JP5015433B2 - Esd防護用の高速スイッチング・ダイオード内臓ledチップ - Google Patents
Esd防護用の高速スイッチング・ダイオード内臓ledチップ Download PDFInfo
- Publication number
- JP5015433B2 JP5015433B2 JP2005182564A JP2005182564A JP5015433B2 JP 5015433 B2 JP5015433 B2 JP 5015433B2 JP 2005182564 A JP2005182564 A JP 2005182564A JP 2005182564 A JP2005182564 A JP 2005182564A JP 5015433 B2 JP5015433 B2 JP 5015433B2
- Authority
- JP
- Japan
- Prior art keywords
- led
- esd protection
- protection diode
- junction
- type material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 36
- 238000010586 diagram Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05666—Titanium [Ti] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
52 ESD防護ダイオード
60 トレンチ
62 N型材料
64 P型材料
66,67,68,69 金属層
70,71、83,84,85,86 金属相互接続部
80,82,92,93 金属部
88 N金属部
98 基板
100 P型層
102 N型層
104 活性層
106 導電体材料
110 サブマウント
Claims (20)
- 発光素子において、
基板上の半導体材料により形成され、その端子に順方向のバイアス電圧を印加することにより発光する発光ダイオード(LED)と、
前記基板上の半導体材料により形成された静電放電(ESD)防護ダイオードであって、閾値より高い逆バイアス電圧が前記LEDの前記端子に印加された場合に、電流を分路して前記LEDから離すことにより、前記LEDを損傷から防護するために、前記LEDに対して逆並列構成に接続されているESD防護ダイオードと、を備えており、
前記ESD防護ダイオードは、PN接合部を形成しているN型材料とP型材料の接合部を備えており、前記PN接合部の長辺の長さは前記PN接合部の幅の少なくとも2倍であり、前記ESD防護ダイオードが前記基板に占める面積は、前記基板上の前記LEDと前記ESD防護ダイオードが占める合計面積の30%よりも小さく、前記素子は、更に、
前記PN接合部の長辺の長さの少なくとも50%に亘って前記N型材料に接触している第1の金属層部分を備え、
前記PN接合部の少なくとも一部は丸い角部を有していることを特徴とする素子。 - 前記ESD防護ダイオードが前記基板に占める面積は、前記基板上の前記LEDと前記ESD防護ダイオードが占める合計面積の10%よりも小さいことを特徴とする、請求項1に記載の素子。
- 前記金属部分は、前記PN接合部の長辺の長さの少なくとも75%に亘って前記N型材料に接触していることを特徴とする、請求項1に記載の素子。
- 前記N型材料に接触している前記第1の金属層部分は、前記P型材料を取り囲んでいることを特徴とする、請求項1に記載の素子。
- 前記N型材料に接触している前記第1の金属層部分は、前記P型材料を完全に取り囲んでいることを特徴とする請求項1に記載の素子。
- 前記N型材料に接触している前記第1の金属層部分は、前記P型材料の少なくとも2つの側辺で前記N型材料に接していることを特徴とする、請求項1に記載の素子。
- 前記PN接合部に活性領域が形成されていることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードは、前記LEDと前記ESD防護ダイオードの表面を覆って形成された第2の金属層部分によって相互接続されていることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードは、前記LEDと前記ESD防護ダイオードに対して外付けのパッケージの導電体によって相互接続されていることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードは、前記LEDと前記ESD防護ダイオードに対して外付けのサブマウント上の導電体によって相互接続されていることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードの表面積は、1mm2よりも小さいことを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードの表面積は、1mm2よりも大きいことを特徴とする、請求項1に記載の素子。
- 前記ESD防護ダイオードの表面積は、20,000から60,000平方ミクロンであることを特徴とする、請求項1に記載の素子。
- 前記ESD防護ダイオードの表面積は、60,000から100,000平方ミクロンであることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードを分離するため、前記LEDと前記ESD防護ダイオードの間にトレンチを更に備えていることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードは、窒化ガリウムベースのダイオードであることを特徴とする、請求項1に記載の素子。
- 前記LEDと前記ESD防護ダイオードは、フリップチップを形成していることを特徴とする、請求項1に記載の素子。
- 発光素子を形成するための方法において、
基板上に発光ダイオード(LED)を形成する段階であって、前記LEDは、その端子に順方向のバイアス電圧を印加することにより発光する、LEDを形成する段階と
前記基板上に静電放電(ESD)防護ダイオードを形成する段階であって、閾値より高い逆バイアス電圧が前記LEDの端子に印加された場合に、電流を分路して前記LEDから離すことにより、前記LEDを損傷から防護するために、前記LEDに対して逆並列構成に接続されたESD防護ダイオードを形成する段階と、を含んでおり、
前記ESD防護ダイオードは、PN接合部を形成しているN型材料とP型材料の接合部を備えており、前記PN接合部の長辺の長さは前記PN接合部の幅の少なくとも2倍であり、前記ESD防護ダイオードが前記基板に占める面積は、前記基板上の前記LEDと前記ESDが占める合計面積の30%よりも小さく、前記方法は、更に、
前記PN接合部の長辺の長さの少なくとも50%に亘って前記N型材料に接触している第1の金属層部分を形成する段階を含み、
前記PN接合部の少なくとも一部は丸い角部を有していることを特徴とする方法。 - 前記ESD防護ダイオードが前記基板に占める面積は、前記基板上の前記LEDと前記ESD防護ダイオードが占める合計面積の10%よりも小さいことを特徴とする、請求項18に記載の方法。
- 前記第1の金属部分は、前記PN接合部の長辺の長さの少なくとも75%に亘って前記N型材料に接触していることを特徴とする、請求項18に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/855277 | 2004-05-26 | ||
US10/855,277 US7064353B2 (en) | 2004-05-26 | 2004-05-26 | LED chip with integrated fast switching diode for ESD protection |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005340849A JP2005340849A (ja) | 2005-12-08 |
JP5015433B2 true JP5015433B2 (ja) | 2012-08-29 |
Family
ID=34939792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005182564A Active JP5015433B2 (ja) | 2004-05-26 | 2005-05-26 | Esd防護用の高速スイッチング・ダイオード内臓ledチップ |
Country Status (4)
Country | Link |
---|---|
US (1) | US7064353B2 (ja) |
EP (1) | EP1601019B1 (ja) |
JP (1) | JP5015433B2 (ja) |
TW (1) | TWI389287B (ja) |
Families Citing this family (131)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001017320A1 (en) | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
US7446030B2 (en) * | 1999-08-27 | 2008-11-04 | Shocking Technologies, Inc. | Methods for fabricating current-carrying structures using voltage switchable dielectric materials |
US7825491B2 (en) * | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
US7695644B2 (en) * | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
TW200501464A (en) * | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
KR100576872B1 (ko) * | 2004-09-17 | 2006-05-10 | 삼성전기주식회사 | 정전기 방전 방지기능을 갖는 질화물 반도체 발광소자 |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
US7473933B2 (en) * | 2004-10-29 | 2009-01-06 | Ledengin, Inc. (Cayman) | High power LED package with universal bonding pads and interconnect arrangement |
US7670872B2 (en) * | 2004-10-29 | 2010-03-02 | LED Engin, Inc. (Cayman) | Method of manufacturing ceramic LED packages |
US9929326B2 (en) | 2004-10-29 | 2018-03-27 | Ledengin, Inc. | LED package having mushroom-shaped lens with volume diffuser |
US8324641B2 (en) | 2007-06-29 | 2012-12-04 | Ledengin, Inc. | Matrix material including an embedded dispersion of beads for a light-emitting device |
US8134292B2 (en) * | 2004-10-29 | 2012-03-13 | Ledengin, Inc. | Light emitting device with a thermal insulating and refractive index matching material |
US7772609B2 (en) * | 2004-10-29 | 2010-08-10 | Ledengin, Inc. (Cayman) | LED package with structure and materials for high heat dissipation |
US8816369B2 (en) * | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
KR100665116B1 (ko) * | 2005-01-27 | 2007-01-09 | 삼성전기주식회사 | Esd 보호용 led를 구비한 질화갈륨계 발광 소자 및그 제조 방법 |
TW200707806A (en) * | 2005-06-17 | 2007-02-16 | Univ California | (Al, Ga, In)N and ZnO direct wafer bonded structure for optoelectronic applications, and its fabrication method |
EP1969627A4 (en) * | 2005-11-22 | 2010-01-20 | Shocking Technologies Inc | SEMICONDUCTOR DEVICES COMPRISING VOLTAGE SWITCHING MATERIALS PROVIDING OVERVOLTAGE PROTECTION |
JP2009530798A (ja) | 2006-01-05 | 2009-08-27 | イルミテックス, インコーポレイテッド | Ledから光を導くための独立した光学デバイス |
KR100765075B1 (ko) * | 2006-03-26 | 2007-10-09 | 엘지이노텍 주식회사 | 질화물 반도체 발광 소자 및 그 제조방법 |
JP4519097B2 (ja) * | 2006-03-29 | 2010-08-04 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7994514B2 (en) * | 2006-04-21 | 2011-08-09 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting device with integrated electronic components |
US7829899B2 (en) | 2006-05-03 | 2010-11-09 | Cree, Inc. | Multi-element LED lamp package |
KR100924222B1 (ko) * | 2006-06-29 | 2009-11-02 | 엘지디스플레이 주식회사 | 정전기 방전 회로 및 이를 구비한 액정표시장치 |
US20080029405A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having conductive or semi-conductive organic material |
US7968014B2 (en) | 2006-07-29 | 2011-06-28 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
WO2008017207A1 (fr) * | 2006-08-02 | 2008-02-14 | Helio Optoelectronics Corporation | Un circuit de diode émettrice de lumière comportant une pluralité de tensions critiques et un dispositif de diode émettrice de lumière |
MY145875A (en) | 2006-09-24 | 2012-05-15 | Shocking Technologies Inc | Formulations for voltage switchable dielectric material having a stepped voltage response and methods for making the same |
JP2010506402A (ja) | 2006-10-02 | 2010-02-25 | イルミテックス, インコーポレイテッド | Ledのシステムおよび方法 |
WO2008073400A1 (en) | 2006-12-11 | 2008-06-19 | The Regents Of The University Of California | Transparent light emitting diodes |
KR100875128B1 (ko) * | 2007-01-16 | 2008-12-22 | 한국광기술원 | 고내정전압을 갖는 발광다이오드 및 그의 제조방법 |
KR20080089859A (ko) * | 2007-04-02 | 2008-10-08 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조 방법 |
US8436371B2 (en) * | 2007-05-24 | 2013-05-07 | Cree, Inc. | Microscale optoelectronic device packages |
US7793236B2 (en) | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
DE102007061479A1 (de) * | 2007-12-20 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Leuchtdiodenchip mit Überspannungsschutz |
US8206614B2 (en) | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
RU2526043C2 (ru) * | 2008-01-30 | 2014-08-20 | Конинклейке Филипс Электроникс Н.В. | Универсальный полупроводниковый прибор, модуль и способ функционирования |
JP2011512037A (ja) | 2008-02-08 | 2011-04-14 | イルミテックス, インコーポレイテッド | エミッタ層成形のためのシステムおよび方法 |
US8203421B2 (en) | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
DE102008022942A1 (de) | 2008-05-09 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
DE102008034560B4 (de) | 2008-07-24 | 2022-10-27 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung eines strahlungsemittierenden Halbleiterchips |
KR101428085B1 (ko) * | 2008-07-24 | 2014-08-07 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
WO2010015106A1 (zh) * | 2008-08-06 | 2010-02-11 | 海立尔股份有限公司 | 交流发光二极管结构 |
US9208931B2 (en) | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
JP2012504870A (ja) | 2008-09-30 | 2012-02-23 | ショッキング テクノロジーズ インコーポレイテッド | 導電コアシェル粒子を含有する電圧で切替可能な誘電体材料 |
US8075165B2 (en) | 2008-10-14 | 2011-12-13 | Ledengin, Inc. | Total internal reflection lens and mechanical retention and locating device |
US8362871B2 (en) | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
DE102009006177A1 (de) | 2008-11-28 | 2010-06-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterchip |
TW201034256A (en) | 2008-12-11 | 2010-09-16 | Illumitex Inc | Systems and methods for packaging light-emitting diode devices |
US8507300B2 (en) * | 2008-12-24 | 2013-08-13 | Ledengin, Inc. | Light-emitting diode with light-conversion layer |
US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
CN101800219B (zh) * | 2009-02-09 | 2019-09-17 | 晶元光电股份有限公司 | 发光元件 |
US8537512B2 (en) * | 2009-02-26 | 2013-09-17 | Freescale Semiconductor, Inc. | ESD protection using isolated diodes |
EP2412212A1 (en) | 2009-03-26 | 2012-02-01 | Shocking Technologies Inc | Components having voltage switchable dielectric materials |
US7985000B2 (en) * | 2009-04-08 | 2011-07-26 | Ledengin, Inc. | Lighting apparatus having multiple light-emitting diodes with individual light-conversion layers |
US8384097B2 (en) | 2009-04-08 | 2013-02-26 | Ledengin, Inc. | Package for multiple light emitting diodes |
US8598793B2 (en) | 2011-05-12 | 2013-12-03 | Ledengin, Inc. | Tuning of emitter with multiple LEDs to a single color bin |
JP5728171B2 (ja) * | 2009-06-29 | 2015-06-03 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8585253B2 (en) | 2009-08-20 | 2013-11-19 | Illumitex, Inc. | System and method for color mixing lens array |
US8449128B2 (en) | 2009-08-20 | 2013-05-28 | Illumitex, Inc. | System and method for a lens and phosphor layer |
US9053844B2 (en) | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
US8303141B2 (en) * | 2009-12-17 | 2012-11-06 | Ledengin, Inc. | Total internal reflection lens with integrated lamp cover |
US9320135B2 (en) | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
US9224728B2 (en) | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
US9080729B2 (en) | 2010-04-08 | 2015-07-14 | Ledengin, Inc. | Multiple-LED emitter for A-19 lamps |
US9345095B2 (en) | 2010-04-08 | 2016-05-17 | Ledengin, Inc. | Tunable multi-LED emitter module |
US8858022B2 (en) | 2011-05-05 | 2014-10-14 | Ledengin, Inc. | Spot TIR lens system for small high-power emitter |
DE102010024079A1 (de) | 2010-06-17 | 2011-12-22 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE102010032813A1 (de) * | 2010-07-30 | 2012-02-02 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
US9171883B2 (en) | 2010-08-30 | 2015-10-27 | Epistar Corporation | Light emitting device |
JP5547667B2 (ja) * | 2011-02-01 | 2014-07-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8513900B2 (en) | 2011-05-12 | 2013-08-20 | Ledengin, Inc. | Apparatus for tuning of emitter with multiple LEDs to a single color bin |
US9000453B2 (en) | 2011-06-28 | 2015-04-07 | Osram Sylvania Inc. | Electrostatic discharge protection for electrical components, devices including such protection and methods for making the same |
US8809897B2 (en) | 2011-08-31 | 2014-08-19 | Micron Technology, Inc. | Solid state transducer devices, including devices having integrated electrostatic discharge protection, and associated systems and methods |
US9490239B2 (en) | 2011-08-31 | 2016-11-08 | Micron Technology, Inc. | Solid state transducers with state detection, and associated systems and methods |
US8441104B1 (en) | 2011-11-16 | 2013-05-14 | Analog Devices, Inc. | Electrical overstress protection using through-silicon-via (TSV) |
CN102522400B (zh) * | 2011-11-30 | 2014-11-26 | 晶科电子(广州)有限公司 | 一种防静电损伤的垂直发光器件及其制造方法 |
DE102011056706B4 (de) * | 2011-12-20 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung von optoelektronischen Halbleiterbauteilen, Anordnung und optoelektronisches Halbleiterbauteil |
US11032884B2 (en) | 2012-03-02 | 2021-06-08 | Ledengin, Inc. | Method for making tunable multi-led emitter module |
US9897284B2 (en) | 2012-03-28 | 2018-02-20 | Ledengin, Inc. | LED-based MR16 replacement lamp |
CN104380185B (zh) | 2012-05-18 | 2017-07-28 | 瑞尔D斯帕克有限责任公司 | 定向背光源 |
US9188731B2 (en) | 2012-05-18 | 2015-11-17 | Reald Inc. | Directional backlight |
US9235057B2 (en) | 2012-05-18 | 2016-01-12 | Reald Inc. | Polarization recovery in a directional display device |
US9678267B2 (en) | 2012-05-18 | 2017-06-13 | Reald Spark, Llc | Wide angle imaging directional backlights |
CN104321686B (zh) | 2012-05-18 | 2017-04-12 | 瑞尔D斯帕克有限责任公司 | 控制定向背光源的光源 |
CN105074941B (zh) * | 2012-12-06 | 2019-10-08 | 首尔伟傲世有限公司 | 发光二极管、照明模块、照明设备和背光单元 |
DE112013006122T5 (de) * | 2012-12-21 | 2015-09-10 | Osram Sylvania Inc. | Schutz vor elektrostatischen Entladungen für elektrische Komponenten, Vorrichtungen, die einen solchen Schutz aufweisen, und Verfahren zu ihrer Herstellung |
DE102013202904A1 (de) * | 2013-02-22 | 2014-08-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil und Verfahren zu seiner Herstellung |
WO2014130860A1 (en) | 2013-02-22 | 2014-08-28 | Reald Inc. | Directional backlight |
US9234801B2 (en) | 2013-03-15 | 2016-01-12 | Ledengin, Inc. | Manufacturing method for LED emitter with high color consistency |
CN103137646A (zh) | 2013-03-15 | 2013-06-05 | 中国科学院微电子研究所 | 用于双极型阻变存储器交叉阵列集成方式的选通器件单元 |
DE102013105631A1 (de) * | 2013-05-31 | 2014-12-04 | Osram Opto Semiconductors Gmbh | Träger für einen optoelektronischen Halbleiterchip und optoelektronisches Bauteil |
CN105474633B (zh) | 2013-06-17 | 2019-07-09 | 瑞尔D斯帕克有限责任公司 | 控制定向背光的光源 |
EP3058422B1 (en) | 2013-10-14 | 2019-04-24 | RealD Spark, LLC | Light input for directional backlight |
CN106068533B (zh) | 2013-10-14 | 2019-01-11 | 瑞尔D斯帕克有限责任公司 | 定向显示器的控制 |
US9551825B2 (en) * | 2013-11-15 | 2017-01-24 | Reald Spark, Llc | Directional backlights with light emitting element packages |
US9406654B2 (en) | 2014-01-27 | 2016-08-02 | Ledengin, Inc. | Package for high-power LED devices |
CN106662773B (zh) | 2014-06-26 | 2021-08-06 | 瑞尔D 斯帕克有限责任公司 | 定向防窥显示器 |
CN107003563B (zh) | 2014-10-08 | 2021-01-12 | 瑞尔D斯帕克有限责任公司 | 定向背光源 |
DE102014116512A1 (de) | 2014-11-12 | 2016-05-12 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Vorrichtung mit einem optoelektronischen Halbleiterbauelement |
WO2016086180A1 (en) | 2014-11-26 | 2016-06-02 | Ledengin, Inc. | Compact emitter for warm dimming and color tunable lamp |
WO2016105541A1 (en) | 2014-12-24 | 2016-06-30 | Reald Inc. | Adjustment of perceived roundness in stereoscopic image of a head |
US9530943B2 (en) | 2015-02-27 | 2016-12-27 | Ledengin, Inc. | LED emitter packages with high CRI |
US10459152B2 (en) | 2015-04-13 | 2019-10-29 | Reald Spark, Llc | Wide angle imaging directional backlights |
EP3304188B1 (en) | 2015-05-27 | 2020-10-07 | RealD Spark, LLC | Wide angle imaging directional backlights |
DE102015111558B4 (de) * | 2015-07-16 | 2023-02-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102015114010A1 (de) * | 2015-08-24 | 2017-03-02 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement, Verfahren zur Herstellung eines optoelektronischen Bauelements und Verfahren zum Betrieb eines optoelektronischen Bauelements |
CN108369977B (zh) | 2015-10-01 | 2021-06-15 | 克利公司 | 低光学损失倒装芯片固态照明设备 |
KR102445531B1 (ko) | 2015-10-21 | 2022-09-21 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
US10475418B2 (en) | 2015-10-26 | 2019-11-12 | Reald Spark, Llc | Intelligent privacy system, apparatus, and method thereof |
WO2017083526A1 (en) | 2015-11-10 | 2017-05-18 | Reald Inc. | Distortion matching polarization conversion systems and methods thereof |
CN108463667B (zh) | 2015-11-13 | 2020-12-01 | 瑞尔D斯帕克有限责任公司 | 广角成像定向背光源 |
EP3374822B1 (en) | 2015-11-13 | 2023-12-27 | RealD Spark, LLC | Surface features for imaging directional backlights |
KR20180087302A (ko) * | 2015-11-20 | 2018-08-01 | 루미리즈 홀딩 비.브이. | 개선된 led 디바이스 성능 및 신뢰성을 위한 콘택 에칭 및 금속화 |
CN108463787B (zh) | 2016-01-05 | 2021-11-30 | 瑞尔D斯帕克有限责任公司 | 多视角图像的注视校正 |
US10219345B2 (en) | 2016-11-10 | 2019-02-26 | Ledengin, Inc. | Tunable LED emitter with continuous spectrum |
CN108110024A (zh) * | 2018-01-16 | 2018-06-01 | 福建兆元光电有限公司 | 一种半导体发光元件 |
US11031527B2 (en) | 2018-01-29 | 2021-06-08 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11387389B2 (en) | 2018-01-29 | 2022-07-12 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US11923481B2 (en) | 2018-01-29 | 2024-03-05 | Creeled, Inc. | Reflective layers for light-emitting diodes |
US10575374B2 (en) | 2018-03-09 | 2020-02-25 | Ledengin, Inc. | Package for flip-chip LEDs with close spacing of LED chips |
US10879441B2 (en) | 2018-12-17 | 2020-12-29 | Cree, Inc. | Interconnects for light emitting diode chips |
US10985294B2 (en) | 2019-03-19 | 2021-04-20 | Creeled, Inc. | Contact structures for light emitting diode chips |
US11094848B2 (en) * | 2019-08-16 | 2021-08-17 | Creeled, Inc. | Light-emitting diode chip structures |
CN111415931A (zh) * | 2020-04-01 | 2020-07-14 | 扬州乾照光电有限公司 | 一种led芯片结构及其制作方法 |
US11508715B2 (en) | 2020-04-24 | 2022-11-22 | Creeled, Inc. | Light-emitting diode chip with electrical overstress protection |
US11821602B2 (en) | 2020-09-16 | 2023-11-21 | Reald Spark, Llc | Vehicle external illumination device |
WO2024030274A1 (en) | 2022-08-02 | 2024-02-08 | Reald Spark, Llc | Pupil tracking near-eye display |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US122139A (en) * | 1871-12-26 | Improvement in wrenches | ||
FR2319268A1 (fr) * | 1973-07-03 | 1977-02-18 | Radiotechnique Compelec | Diode electroluminescente protegee |
JP3787202B2 (ja) * | 1997-01-10 | 2006-06-21 | ローム株式会社 | 半導体発光素子 |
US6054716A (en) | 1997-01-10 | 2000-04-25 | Rohm Co., Ltd. | Semiconductor light emitting device having a protecting device |
US6333522B1 (en) | 1997-01-31 | 2001-12-25 | Matsushita Electric Industrial Co., Ltd. | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
SE514235C2 (sv) * | 1999-05-27 | 2001-01-29 | Eltex Sweden Ab | Bromsanordning för tråd i varpmaskin |
US6486499B1 (en) | 1999-12-22 | 2002-11-26 | Lumileds Lighting U.S., Llc | III-nitride light-emitting device with increased light generating capability |
US6547249B2 (en) | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
TW492202B (en) | 2001-06-05 | 2002-06-21 | South Epitaxy Corp | Structure of III-V light emitting diode (LED) arranged in flip chip configuration having structure for preventing electrostatic discharge |
TW545698U (en) | 2001-12-28 | 2003-08-01 | United Epitaxy Co Ltd | LED packaging structure with a static charge protecting device |
JP2004088083A (ja) * | 2002-06-25 | 2004-03-18 | Matsushita Electric Ind Co Ltd | 半導体発光素子、その製造方法及びその実装方法 |
KR100497121B1 (ko) * | 2002-07-18 | 2005-06-28 | 삼성전기주식회사 | 반도체 led 소자 |
US6958498B2 (en) * | 2002-09-27 | 2005-10-25 | Emcore Corporation | Optimized contact design for flip-chip LED |
-
2004
- 2004-05-26 US US10/855,277 patent/US7064353B2/en active Active
-
2005
- 2005-05-11 EP EP05103937.8A patent/EP1601019B1/en active Active
- 2005-05-23 TW TW094116731A patent/TWI389287B/zh active
- 2005-05-26 JP JP2005182564A patent/JP5015433B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
EP1601019A3 (en) | 2011-03-23 |
EP1601019A2 (en) | 2005-11-30 |
US7064353B2 (en) | 2006-06-20 |
US20050274956A1 (en) | 2005-12-15 |
EP1601019B1 (en) | 2017-07-12 |
TW200614486A (en) | 2006-05-01 |
TWI389287B (zh) | 2013-03-11 |
JP2005340849A (ja) | 2005-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5015433B2 (ja) | Esd防護用の高速スイッチング・ダイオード内臓ledチップ | |
JP5030372B2 (ja) | 半導体発光デバイス用の実装 | |
JP5744147B2 (ja) | 集積電子構成要素を有する半導体発光装置 | |
JP4996463B2 (ja) | 発光デバイスをパッケージするためのチップスケール方法およびチップスケールにパッケージされた発光デバイス | |
JP3673621B2 (ja) | チップ型発光素子 | |
JP4045767B2 (ja) | 半導体発光装置 | |
JP2009152637A (ja) | Esd保護用ledを具備した窒化ガリウム系発光素子及びその製造方法 | |
JP3559435B2 (ja) | 半導体発光素子 | |
JPWO2012086517A1 (ja) | 発光素子ユニットおよび発光素子パッケージ | |
TWI414082B (zh) | 具有過電壓保護之發光二極體晶片 | |
JP3663281B2 (ja) | 半導体発光素子 | |
JP2001044498A (ja) | 窒化物半導体発光素子 | |
JP2022033187A (ja) | 半導体発光装置 | |
US20150249072A1 (en) | Optoelectronic Component and Method for Producing an Optoelectronic Component | |
JP2007027539A (ja) | 半導体発光素子およびこれを用いた照明装置 | |
JP2002185049A (ja) | フリップチップ発光ダイオードおよびフリップチップ静電放電保護チップをパッケージにおける電極にダイレクトボンディングする方法 | |
KR101855202B1 (ko) | 반도체 발광소자 | |
US20140239340A1 (en) | Light emitting device, light emitting device package, and method for manufacturing light emitting device | |
CN106257698B (zh) | 半导体发光装置 | |
JP2004200277A (ja) | 複合発光素子 | |
CN112825342B (zh) | 发光二极管装置 | |
JPH11346007A (ja) | 半導体発光装置及びその製造方法 | |
JPH10209507A (ja) | 半導体発光素子 | |
KR101893579B1 (ko) | 웨이퍼 레벨의 발광 다이오드 어레이 | |
KR20210131954A (ko) | 반도체 발광소자에 전원을 공급하는 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080526 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110425 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110725 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110825 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120514 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120607 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150615 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5015433 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |