JP5032030B2 - マイクロマシニング型の構成素子の製造方法 - Google Patents

マイクロマシニング型の構成素子の製造方法 Download PDF

Info

Publication number
JP5032030B2
JP5032030B2 JP2006026589A JP2006026589A JP5032030B2 JP 5032030 B2 JP5032030 B2 JP 5032030B2 JP 2006026589 A JP2006026589 A JP 2006026589A JP 2006026589 A JP2006026589 A JP 2006026589A JP 5032030 B2 JP5032030 B2 JP 5032030B2
Authority
JP
Japan
Prior art keywords
diaphragm
layer
etching
sacrificial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006026589A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006212773A5 (enExample
JP2006212773A (ja
Inventor
レルマー フランツ
クローンミュラー ジルヴィア
ライネンバッハ クリスティーナ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Publication of JP2006212773A publication Critical patent/JP2006212773A/ja
Publication of JP2006212773A5 publication Critical patent/JP2006212773A5/ja
Application granted granted Critical
Publication of JP5032030B2 publication Critical patent/JP5032030B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0109—Bridges

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
JP2006026589A 2005-02-03 2006-02-03 マイクロマシニング型の構成素子の製造方法 Expired - Fee Related JP5032030B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005004878.1A DE102005004878B4 (de) 2005-02-03 2005-02-03 Mikromechanischer kapazitiver Drucksensor und entsprechendes Herstellungsverfahren
DE102005004878.1 2005-02-03

Publications (3)

Publication Number Publication Date
JP2006212773A JP2006212773A (ja) 2006-08-17
JP2006212773A5 JP2006212773A5 (enExample) 2009-03-19
JP5032030B2 true JP5032030B2 (ja) 2012-09-26

Family

ID=36709616

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006026589A Expired - Fee Related JP5032030B2 (ja) 2005-02-03 2006-02-03 マイクロマシニング型の構成素子の製造方法

Country Status (4)

Country Link
US (1) US7262071B2 (enExample)
JP (1) JP5032030B2 (enExample)
DE (1) DE102005004878B4 (enExample)
FR (1) FR2882996B1 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7880247B2 (en) * 2003-12-29 2011-02-01 Vladimir Vaganov Semiconductor input control device
US9034666B2 (en) 2003-12-29 2015-05-19 Vladimir Vaganov Method of testing of MEMS devices on a wafer level
US7772657B2 (en) * 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US7554167B2 (en) * 2003-12-29 2009-06-30 Vladimir Vaganov Three-dimensional analog input control device
US8350345B2 (en) 2003-12-29 2013-01-08 Vladimir Vaganov Three-dimensional input control device
DE102005047081B4 (de) * 2005-09-30 2019-01-31 Robert Bosch Gmbh Verfahren zum plasmalosen Ätzen von Silizium mit dem Ätzgas ClF3 oder XeF2
KR20090033184A (ko) * 2006-05-22 2009-04-01 블라디미르 바가노프 반도체 입력 제어 장치
WO2007139695A2 (en) * 2006-05-24 2007-12-06 Vladimir Vaganov Force input control device and method of fabrication
DE102006024668A1 (de) * 2006-05-26 2007-11-29 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zu dessen Herstellung
KR20090125087A (ko) * 2007-02-20 2009-12-03 퀄컴 엠이엠스 테크놀로지스, 인크. 마이크로전자기계 시스템〔ｍｅｍｓ〕의 에칭장치 및 에칭 방법
CN101652317B (zh) * 2007-04-04 2012-12-12 高通Mems科技公司 通过牺牲层中的界面修改来消除释放蚀刻侵蚀
DE102007029414A1 (de) 2007-06-26 2009-01-08 Robert Bosch Gmbh Kapazitiver Drucksensor
WO2009036215A2 (en) * 2007-09-14 2009-03-19 Qualcomm Mems Technologies, Inc. Etching processes used in mems production
DE102007046017B4 (de) * 2007-09-26 2021-07-01 Robert Bosch Gmbh Sensorelement
US8258591B2 (en) * 2008-01-16 2012-09-04 Solid State System Co., Ltd. Micro-electro-mechanical systems (MEMS) device
JP5473253B2 (ja) * 2008-06-02 2014-04-16 キヤノン株式会社 複数の導電性領域を有する構造体、及びその製造方法
DE102009000071A1 (de) 2009-01-08 2010-07-15 Robert Bosch Gmbh Kapazitiver Drucksensor
WO2010122953A1 (ja) 2009-04-24 2010-10-28 株式会社村田製作所 Ｍｅｍｓ素子およびその製造方法
DE102010003488A1 (de) * 2010-03-30 2011-10-06 Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik Verkapselung eines BiCMOS kompatiblen RFMEMS Schalters
KR101215919B1 (ko) * 2010-08-13 2012-12-27 전자부품연구원 정전용량형 압력센서 및 그의 제조방법
JP5778914B2 (ja) * 2010-11-04 2015-09-16 キヤノン株式会社 電気機械変換装置の製造方法
CN102539055B (zh) * 2012-02-13 2014-04-09 苏州文智芯微系统技术有限公司 基于智能剥离硅隔离芯片的耐高温抗腐蚀压力传感器
US8748999B2 (en) * 2012-04-20 2014-06-10 Taiwan Semiconductor Manufacturing Company, Ltd. Capacitive sensors and methods for forming the same
FR2999948B1 (fr) 2012-12-20 2016-04-29 Aerogroupe Plateforme mobile dans une structure cylindrique
US8900975B2 (en) * 2013-01-03 2014-12-02 International Business Machines Corporation Nanopore sensor device
US9216897B2 (en) * 2013-06-05 2015-12-22 Invensense, Inc. Capacitive sensing structure with embedded acoustic channels
CN105993064B (zh) * 2013-12-27 2019-12-03 英特尔公司 用于环绕栅极架构的选择性蚀刻
US9630837B1 (en) * 2016-01-15 2017-04-25 Taiwan Semiconductor Manufacturing Company Ltd. MEMS structure and manufacturing method thereof
US10554153B2 (en) * 2016-06-17 2020-02-04 Globalfoundries Singapore Pte. Ltd. MEMS device for harvesting sound energy and methods for fabricating same
JP6812880B2 (ja) * 2017-03-29 2021-01-13 東京エレクトロン株式会社 基板処理方法及び記憶媒体。
JP2020151796A (ja) * 2019-03-19 2020-09-24 株式会社リコー 振動素子基板の製造方法及び振動素子基板
US11791155B2 (en) * 2020-08-27 2023-10-17 Applied Materials, Inc. Diffusion barriers for germanium

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05231970A (ja) * 1992-02-25 1993-09-07 Matsushita Electric Works Ltd 薄膜体ブリッジ構造
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH06347353A (ja) * 1993-06-11 1994-12-22 Fujikura Ltd 半導体圧力センサ
US7460291B2 (en) * 1994-05-05 2008-12-02 Idc, Llc Separable modulator
EP1025711A1 (en) * 1997-10-31 2000-08-09 Daewoo Electronics Co., Ltd Method for manufacturing thin film actuated mirror array in an optical projection system
JP2000022172A (ja) * 1998-06-30 2000-01-21 Matsushita Electric Ind Co Ltd 変換装置及びその製造方法
JP3362714B2 (ja) * 1998-11-16 2003-01-07 株式会社豊田中央研究所 静電容量型圧力センサおよびその製造方法
US6229190B1 (en) * 1998-12-18 2001-05-08 Maxim Integrated Products, Inc. Compensated semiconductor pressure sensor
EP1173893A4 (en) * 1999-01-15 2007-08-01 Univ California POLYSILICIUM-GERMANIUM FILMS FOR PERFORMING MICRO-ELECTROMECHANICAL SYSTEMS
DE10024266B4 (de) * 2000-05-17 2010-06-17 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements
US6355498B1 (en) * 2000-08-11 2002-03-12 Agere Systems Guartian Corp. Thin film resonators fabricated on membranes created by front side releasing
DE10047500B4 (de) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Mikromechanische Membran und Verfahren zu ihrer Herstellung
DE10122765A1 (de) * 2001-05-10 2002-12-05 Campus Micro Technologies Gmbh Elektroakustischer Wandler zur Erzeugung oder Erfassung von Ultraschall, Wandler-Array und Verfahren zur Herstellung der Wandler bzw. der Wandler-Arrays
US6635519B2 (en) * 2002-01-10 2003-10-21 Agere Systems, Inc. Structurally supported thin film resonator and method of fabrication
DE10230252B4 (de) * 2002-07-04 2013-10-17 Robert Bosch Gmbh Verfahren zur Herstellung integrierter Mikrosysteme
DE10239306B4 (de) * 2002-08-27 2006-08-31 Hahn-Schickard-Gesellschaft für angewandte Forschung e.V. Verfahren zum selektiven Verbinden von Substraten

Also Published As

Publication number Publication date
DE102005004878A1 (de) 2006-08-10
US20060170012A1 (en) 2006-08-03
US7262071B2 (en) 2007-08-28
DE102005004878B4 (de) 2015-01-08
FR2882996B1 (fr) 2015-12-25
FR2882996A1 (fr) 2006-09-15
JP2006212773A (ja) 2006-08-17

Similar Documents

Publication Publication Date Title
JP5032030B2 (ja) マイクロマシニング型の構成素子の製造方法
US6445053B1 (en) Micro-machined absolute pressure sensor
US9938133B2 (en) System and method for a comb-drive MEMS device
US7834409B2 (en) Micromechanical component and corresponding method for its manufacture
JP4603740B2 (ja) 精密機械的な構造要素、及びその製造方法
US8794075B2 (en) Multilayered NONON membrane in a MEMS sensor
EP1826174B1 (en) Method for forming thin film structure having small tensile stress
US11533565B2 (en) Dual back-plate and diaphragm microphone
CN1970434A (zh) 在soi硅片上制造压阻式微悬臂梁传感器的方法
CN107850505A (zh) Mems电容式压力传感器以及制造方法
US6521965B1 (en) Integrated pressure sensor
US20180340901A1 (en) Gas sensor platform and the method of making the same
JP5975457B2 (ja) 三次元構造体及びセンサ
JP5129456B2 (ja) 梁部を備えた構造体の製造方法およびｍｅｍｓデバイス
JP4529431B2 (ja) マイクロ構造体の製造方法
JP2015194443A (ja) 差圧検出素子の製造方法
JP6218330B2 (ja) 圧力センサ及びその製造方法
JP5939168B2 (ja) 半導体装置
CN209559360U (zh) 一种温度传感器
Vähänissi Xenon difluoride etching of sacrificial layers for fabrication of microelectromechanical devices
JP5276785B2 (ja) 半導体装置
RU2827958C1 (ru) Мэмс-датчик давления
EP3653567A1 (en) Method for manufacturing an integrated mems transducer device and integrated mems transducer device
Fragiacomo et al. Intrinsic low hysteresis touch mode capacitive pressure sensor
CN119438301A (zh) 包括盖层的热导率传感器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090202

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090202

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110817

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20111117

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20111122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111219

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120530

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120628

R150 Certificate of patent or registration of utility model

Ref document number: 5032030

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150706

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees