조 방법
KR10-2006-0042595 2006-05-11

Publications (3)

Publication Number Publication Date
JP2007304599A JP2007304599A (ja) 2007-11-22
JP2007304599A5 JP2007304599A5 (enExample) 2010-06-24
JP5063180B2 true JP5063180B2 (ja) 2012-10-31

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JP2007126799A Expired - Fee Related JP5063180B2 (ja) 2006-05-11 2007-05-11 薄膜トランジスタ基板、それを含む液晶表示パネル、及びその液晶表示パネルの製造方法

Country Status (4)

Country Link
US (1) US8035108B2 (enExample)
JP (1) JP5063180B2 (enExample)
KR (1) KR20070109521A (enExample)
CN (1) CN101071243A (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100846958B1 (ko) * 2007-05-11 2008-07-17 삼성에스디아이 주식회사 액정 표시 장치 및 그 제조 방법
US7956411B2 (en) * 2008-01-15 2011-06-07 Fairchild Semiconductor Corporation High aspect ratio trench structures with void-free fill material
TWI381230B (zh) * 2008-01-31 2013-01-01 Hannstar Display Corp 液晶顯示器之畫素結構
JP5384480B2 (ja) * 2008-04-22 2014-01-08 シャープ株式会社 液晶表示装置
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
KR101609727B1 (ko) * 2008-12-17 2016-04-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
KR101600887B1 (ko) * 2009-07-06 2016-03-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP5477140B2 (ja) * 2010-04-19 2014-04-23 カシオ計算機株式会社 液晶表示装置
US8976094B2 (en) 2011-05-05 2015-03-10 Apple Inc. Display edge seal improvement
KR102072798B1 (ko) * 2013-06-11 2020-02-04 삼성디스플레이 주식회사 보조 전극을 포함하는 유기 발광 소자
CN105988251A (zh) * 2015-03-05 2016-10-05 群创光电股份有限公司 显示面板及显示装置
KR102576999B1 (ko) * 2016-07-05 2023-09-12 삼성디스플레이 주식회사 액정표시장치
KR101908383B1 (ko) 2018-04-25 2018-12-11 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100339332B1 (ko) * 1999-02-08 2002-06-03 구본준, 론 위라하디락사 멀티도메인 액정표시소자
KR100587217B1 (ko) * 2000-12-29 2006-06-08 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치용 어레이기판 및 그제조방법
JP3895952B2 (ja) * 2001-08-06 2007-03-22 日本電気株式会社 半透過型液晶表示装置及びその製造方法
KR100801153B1 (ko) * 2001-12-31 2008-02-05 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
JP4196611B2 (ja) * 2002-08-09 2008-12-17 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100439649B1 (ko) 2002-08-14 2004-07-12 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치 및 그의 제조방법
TW563258B (en) * 2002-10-01 2003-11-21 Au Optronics Corp Pixel structure and fabricating method thereof
KR101041088B1 (ko) * 2003-06-10 2011-06-13 삼성전자주식회사 반사-투과형 어레이 기판과, 이의 제조 방법 및 이를 갖는액정 표시 장치
JP4614726B2 (ja) 2003-11-25 2011-01-19 シャープ株式会社 液晶表示装置
JP4873882B2 (ja) * 2004-05-21 2012-02-08 三洋電機株式会社 液晶表示装置
US7379135B2 (en) 2004-05-28 2008-05-27 Fujitsu Limited Transflective liquid crystal display
KR100647774B1 (ko) * 2004-11-04 2006-11-23 엘지.필립스 엘시디 주식회사 폴리 실리콘형 박막 트랜지스터 기판 및 제조 방법

Also Published As

Publication number Publication date
JP2007304599A (ja) 2007-11-22
CN101071243A (zh) 2007-11-14
US8035108B2 (en) 2011-10-11
US20070262315A1 (en) 2007-11-15
KR20070109521A (ko) 2007-11-15

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