CN101071243A - 薄膜晶体管基板、液晶显示面板及其制造方法 - Google Patents

薄膜晶体管基板、液晶显示面板及其制造方法 Download PDF

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Publication number
CN101071243A
CN101071243A CNA2007100966036A CN200710096603A CN101071243A CN 101071243 A CN101071243 A CN 101071243A CN A2007100966036 A CNA2007100966036 A CN A2007100966036A CN 200710096603 A CN200710096603 A CN 200710096603A CN 101071243 A CN101071243 A CN 101071243A
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CN
China
Prior art keywords
electrode
storage
line
film transistor
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100966036A
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English (en)
Chinese (zh)
Inventor
李承珪
朴源祥
金宰贤
赵容奭
吕庸硕
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of CN101071243A publication Critical patent/CN101071243A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136213—Storage capacitors associated with the pixel electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
CNA2007100966036A 2006-05-11 2007-04-16 薄膜晶体管基板、液晶显示面板及其制造方法 Pending CN101071243A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060042595A KR20070109521A (ko) 2006-05-11 2006-05-11 박막트랜지스터 기판, 그를 포함하는 액정 표시 패널, 및그 액정 표시 패널의 제조 방법
KR1020060042595 2006-05-11

Publications (1)

Publication Number Publication Date
CN101071243A true CN101071243A (zh) 2007-11-14

Family

ID=38684286

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007100966036A Pending CN101071243A (zh) 2006-05-11 2007-04-16 薄膜晶体管基板、液晶显示面板及其制造方法

Country Status (4)

Country Link
US (1) US8035108B2 (enExample)
JP (1) JP5063180B2 (enExample)
KR (1) KR20070109521A (enExample)
CN (1) CN101071243A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988251A (zh) * 2015-03-05 2016-10-05 群创光电股份有限公司 显示面板及显示装置
CN107577097A (zh) * 2016-07-05 2018-01-12 三星显示有限公司 液晶显示器

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100846958B1 (ko) * 2007-05-11 2008-07-17 삼성에스디아이 주식회사 액정 표시 장치 및 그 제조 방법
US7956411B2 (en) * 2008-01-15 2011-06-07 Fairchild Semiconductor Corporation High aspect ratio trench structures with void-free fill material
TWI381230B (zh) * 2008-01-31 2013-01-01 Hannstar Display Corp 液晶顯示器之畫素結構
WO2009130819A1 (ja) * 2008-04-22 2009-10-29 シャープ株式会社 液晶表示装置
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
KR101609727B1 (ko) * 2008-12-17 2016-04-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
KR101600887B1 (ko) * 2009-07-06 2016-03-09 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP5477140B2 (ja) * 2010-04-19 2014-04-23 カシオ計算機株式会社 液晶表示装置
US8976094B2 (en) 2011-05-05 2015-03-10 Apple Inc. Display edge seal improvement
KR102072798B1 (ko) * 2013-06-11 2020-02-04 삼성디스플레이 주식회사 보조 전극을 포함하는 유기 발광 소자
KR101908383B1 (ko) 2018-04-25 2018-12-11 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법

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KR100339332B1 (ko) * 1999-02-08 2002-06-03 구본준, 론 위라하디락사 멀티도메인 액정표시소자
KR100587217B1 (ko) * 2000-12-29 2006-06-08 엘지.필립스 엘시디 주식회사 횡전계 방식의 액정표시장치용 어레이기판 및 그제조방법
JP3895952B2 (ja) * 2001-08-06 2007-03-22 日本電気株式会社 半透過型液晶表示装置及びその製造方法
KR100801153B1 (ko) * 2001-12-31 2008-02-05 엘지.필립스 엘시디 주식회사 횡전계방식 액정표시장치용 어레이기판과 그 제조방법
JP4196611B2 (ja) * 2002-08-09 2008-12-17 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100439649B1 (ko) 2002-08-14 2004-07-12 엘지.필립스 엘시디 주식회사 반사투과형 액정표시장치 및 그의 제조방법
TW563258B (en) * 2002-10-01 2003-11-21 Au Optronics Corp Pixel structure and fabricating method thereof
KR101041088B1 (ko) * 2003-06-10 2011-06-13 삼성전자주식회사 반사-투과형 어레이 기판과, 이의 제조 방법 및 이를 갖는액정 표시 장치
JP4614726B2 (ja) 2003-11-25 2011-01-19 シャープ株式会社 液晶表示装置
JP4873882B2 (ja) * 2004-05-21 2012-02-08 三洋電機株式会社 液晶表示装置
US7379135B2 (en) 2004-05-28 2008-05-27 Fujitsu Limited Transflective liquid crystal display
KR100647774B1 (ko) * 2004-11-04 2006-11-23 엘지.필립스 엘시디 주식회사 폴리 실리콘형 박막 트랜지스터 기판 및 제조 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105988251A (zh) * 2015-03-05 2016-10-05 群创光电股份有限公司 显示面板及显示装置
CN107577097A (zh) * 2016-07-05 2018-01-12 三星显示有限公司 液晶显示器

Also Published As

Publication number Publication date
JP2007304599A (ja) 2007-11-22
US20070262315A1 (en) 2007-11-15
KR20070109521A (ko) 2007-11-15
JP5063180B2 (ja) 2012-10-31
US8035108B2 (en) 2011-10-11

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Open date: 20071114