JP5042452B2 - 高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ - Google Patents

高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ Download PDF

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JP5042452B2
JP5042452B2 JP2004350530A JP2004350530A JP5042452B2 JP 5042452 B2 JP5042452 B2 JP 5042452B2 JP 2004350530 A JP2004350530 A JP 2004350530A JP 2004350530 A JP2004350530 A JP 2004350530A JP 5042452 B2 JP5042452 B2 JP 5042452B2
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substrate
organic molecules
densified layer
organic
molecules
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JP2005167256A (ja
JP2005167256A5 (enExample
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バオ ゼナン
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アルカテル−ルーセント ユーエスエー インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H10K10/478—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/1307—Organic Field-Effect Transistor [OFET]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2004350530A 2003-12-04 2004-12-03 高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ Expired - Fee Related JP5042452B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/727,709 US7767998B2 (en) 2003-12-04 2003-12-04 OFETs with active channels formed of densified layers
US10/727709 2003-12-04

Publications (3)

Publication Number Publication Date
JP2005167256A JP2005167256A (ja) 2005-06-23
JP2005167256A5 JP2005167256A5 (enExample) 2008-01-24
JP5042452B2 true JP5042452B2 (ja) 2012-10-03

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JP2004350530A Expired - Fee Related JP5042452B2 (ja) 2003-12-04 2004-12-03 高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ

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Country Link
US (2) US7767998B2 (enExample)
EP (1) EP1538685A1 (enExample)
JP (1) JP5042452B2 (enExample)
KR (1) KR101110086B1 (enExample)

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US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
ATE470957T1 (de) * 2006-03-24 2010-06-15 Merck Patent Gmbh Organische halbleiterformulierung
KR100845004B1 (ko) * 2007-04-30 2008-07-09 삼성전자주식회사 나노 갭을 갖는 금속막 패턴의 형성 방법 및 이를 이용한분자크기의 소자 제조 방법
US8043978B2 (en) * 2007-10-11 2011-10-25 Riken Electronic device and method for producing electronic device
KR100906144B1 (ko) * 2007-12-05 2009-07-07 한국전자통신연구원 검출 소자 및 검출 소자의 제조 방법
US11786036B2 (en) 2008-06-27 2023-10-17 Ssw Advanced Technologies, Llc Spill containing refrigerator shelf assembly
US8286561B2 (en) 2008-06-27 2012-10-16 Ssw Holding Company, Inc. Spill containing refrigerator shelf assembly
EP2346678B1 (en) 2008-10-07 2017-10-04 Ross Technology Corporation Spill resistant surfaces having hydrophobic and oleophobic borders
WO2011056742A1 (en) 2009-11-04 2011-05-12 Ssw Holding Company, Inc. Cooking appliance surfaces having spill containment pattern and methods of making the same
JP5858441B2 (ja) 2010-03-15 2016-02-10 ロス テクノロジー コーポレーション．Ｒｏｓｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏｒｐｏｒａｔｉｏｎ プランジャーおよび疎水性表面を得るための方法
US20120112830A1 (en) * 2010-11-04 2012-05-10 Ludwig Lester F Towards the very smallest electronic circuits and systems: transduction, signal processing, and digital logic in molecular fused-rings via mesh ring-currents
AU2012220798B2 (en) 2011-02-21 2016-04-28 Ross Technology Corporation Superhydrophobic and oleophobic coatings with low VOC binder systems
DE102011085428A1 (de) 2011-10-28 2013-05-02 Schott Ag Einlegeboden
WO2013090939A1 (en) 2011-12-15 2013-06-20 Ross Technology Corporation Composition and coating for superhydrophobic performance
KR20150013633A (ko) * 2012-05-02 2015-02-05 바스프 에스이 유기 물질의 증착 방법
CN104520392A (zh) 2012-06-25 2015-04-15 罗斯科技公司 具有疏水和/或疏油性质的弹性体涂层
US20150155494A1 (en) * 2012-07-13 2015-06-04 Merck Patent Gmbh Organic electronic device comprising an organic semiconductors formulation
KR101980198B1 (ko) * 2012-11-12 2019-05-21 삼성전자주식회사 신축성 트랜지스터용 채널층
KR102089347B1 (ko) * 2013-10-08 2020-03-16 경북대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

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Also Published As

Publication number Publication date
KR101110086B1 (ko) 2012-02-24
EP1538685A1 (en) 2005-06-08
KR20050054441A (ko) 2005-06-10
US7767998B2 (en) 2010-08-03
US7338835B2 (en) 2008-03-04
US20050242345A1 (en) 2005-11-03
US20050121728A1 (en) 2005-06-09
JP2005167256A (ja) 2005-06-23

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