JP2005167256A5 - - Google Patents

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Publication number
JP2005167256A5
JP2005167256A5 JP2004350530A JP2004350530A JP2005167256A5 JP 2005167256 A5 JP2005167256 A5 JP 2005167256A5 JP 2004350530 A JP2004350530 A JP 2004350530A JP 2004350530 A JP2004350530 A JP 2004350530A JP 2005167256 A5 JP2005167256 A5 JP 2005167256A5
Authority
JP
Japan
Prior art keywords
substrate
field effect
effect transistor
organic
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004350530A
Other languages
English (en)
Japanese (ja)
Other versions
JP5042452B2 (ja
JP2005167256A (ja
Filing date
Publication date
Priority claimed from US10/727,709 external-priority patent/US7767998B2/en
Application filed filed Critical
Publication of JP2005167256A publication Critical patent/JP2005167256A/ja
Publication of JP2005167256A5 publication Critical patent/JP2005167256A5/ja
Application granted granted Critical
Publication of JP5042452B2 publication Critical patent/JP5042452B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004350530A 2003-12-04 2004-12-03 高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ Expired - Fee Related JP5042452B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/727,709 US7767998B2 (en) 2003-12-04 2003-12-04 OFETs with active channels formed of densified layers
US10/727709 2003-12-04

Publications (3)

Publication Number Publication Date
JP2005167256A JP2005167256A (ja) 2005-06-23
JP2005167256A5 true JP2005167256A5 (enExample) 2008-01-24
JP5042452B2 JP5042452B2 (ja) 2012-10-03

Family

ID=34465771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004350530A Expired - Fee Related JP5042452B2 (ja) 2003-12-04 2004-12-03 高密度化層で形成された能動チャネルを有する有機電界効果トランジスタ

Country Status (4)

Country Link
US (2) US7767998B2 (enExample)
EP (1) EP1538685A1 (enExample)
JP (1) JP5042452B2 (enExample)
KR (1) KR101110086B1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050211973A1 (en) * 2004-03-23 2005-09-29 Kiyotaka Mori Stressed organic semiconductor
KR100766318B1 (ko) * 2005-11-29 2007-10-11 엘지.필립스 엘시디 주식회사 유기 반도체 물질을 이용한 박막트랜지스터와 이를 구비한액정표시장치용 어레이 기판 및 그 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
ATE470957T1 (de) * 2006-03-24 2010-06-15 Merck Patent Gmbh Organische halbleiterformulierung
KR100845004B1 (ko) * 2007-04-30 2008-07-09 삼성전자주식회사 나노 갭을 갖는 금속막 패턴의 형성 방법 및 이를 이용한분자크기의 소자 제조 방법
US8043978B2 (en) * 2007-10-11 2011-10-25 Riken Electronic device and method for producing electronic device
KR100906144B1 (ko) * 2007-12-05 2009-07-07 한국전자통신연구원 검출 소자 및 검출 소자의 제조 방법
US11786036B2 (en) 2008-06-27 2023-10-17 Ssw Advanced Technologies, Llc Spill containing refrigerator shelf assembly
US8286561B2 (en) 2008-06-27 2012-10-16 Ssw Holding Company, Inc. Spill containing refrigerator shelf assembly
EP2346678B1 (en) 2008-10-07 2017-10-04 Ross Technology Corporation Spill resistant surfaces having hydrophobic and oleophobic borders
WO2011056742A1 (en) 2009-11-04 2011-05-12 Ssw Holding Company, Inc. Cooking appliance surfaces having spill containment pattern and methods of making the same
JP5858441B2 (ja) 2010-03-15 2016-02-10 ロス テクノロジー コーポレーション．Ｒｏｓｓ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏｒｐｏｒａｔｉｏｎ プランジャーおよび疎水性表面を得るための方法
US20120112830A1 (en) * 2010-11-04 2012-05-10 Ludwig Lester F Towards the very smallest electronic circuits and systems: transduction, signal processing, and digital logic in molecular fused-rings via mesh ring-currents
AU2012220798B2 (en) 2011-02-21 2016-04-28 Ross Technology Corporation Superhydrophobic and oleophobic coatings with low VOC binder systems
DE102011085428A1 (de) 2011-10-28 2013-05-02 Schott Ag Einlegeboden
WO2013090939A1 (en) 2011-12-15 2013-06-20 Ross Technology Corporation Composition and coating for superhydrophobic performance
KR20150013633A (ko) * 2012-05-02 2015-02-05 바스프 에스이 유기 물질의 증착 방법
CN104520392A (zh) 2012-06-25 2015-04-15 罗斯科技公司 具有疏水和/或疏油性质的弹性体涂层
US20150155494A1 (en) * 2012-07-13 2015-06-04 Merck Patent Gmbh Organic electronic device comprising an organic semiconductors formulation
KR101980198B1 (ko) * 2012-11-12 2019-05-21 삼성전자주식회사 신축성 트랜지스터용 채널층
KR102089347B1 (ko) * 2013-10-08 2020-03-16 경북대학교 산학협력단 비휘발성 메모리 소자 및 이의 제조 방법
US20220045274A1 (en) * 2020-08-06 2022-02-10 Facebook Technologies Llc Ofets having organic semiconductor layer with high carrier mobility and in situ isolation

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US5206525A (en) 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
WO1999019900A2 (en) * 1997-10-14 1999-04-22 Patterning Technologies Limited Method of forming an electronic device
EP1243034A1 (en) 1999-12-21 2002-09-25 Plastic Logic Limited Solution processed devices
TW555790B (en) 2000-12-26 2003-10-01 Matsushita Electric Industrial Co Ltd Conductive organic thin film, process for producing the same, and organic photoelectronic device, electric wire, and electrode aech employing the same
US6946676B2 (en) 2001-11-05 2005-09-20 3M Innovative Properties Company Organic thin film transistor with polymeric interface
US6555411B1 (en) 2001-12-18 2003-04-29 Lucent Technologies Inc. Thin film transistors
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WO2003067667A1 (en) * 2002-02-08 2003-08-14 Dai Nippon Printing Co., Ltd. Organic semiconductor structure, process for producing the same, and organic semiconductor device
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US6770549B2 (en) 2002-05-08 2004-08-03 Lucent Technologies Inc. Forming patterned thin film metal layers
US6661024B1 (en) 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
US7132680B2 (en) 2003-06-09 2006-11-07 International Business Machines Corporation Organic field-effect transistor and method of making same based on polymerizable self-assembled monolayers

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