JP5042053B2 - 有機金属気相成長炉 - Google Patents
有機金属気相成長炉 Download PDFInfo
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- JP5042053B2 JP5042053B2 JP2008018551A JP2008018551A JP5042053B2 JP 5042053 B2 JP5042053 B2 JP 5042053B2 JP 2008018551 A JP2008018551 A JP 2008018551A JP 2008018551 A JP2008018551 A JP 2008018551A JP 5042053 B2 JP5042053 B2 JP 5042053B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 19
- 239000002184 metal Substances 0.000 title claims description 19
- 238000007740 vapor deposition Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims description 45
- 239000004065 semiconductor Substances 0.000 claims description 41
- 239000002994 raw material Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 150000001875 compounds Chemical class 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 20
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 239000012159 carrier gas Substances 0.000 claims description 16
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 15
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 15
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 15
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 11
- 238000001947 vapour-phase growth Methods 0.000 claims description 10
- 229910021529 ammonia Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 4
- 238000011144 upstream manufacturing Methods 0.000 claims description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 18
- 239000010410 layer Substances 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 239000011575 calcium Substances 0.000 description 11
- 239000011777 magnesium Substances 0.000 description 11
- 229910000039 hydrogen halide Inorganic materials 0.000 description 8
- 239000012433 hydrogen halide Substances 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 229910052791 calcium Inorganic materials 0.000 description 6
- 238000000927 vapour-phase epitaxy Methods 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000002346 layers by function Substances 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000005525 hole transport Effects 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- RHUYHJGZWVXEHW-UHFFFAOYSA-N 1,1-Dimethyhydrazine Chemical compound CN(C)N RHUYHJGZWVXEHW-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- -1 indium halide Chemical class 0.000 description 2
- 238000007086 side reaction Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- DIIIISSCIXVANO-UHFFFAOYSA-N 1,2-Dimethylhydrazine Chemical compound CNNC DIIIISSCIXVANO-UHFFFAOYSA-N 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- MLKKSFBXZUQIKU-UHFFFAOYSA-N CC1(C=CC=C1)[Ca]C1(C=CC=C1)C Chemical compound CC1(C=CC=C1)[Ca]C1(C=CC=C1)C MLKKSFBXZUQIKU-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- XGXMTFOZBRCVIF-UHFFFAOYSA-N FC(C(F)=C1F)(C(F)=C1F)[Ca] Chemical compound FC(C(F)=C1F)(C(F)=C1F)[Ca] XGXMTFOZBRCVIF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- LZNROSKSIPUXML-UHFFFAOYSA-N [Ca](c1cccc2ccccc12)c1cccc2ccccc12 Chemical compound [Ca](c1cccc2ccccc12)c1cccc2ccccc12 LZNROSKSIPUXML-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- UIXRSLJINYRGFQ-UHFFFAOYSA-N calcium carbide Chemical compound [Ca+2].[C-]#[C-] UIXRSLJINYRGFQ-UHFFFAOYSA-N 0.000 description 1
- PNZJBDPBPVHSKL-UHFFFAOYSA-M chloro(diethyl)indigane Chemical compound [Cl-].CC[In+]CC PNZJBDPBPVHSKL-UHFFFAOYSA-M 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910000078 germane Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- HDZGCSFEDULWCS-UHFFFAOYSA-N monomethylhydrazine Chemical compound CNN HDZGCSFEDULWCS-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 1
- ZRLCXMPFXYVHGS-UHFFFAOYSA-N tetramethylgermane Chemical compound C[Ge](C)(C)C ZRLCXMPFXYVHGS-UHFFFAOYSA-N 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45585—Compression of gas before it reaches the substrate
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
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- C30B29/38—Nitrides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
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- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Description
この方法で、3族原料と5族原料とを独立に炉内に供給する。
また、ハロゲン化水素を5族原料以外の原料、又はキャリアガスと共に炉内に供給する。
基板として直径50mmのC面サファイア基板を用い、該サファイア基板上に、GaNバッファを用いた2段階成長によりGaN層を3μmエピタキシャル成長させる。キャリアガスは水素ガス(H2 )、3族原料はトリメチルガリウム(TMG)、5族原料はアンモニアである。成長温度は1150℃、有機金属原料であるTMGの供給量は0.233mmol/分である。更にTMGの供給量を2.14mmol/分として30分成長し、HClガス(HCl20%/水素80%の希釈ガス)の供給量を0〜400sccmとした場合の結果を図2に示す。HClガスの供給は、Moラインからの供給と、Mgラインからの供給との両方について実施し、図2に、Moラインからの供給の場合と、Mgラインからの供給の場合との結果をまとめて示してある。
2 反応装置(気相成長炉)
3 原料ガス供給装置
21 本体
21A 一端部
22 サセプタ
31 第1供給路
32 第2供給路
33 第3供給路
34 第4供給路
31A〜34A 吐出口
S 基板
Claims (2)
- 3−5族系化合物半導体の製造方法に用いるための有機金属気相成長炉において、
キャリアガスを炉内に供給する吐出口は少なくとも所要の3族原料ガスと5族原料ガスを含む各原料ガスを炉内に供給する各吐出口よりも上方に位置し、かつ、前記キャリアガス及び前記各原料ガスは互いに分離した状態で前記有機金属気相成長炉内に供給され、
前記有機金属気相成長炉は、それぞれの前記吐出口が設けられる一端部から基板のセットされている部分に向けて縮径され、
前記有機金属気相成長炉がコールドウォールであり、前記基板の上流側に前記所要の原料ガスの冷却のための水冷装置が設けられ、
前記製造方法は、気相成長炉内の前記基板上に3−5族系化合物半導体を有機金属気相成長法によって気相成長させるようにした3−5族系化合物半導体の製造方法であって、
塩化水素を前記所要の原料ガスに含まれる5族元素のガス以外の原料ガス或いは前記キャリアガスと共に前記有機金属気相成長炉内に供給し、
前記5族原料ガスがアンモニアである有機金属気相成長炉。 - 前記有機金属気相成長炉の上方の壁が、前記一端部から前記基板のセットされている部分に向けて、下方に傾斜する請求項1に記載の有機金属気相成長炉。
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JP2008018551A JP5042053B2 (ja) | 2007-01-31 | 2008-01-30 | 有機金属気相成長炉 |
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JP (1) | JP5042053B2 (ja) |
KR (1) | KR20090104090A (ja) |
CN (1) | CN101595250A (ja) |
DE (1) | DE112008000279T5 (ja) |
GB (1) | GB2460355A (ja) |
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WO2011093481A1 (ja) * | 2010-02-01 | 2011-08-04 | Jx日鉱日石金属株式会社 | 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板 |
AU2011296357B2 (en) | 2010-08-31 | 2017-01-05 | The Lubrizol Corporation | Preparation of phosphorus - containing antiwear compounds for use in lubricant compositions |
JP2013115313A (ja) * | 2011-11-30 | 2013-06-10 | Stanley Electric Co Ltd | 結晶成長装置 |
TWI565825B (zh) * | 2012-06-07 | 2017-01-11 | 索泰克公司 | 沉積系統之氣體注入組件及相關使用方法 |
WO2015145907A1 (ja) * | 2014-03-27 | 2015-10-01 | 宇部興産株式会社 | 有機金属化合物含有ガスの供給装置 |
CN109423696B (zh) * | 2017-08-24 | 2021-07-23 | 北京大学深圳研究生院 | 一种多层有机单晶结构的生长装置 |
CN110047973B (zh) * | 2019-04-23 | 2020-05-01 | 范佳旭 | 一种基于铜掺杂硫化镉纳米线的光电传感器及其制备方法 |
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JPH01175727A (ja) * | 1987-12-29 | 1989-07-12 | Nec Corp | 3−v族化合物半導体の選択埋め込み成長方法 |
US5294632A (en) * | 1991-05-01 | 1994-03-15 | Ciba-Geigy Corporation | Phosphono/biaryl substituted dipetide derivatives |
US5843590A (en) * | 1994-12-26 | 1998-12-01 | Sumitomo Electric Industries, Ltd. | Epitaxial wafer and method of preparing the same |
JPH08293473A (ja) * | 1995-04-25 | 1996-11-05 | Sumitomo Electric Ind Ltd | エピタキシャルウェハおよび化合物半導体発光素子ならびにそれらの製造方法 |
JP3879173B2 (ja) * | 1996-03-25 | 2007-02-07 | 住友電気工業株式会社 | 化合物半導体気相成長方法 |
JP3142054B2 (ja) * | 1996-12-03 | 2001-03-07 | 日本碍子株式会社 | 化学気相堆積装置 |
JPH10167884A (ja) * | 1996-12-03 | 1998-06-23 | Nissin Electric Co Ltd | 化学気相堆積装置 |
JPH111395A (ja) * | 1997-06-09 | 1999-01-06 | Sumitomo Electric Ind Ltd | GaN系化合物半導体のエピタキシャル成長方法 |
JP3788037B2 (ja) | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
JP3788041B2 (ja) | 1998-06-30 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
JP3607664B2 (ja) * | 2000-12-12 | 2005-01-05 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置 |
JP2002261030A (ja) * | 2001-03-02 | 2002-09-13 | Sumitomo Chem Co Ltd | 3−5族化合物半導体エピタキシャル成長方法及び装置 |
JP3631724B2 (ja) | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP5194334B2 (ja) | 2004-05-18 | 2013-05-08 | 住友電気工業株式会社 | Iii族窒化物半導体デバイスの製造方法 |
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- 2008-01-24 DE DE112008000279T patent/DE112008000279T5/de not_active Withdrawn
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DE112008000279T5 (de) | 2010-04-01 |
CN101595250A (zh) | 2009-12-02 |
TW200833886A (en) | 2008-08-16 |
US20090320746A1 (en) | 2009-12-31 |
KR20090104090A (ko) | 2009-10-05 |
GB0915133D0 (en) | 2009-10-07 |
JP2008211198A (ja) | 2008-09-11 |
WO2008093759A1 (ja) | 2008-08-07 |
GB2460355A (en) | 2009-12-02 |
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