JP5026788B2 - マイクロリソグラフィの照明システム - Google Patents
マイクロリソグラフィの照明システム Download PDFInfo
- Publication number
- JP5026788B2 JP5026788B2 JP2006521398A JP2006521398A JP5026788B2 JP 5026788 B2 JP5026788 B2 JP 5026788B2 JP 2006521398 A JP2006521398 A JP 2006521398A JP 2006521398 A JP2006521398 A JP 2006521398A JP 5026788 B2 JP5026788 B2 JP 5026788B2
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- JP
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- Prior art keywords
- field
- illumination
- honeycomb
- light
- pupil
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005286 illumination Methods 0.000 title claims abstract description 197
- 238000001393 microlithography Methods 0.000 title claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 142
- 238000001900 extreme ultraviolet lithography Methods 0.000 claims abstract description 10
- 230000001419 dependent effect Effects 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 6
- 241000264877 Hippospongia communis Species 0.000 description 201
- 210000001747 pupil Anatomy 0.000 description 152
- 238000012937 correction Methods 0.000 description 35
- 238000003384 imaging method Methods 0.000 description 30
- 239000003990 capacitor Substances 0.000 description 24
- 230000005855 radiation Effects 0.000 description 21
- 230000004907 flux Effects 0.000 description 16
- 230000005540 biological transmission Effects 0.000 description 13
- 230000004075 alteration Effects 0.000 description 11
- 238000009826 distribution Methods 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 108700019404 Pro-Gly-Pro- ACTH (4-7) Proteins 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- AFEHBIGDWIGTEH-AQRCPPRCSA-N semax Chemical compound C([C@H](NC(=O)[C@H](CCC(O)=O)NC(=O)[C@@H](N)CCSC)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N1[C@@H](CCC1)C(=O)NCC(=O)N1[C@@H](CCC1)C(O)=O)C1=CNC=N1 AFEHBIGDWIGTEH-AQRCPPRCSA-N 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 241000276498 Pollachius virens Species 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B17/00—Systems with reflecting surfaces, with or without refracting elements
- G02B17/02—Catoptric systems, e.g. image erecting and reversing system
- G02B17/06—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror
- G02B17/0647—Catoptric systems, e.g. image erecting and reversing system using mirrors only, i.e. having only one curved mirror using more than three curved mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70233—Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Microscoopes, Condenser (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lighting Device Outwards From Vehicle And Optical Signal (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10334722 | 2003-07-30 | ||
| DE10334722.4 | 2003-07-30 | ||
| PCT/EP2004/003854 WO2005015314A2 (en) | 2003-07-30 | 2004-04-13 | An illumination system for microlithography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007500432A JP2007500432A (ja) | 2007-01-11 |
| JP2007500432A5 JP2007500432A5 (enExample) | 2007-06-07 |
| JP5026788B2 true JP5026788B2 (ja) | 2012-09-19 |
Family
ID=34129472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006521398A Expired - Fee Related JP5026788B2 (ja) | 2003-07-30 | 2004-04-13 | マイクロリソグラフィの照明システム |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7911584B2 (enExample) |
| EP (1) | EP1649324B1 (enExample) |
| JP (1) | JP5026788B2 (enExample) |
| KR (1) | KR101144458B1 (enExample) |
| AT (1) | ATE502323T1 (enExample) |
| DE (1) | DE602004031844D1 (enExample) |
| WO (1) | WO2005015314A2 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7572556B2 (en) | 2003-09-17 | 2009-08-11 | Carl Zeiss Smt Ag | Masks, lithography device and semiconductor component |
| DE102005042005A1 (de) | 2004-12-23 | 2006-07-06 | Carl Zeiss Smt Ag | Hochaperturiges Objektiv mit obskurierter Pupille |
| WO2006136353A1 (en) * | 2005-06-21 | 2006-12-28 | Carl Zeiss Smt Ag | A double-facetted illumination system with attenuator elements on the pupil facet mirror |
| JP2007150295A (ja) | 2005-11-10 | 2007-06-14 | Carl Zeiss Smt Ag | ラスタ要素を有する光学装置、及びこの光学装置を有する照射システム |
| WO2007093433A1 (de) | 2006-02-17 | 2007-08-23 | Carl Zeiss Smt Ag | Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem |
| DE102006020734A1 (de) | 2006-05-04 | 2007-11-15 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Lithographie sowie erstes und zweites optisches Element zum Einsatz in einem derartigen Beleuchtungssystem |
| DE102006059024A1 (de) | 2006-12-14 | 2008-06-19 | Carl Zeiss Smt Ag | Projektionsbelichtungsanlage für die Mikrolithographie, Beleuchtungsoptik für eine derartige Projektionsbelichtungsanlage, Verfahren zum Betrieb einer derartigen Projektionsbelichtungsanlage, Verfahren zur Herstellung eines mikrostrukturierten Bauteils sowie durch das Verfahren hergestelltes mikrostrukturiertes Bauteil |
| DE102007023411A1 (de) | 2006-12-28 | 2008-07-03 | Carl Zeiss Smt Ag | Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik |
| WO2008101664A1 (en) * | 2007-02-20 | 2008-08-28 | Carl Zeiss Smt Ag | Optical element with multiple primary light sources |
| US7843549B2 (en) * | 2007-05-23 | 2010-11-30 | Asml Holding N.V. | Light attenuating filter for correcting field dependent ellipticity and uniformity |
| JP2010528480A (ja) * | 2007-05-31 | 2010-08-19 | カール・ツァイス・エスエムティー・アーゲー | 成形によって光学素子を作製する方法、この方法により作製した光学素子、集光器および照明系 |
| DE102007041004A1 (de) | 2007-08-29 | 2009-03-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie |
| US8908151B2 (en) * | 2008-02-14 | 2014-12-09 | Nikon Corporation | Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system |
| DE102008001511A1 (de) | 2008-04-30 | 2009-11-05 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die EUV-Mikrolithografie sowie Beleuchtungssystem und Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| DE102008002749A1 (de) * | 2008-06-27 | 2009-12-31 | Carl Zeiss Smt Ag | Beleuchtungsoptik für die Mikrolithografie |
| NL2003449A (en) * | 2008-10-28 | 2010-04-29 | Asml Netherlands Bv | Fly's eye integrator, illuminator, lithographic apparatus and method. |
| WO2010108516A1 (en) | 2009-03-27 | 2010-09-30 | Carl Zeiss Smt Ag | Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind |
| DE102009014701A1 (de) | 2009-03-27 | 2010-09-30 | Carl Zeiss Smt Ag | Optische Baugruppe |
| JP5070242B2 (ja) * | 2009-05-27 | 2012-11-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | リソグラフィ装置 |
| DE102009045491A1 (de) | 2009-10-08 | 2010-11-25 | Carl Zeiss Smt Ag | Beleuchtungsoptik |
| KR101505256B1 (ko) * | 2010-04-23 | 2015-03-30 | 칼 짜이스 에스엠티 게엠베하 | 리소그래픽 시스템의 광학 소자의 조작을 포함하는 리소그래픽 시스템의 작동 방법 |
| EP2622609A1 (en) | 2010-09-27 | 2013-08-07 | Carl Zeiss SMT GmbH | Mirror, projection objective comprising such a mirror, and projection exposure apparatus for microlithography comprising such a projection objective |
| DE102011085132A1 (de) | 2010-11-24 | 2012-05-24 | Carl Zeiss Smt Gmbh | Optische Baugruppe für die Projektionslithografie |
| DE102010062720B4 (de) | 2010-12-09 | 2012-07-12 | Carl Zeiss Smt Gmbh | EUV-Lithographiesystem |
| NL2008009A (en) * | 2011-02-02 | 2012-08-06 | Asml Netherlands Bv | Illumination system, lithographic apparatus and method. |
| DE102011004326A1 (de) | 2011-02-17 | 2012-08-23 | Carl Zeiss Smt Gmbh | Optische Baugruppe für eine Beleuchtungsoptik für die Projektionslithographie |
| JP2013072845A (ja) * | 2011-09-29 | 2013-04-22 | Nuflare Technology Inc | パターン検査装置及びパターン検査方法 |
| WO2013143594A1 (en) * | 2012-03-29 | 2013-10-03 | Carl Zeiss Smt Gmbh | Apparatus and method for compensating a defect of a channel of a microlithographic projection exposure system |
| DE102012210174A1 (de) * | 2012-06-18 | 2013-06-06 | Carl Zeiss Smt Gmbh | Optisches Bauelement |
| DE102012218221A1 (de) * | 2012-10-05 | 2014-04-10 | Carl Zeiss Smt Gmbh | Monitorsystem zum Bestimmen von Orientierungen von Spiegelelementen und EUV-Lithographiesystem |
| DE102014203187A1 (de) | 2014-02-21 | 2015-08-27 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
| DE102014217612A1 (de) | 2014-09-03 | 2016-03-03 | Carl Zeiss Smt Gmbh | Beleuchtungoptik für die Projektonslithograpfie |
| US11175487B2 (en) * | 2017-06-19 | 2021-11-16 | Suss Microtec Photonic Systems Inc. | Optical distortion reduction in projection systems |
| JP2019028392A (ja) * | 2017-08-03 | 2019-02-21 | セイコーエプソン株式会社 | 光源装置、照明装置及びプロジェクター |
| DE102021120952B3 (de) * | 2021-08-11 | 2022-11-10 | Carl Zeiss Smt Gmbh | Verfahren zur Korrektur eines Telezentriefehlers einer Abbildungsvorrichtung und Maskeninspektionsmikroskop |
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| DE561573C (de) | 1928-04-05 | 1932-10-15 | Aeg | Beleuchtungseinrichtung fuer Bildwerfer |
| US1880414A (en) | 1930-01-03 | 1932-10-04 | Eastman Kodak Co | Illuminating system for photographic apparatus |
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| US2183249A (en) | 1937-11-06 | 1939-12-12 | Zeiss Ikon Ag | Illuminating device for projectors |
| US3541323A (en) | 1968-05-16 | 1970-11-17 | Eg & G Inc | Laser beam projector |
| US3988066A (en) | 1974-01-12 | 1976-10-26 | Canon Kabushiki Kaisha | Light exposure apparatus for printing |
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| US4109304A (en) | 1976-02-23 | 1978-08-22 | Khvalovsky Vladimir Vasilievic | Device for coherent lighting of objects |
| US4155630A (en) | 1977-11-17 | 1979-05-22 | University Of Delaware | Speckle elimination by random spatial phase modulation |
| DE2803277A1 (de) | 1978-01-26 | 1979-08-02 | Bosch Gmbh Robert | Vorrichtung zur belichtung einer auf eine oberflaeche eines substrats aufgebrachten fotolackschicht |
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| JPS60218635A (ja) | 1984-04-13 | 1985-11-01 | Canon Inc | 照明装置 |
| US4936665A (en) | 1987-10-25 | 1990-06-26 | Whitney Theodore R | High resolution imagery systems and methods |
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| NL8901077A (nl) | 1989-04-28 | 1990-11-16 | Koninkl Philips Electronics Nv | Optische belichtingsstelsel en projectie-apparaat voorzien van een dergelijk stelsel. |
| JP3360686B2 (ja) | 1990-12-27 | 2002-12-24 | 株式会社ニコン | 照明光学装置および投影露光装置並びに露光方法および素子製造方法 |
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| DE10138313A1 (de) | 2001-01-23 | 2002-07-25 | Zeiss Carl | Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm |
| DE10053587A1 (de) | 2000-10-27 | 2002-05-02 | Zeiss Carl | Beleuchtungssystem mit variabler Einstellung der Ausleuchtung |
| US6438199B1 (en) | 1998-05-05 | 2002-08-20 | Carl-Zeiss-Stiftung | Illumination system particularly for microlithography |
| DE10100265A1 (de) | 2001-01-08 | 2002-07-11 | Zeiss Carl | Beleuchtungssystem mit Rasterelementen unterschiedlicher Größe |
| EP0955641B1 (de) | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
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| JP2000162414A (ja) | 1998-09-22 | 2000-06-16 | Nikon Corp | 反射鏡の製造方法又は反射型照明装置又は半導体露光装置 |
| US6573978B1 (en) | 1999-01-26 | 2003-06-03 | Mcguire, Jr. James P. | EUV condenser with non-imaging optics |
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| US20040032576A1 (en) * | 1999-03-26 | 2004-02-19 | Nikon Corporation | Exposure method and apparatus |
| DE19935568A1 (de) * | 1999-07-30 | 2001-02-15 | Zeiss Carl Fa | Steuerung der Beleuchtungsverteilung in der Austrittspupille eines EUV-Beleuchtungssystems |
| WO2001009684A1 (de) | 1999-07-30 | 2001-02-08 | Carl Zeiss | Steuerung der beleuchtungsverteilung in der austrittspupille eines euv-beleuchtungssystems |
| KR100662756B1 (ko) | 2000-01-07 | 2007-01-02 | 주식회사 엘지이아이 | 디지털 티브이의 채널 등화기 |
| EP1280008B2 (en) | 2001-07-27 | 2011-09-14 | Canon Kabushiki Kaisha | Illumination system, projection exposure apparatus and device manufacturing method |
| TW554411B (en) * | 2001-08-23 | 2003-09-21 | Nikon Corp | Exposure apparatus |
| JP2003185798A (ja) * | 2001-12-13 | 2003-07-03 | Nikon Corp | 軟x線光源装置およびeuv露光装置ならびに照明方法 |
| SG121762A1 (en) | 2002-03-18 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus, and device manufacturing method |
| EP1870772B1 (en) * | 2002-03-18 | 2013-10-23 | ASML Netherlands B.V. | Lithographic apparatus |
| JP2004343082A (ja) * | 2003-04-17 | 2004-12-02 | Asml Netherlands Bv | 凹面および凸面を含む集光器を備えたリトグラフ投影装置 |
| US7636149B2 (en) | 2003-05-09 | 2009-12-22 | Nikon Corporation | Optical systems that correct optical irregularities, and projection-exposure systems and methods comprising same |
-
2004
- 2004-04-13 WO PCT/EP2004/003854 patent/WO2005015314A2/en not_active Ceased
- 2004-04-13 US US10/563,175 patent/US7911584B2/en not_active Expired - Fee Related
- 2004-04-13 DE DE602004031844T patent/DE602004031844D1/de not_active Expired - Lifetime
- 2004-04-13 JP JP2006521398A patent/JP5026788B2/ja not_active Expired - Fee Related
- 2004-04-13 AT AT04726980T patent/ATE502323T1/de not_active IP Right Cessation
- 2004-04-13 EP EP04726980A patent/EP1649324B1/en not_active Expired - Lifetime
- 2004-04-13 KR KR1020057025338A patent/KR101144458B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005015314A2 (en) | 2005-02-17 |
| US7911584B2 (en) | 2011-03-22 |
| DE602004031844D1 (de) | 2011-04-28 |
| JP2007500432A (ja) | 2007-01-11 |
| ATE502323T1 (de) | 2011-04-15 |
| KR20060039876A (ko) | 2006-05-09 |
| US20070058274A1 (en) | 2007-03-15 |
| EP1649324B1 (en) | 2011-03-16 |
| KR101144458B1 (ko) | 2012-05-14 |
| EP1649324A2 (en) | 2006-04-26 |
| WO2005015314A3 (en) | 2005-11-24 |
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