JP5059897B2 - 圧電振動片の製造方法 - Google Patents

圧電振動片の製造方法 Download PDF

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Publication number
JP5059897B2
JP5059897B2 JP2010069446A JP2010069446A JP5059897B2 JP 5059897 B2 JP5059897 B2 JP 5059897B2 JP 2010069446 A JP2010069446 A JP 2010069446A JP 2010069446 A JP2010069446 A JP 2010069446A JP 5059897 B2 JP5059897 B2 JP 5059897B2
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JP
Japan
Prior art keywords
metal film
piezoelectric
vibrating piece
forming
mesa
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010069446A
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English (en)
Japanese (ja)
Other versions
JP2011199817A5 (https=
JP2011199817A (ja
Inventor
啓之 佐々木
憲治 島尾
学 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Dempa Kogyo Co Ltd
Original Assignee
Nihon Dempa Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Dempa Kogyo Co Ltd filed Critical Nihon Dempa Kogyo Co Ltd
Priority to JP2010069446A priority Critical patent/JP5059897B2/ja
Priority to US13/030,394 priority patent/US8580126B2/en
Publication of JP2011199817A publication Critical patent/JP2011199817A/ja
Publication of JP2011199817A5 publication Critical patent/JP2011199817A5/ja
Application granted granted Critical
Publication of JP5059897B2 publication Critical patent/JP5059897B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1014Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
    • H03H9/1021Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders or supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/1035Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by two sealing substrates sandwiching the piezoelectric layer of the BAW device
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02Details
    • H03H9/125Driving means, e.g. electrodes, coils
    • H03H9/13Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
    • H03H9/131Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/177Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator of the energy-trap type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/08Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/022Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the cantilever type
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/42Piezoelectric device making

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
JP2010069446A 2010-02-24 2010-03-25 圧電振動片の製造方法 Expired - Fee Related JP5059897B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2010069446A JP5059897B2 (ja) 2010-02-24 2010-03-25 圧電振動片の製造方法
US13/030,394 US8580126B2 (en) 2010-02-24 2011-02-18 Piezoelectric vibrating pieces comprising edge mesa steps, and methods for manufacturing same

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010038193 2010-02-24
JP2010038193 2010-02-24
JP2010069446A JP5059897B2 (ja) 2010-02-24 2010-03-25 圧電振動片の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012130329A Division JP5364185B2 (ja) 2010-02-24 2012-06-08 圧電振動片の製造方法

Publications (3)

Publication Number Publication Date
JP2011199817A JP2011199817A (ja) 2011-10-06
JP2011199817A5 JP2011199817A5 (https=) 2012-02-16
JP5059897B2 true JP5059897B2 (ja) 2012-10-31

Family

ID=44475246

Family Applications (1)

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JP2010069446A Expired - Fee Related JP5059897B2 (ja) 2010-02-24 2010-03-25 圧電振動片の製造方法

Country Status (2)

Country Link
US (1) US8580126B2 (https=)
JP (1) JP5059897B2 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5589167B2 (ja) * 2010-11-19 2014-09-17 セイコーエプソン株式会社 圧電振動片および圧電振動子
CN202535316U (zh) 2011-03-09 2012-11-14 精工爱普生株式会社 振动元件、振子、振荡器以及电子设备
JP5708089B2 (ja) 2011-03-18 2015-04-30 セイコーエプソン株式会社 圧電振動素子、圧電振動子、圧電発振器及び電子デバイス
JP2013062578A (ja) * 2011-09-12 2013-04-04 Nippon Dempa Kogyo Co Ltd 水晶振動片及び水晶デバイス
JP5987321B2 (ja) * 2012-01-16 2016-09-07 セイコーエプソン株式会社 圧電振動片、圧電振動片の製造方法、圧電デバイス及び電子機器
JP5930526B2 (ja) * 2012-02-20 2016-06-08 日本電波工業株式会社 圧電振動素子及び圧電デバイス
JP5982898B2 (ja) * 2012-03-14 2016-08-31 セイコーエプソン株式会社 振動素子、振動子、電子デバイス、発振器、及び電子機器
JP5943187B2 (ja) * 2012-03-21 2016-06-29 セイコーエプソン株式会社 振動素子、振動子、電子デバイス、および電子機器
JP6175743B2 (ja) 2012-06-06 2017-08-09 セイコーエプソン株式会社 振動素子の製造方法
CN104380602B (zh) * 2012-07-06 2017-06-09 株式会社大真空 压电振动片及使用该压电振动片的压电振动器件
JP6075082B2 (ja) * 2013-01-24 2017-02-08 株式会社大真空 水晶振動子とその製造方法
JP2014146945A (ja) * 2013-01-29 2014-08-14 Kyocera Crystal Device Corp 圧電素子ウエハ形成方法
JP6162426B2 (ja) * 2013-02-25 2017-07-12 京セラ株式会社 圧電素子ウエハ形成方法
US9660610B2 (en) * 2014-05-30 2017-05-23 Kyocera Crystal Device Corporation Crystal device and mounting arrangement
JP6390836B2 (ja) 2014-07-31 2018-09-19 セイコーエプソン株式会社 振動片、振動子、振動デバイス、発振器、電子機器、および移動体
JP6561447B2 (ja) 2014-10-02 2019-08-21 セイコーエプソン株式会社 振動子、発振器、電子機器、および移動体
JP2016152477A (ja) * 2015-02-17 2016-08-22 セイコーエプソン株式会社 振動子、振動デバイス、発振器、電子機器、および移動体
JP5988125B1 (ja) * 2015-02-19 2016-09-07 株式会社村田製作所 水晶振動子及び水晶振動デバイス
JP6719313B2 (ja) * 2015-08-05 2020-07-08 エスアイアイ・クリスタルテクノロジー株式会社 圧電振動片および圧電振動子
JP2018088656A (ja) * 2016-11-30 2018-06-07 京セラ株式会社 水晶素子および水晶デバイス
JP6998795B2 (ja) * 2018-02-28 2022-01-18 京セラ株式会社 水晶振動素子及び水晶デバイス
CN113055791B (zh) * 2019-12-28 2022-10-28 荣耀终端有限公司 扬声器内核、扬声器模组及电子设备
JP2023065836A (ja) * 2021-10-28 2023-05-15 セイコーエプソン株式会社 振動素子の製造方法
TWI786907B (zh) * 2021-10-28 2022-12-11 國立中央大學 振盪器頻率調變的方法及振盪器壓電結構
JP2023082271A (ja) * 2021-12-02 2023-06-14 セイコーエプソン株式会社 振動素子の製造方法
JP2023085722A (ja) * 2021-12-09 2023-06-21 セイコーエプソン株式会社 振動素子の製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738757A (en) * 1995-11-22 1998-04-14 Northrop Grumman Corporation Planar masking for multi-depth silicon etching
JP3702723B2 (ja) * 1999-09-01 2005-10-05 セイコーエプソン株式会社 圧電振動片の製造方法
JP2002018698A (ja) 2000-07-07 2002-01-22 Nippon Dempa Kogyo Co Ltd 水晶振動子の研磨方法
US6939475B2 (en) 2001-08-31 2005-09-06 Daishinku Corporation Etching method, etched product formed by the same, and piezoelectric vibration device, method for producing the same
JP3888107B2 (ja) * 2001-08-31 2007-02-28 株式会社大真空 圧電振動デバイス用圧電振動板のエッチング方法
JP3844213B2 (ja) * 2002-03-14 2006-11-08 セイコーエプソン株式会社 圧電振動片の製造方法、フォトマスク、圧電振動片および圧電デバイス

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Publication number Publication date
JP2011199817A (ja) 2011-10-06
US8580126B2 (en) 2013-11-12
US20110203083A1 (en) 2011-08-25

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