JP5026500B2 - セラミック基板の製造方法及びこれを用いて製作したセラミック基板 - Google Patents
セラミック基板の製造方法及びこれを用いて製作したセラミック基板 Download PDFInfo
- Publication number
- JP5026500B2 JP5026500B2 JP2009288087A JP2009288087A JP5026500B2 JP 5026500 B2 JP5026500 B2 JP 5026500B2 JP 2009288087 A JP2009288087 A JP 2009288087A JP 2009288087 A JP2009288087 A JP 2009288087A JP 5026500 B2 JP5026500 B2 JP 5026500B2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic
- firing
- temperature
- ceramic substrate
- laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000919 ceramic Substances 0.000 title claims description 231
- 239000000758 substrate Substances 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000010304 firing Methods 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 21
- 230000000977 initiatory effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 238000009499 grossing Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
- C04B2235/9615—Linear firing shrinkage
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/32—Ceramic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/66—Forming laminates or joined articles showing high dimensional accuracy, e.g. indicated by the warpage
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Description
10、20、30 焼成セッター
100、200、300 セラミック積層体
110、230、310、330 温度補償用セラミック層
Claims (3)
- 焼成セッターを設けるステップと、
前記焼成セッター上に少なくとも1つの内部拘束層が備えられたセラミック積層体を形成するステップと、
前記セラミック積層体の上部面及び前記焼成セッターと接する前記セラミック積層体の下部面に焼成収縮開始温度を有する温度補償用セラミック層を提供するステップと、
前記セラミック積層体を焼成するステップと、
を含み、
前記セラミック積層体の下部面に提供される前記温度補償用セラミック層は、前記セラミック積層体の焼成収縮開始温度よりも低い焼成収縮開始温度を有し、前記セラミック積層体の上部面に提供される前記温度補償用セラミック層は、前記セラミック積層体の焼成収縮開始温度よりも高い焼成収縮開始温度を有することを特徴とするセラミック基板の製造方法。 - 前記焼成は、前記セラミック積層体と前記温度補償用セラミック層とが一体化されるよう、同時に完結することを特徴とする請求項1に記載のセラミック基板の製造方法。
- 内部に少なくとも1つの内部拘束層が備えられたセラミック積層体と、
前記セラミック積層体の上部面及び焼成セッターと接する前記セラミック積層体の下部面に提供される温度補償用セラミック層と、
を含み、
前記セラミック積層体の下部面に提供される前記温度補償用セラミック層は、前記セラミック積層体の焼成収縮開始温度よりも低い焼成収縮開始温度を有し、前記セラミック積層体の上部面に提供される前記温度補償用セラミック層は、前記セラミック積層体の焼成収縮開始温度よりも高い焼成収縮開始温度を有することを特徴とするセラミック基板。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2009-0085931 | 2009-09-11 | ||
KR1020090085931A KR101079381B1 (ko) | 2009-09-11 | 2009-09-11 | 세라믹 기판의 제조 방법 및 이를 이용하여 제작한 세라믹 기판 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011061180A JP2011061180A (ja) | 2011-03-24 |
JP5026500B2 true JP5026500B2 (ja) | 2012-09-12 |
Family
ID=43730873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009288087A Expired - Fee Related JP5026500B2 (ja) | 2009-09-11 | 2009-12-18 | セラミック基板の製造方法及びこれを用いて製作したセラミック基板 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110064952A1 (ja) |
JP (1) | JP5026500B2 (ja) |
KR (1) | KR101079381B1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101506760B1 (ko) * | 2011-08-31 | 2015-03-30 | 삼성전기주식회사 | 자성기판 및 자성기판 제조방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3558346A (en) * | 1968-03-27 | 1971-01-26 | Corning Glass Works | Double glazed ceramic substrates |
US5254191A (en) * | 1990-10-04 | 1993-10-19 | E. I. Du Pont De Nemours And Company | Method for reducing shrinkage during firing of ceramic bodies |
US5708570A (en) * | 1995-10-11 | 1998-01-13 | Hughes Aircraft Company | Shrinkage-matched circuit package utilizing low temperature co-fired ceramic structures |
JP3666321B2 (ja) * | 1999-10-21 | 2005-06-29 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法 |
JP3825224B2 (ja) * | 2000-03-28 | 2006-09-27 | 京セラ株式会社 | ガラスセラミック基板の製造方法 |
JP3633435B2 (ja) | 2000-04-10 | 2005-03-30 | 株式会社村田製作所 | 多層セラミック基板、その製造方法および設計方法、ならびに電子装置 |
JP3909189B2 (ja) | 2000-04-24 | 2007-04-25 | 京セラ株式会社 | ガラスセラミック基板の製造方法 |
JP3591437B2 (ja) * | 2000-09-07 | 2004-11-17 | 株式会社村田製作所 | 多層セラミック基板およびその製造方法ならびに電子装置 |
JP3669255B2 (ja) * | 2000-09-19 | 2005-07-06 | 株式会社村田製作所 | セラミック多層基板の製造方法および未焼成セラミック積層体 |
US6776861B2 (en) * | 2002-06-04 | 2004-08-17 | E. I. Du Pont De Nemours And Company | Tape composition and process for internally constrained sintering of low temperature co-fired ceramic |
JP4089356B2 (ja) * | 2002-08-30 | 2008-05-28 | 株式会社村田製作所 | 多層セラミック基板の製造方法 |
DE602004016548D1 (de) * | 2003-11-21 | 2008-10-23 | Juichi Kasai | T hoher luftdichtheit |
JP4443257B2 (ja) * | 2004-02-25 | 2010-03-31 | 京セラ株式会社 | セラミックスの製法 |
US7068492B2 (en) * | 2004-11-22 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Process for the constrained sintering of a pseudo-symmetrically configured low temperature cofired ceramic structure |
KR100790694B1 (ko) * | 2006-06-30 | 2008-01-02 | 삼성전기주식회사 | 캐패시터 내장형 ltcc 기판 제조방법 |
-
2009
- 2009-09-11 KR KR1020090085931A patent/KR101079381B1/ko not_active IP Right Cessation
- 2009-12-18 JP JP2009288087A patent/JP5026500B2/ja not_active Expired - Fee Related
- 2009-12-31 US US12/650,801 patent/US20110064952A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20110064952A1 (en) | 2011-03-17 |
JP2011061180A (ja) | 2011-03-24 |
KR20110028030A (ko) | 2011-03-17 |
KR101079381B1 (ko) | 2011-11-02 |
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