FR2319268A1 - Diode electroluminescente protegee - Google Patents

Diode electroluminescente protegee

Info

Publication number
FR2319268A1
FR2319268A1 FR7324413A FR7324413A FR2319268A1 FR 2319268 A1 FR2319268 A1 FR 2319268A1 FR 7324413 A FR7324413 A FR 7324413A FR 7324413 A FR7324413 A FR 7324413A FR 2319268 A1 FR2319268 A1 FR 2319268A1
Authority
FR
France
Prior art keywords
protected
electroluminescent diode
electroluminescent
diode
protected electroluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7324413A
Other languages
English (en)
Other versions
FR2319268B1 (fr
Inventor
Jacques Lebailly
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7324413A priority Critical patent/FR2319268A1/fr
Priority to DE2430873A priority patent/DE2430873C2/de
Priority to GB2882574A priority patent/GB1473877A/en
Priority to IT24641/74A priority patent/IT1015568B/it
Priority to NL7408825A priority patent/NL7408825A/xx
Priority to CA203,872A priority patent/CA1022661A/fr
Priority to US485202A priority patent/US3927344A/en
Priority to JP7548674A priority patent/JPS5238394B2/ja
Publication of FR2319268A1 publication Critical patent/FR2319268A1/fr
Application granted granted Critical
Publication of FR2319268B1 publication Critical patent/FR2319268B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
FR7324413A 1973-07-03 1973-07-03 Diode electroluminescente protegee Granted FR2319268A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR7324413A FR2319268A1 (fr) 1973-07-03 1973-07-03 Diode electroluminescente protegee
DE2430873A DE2430873C2 (de) 1973-07-03 1974-06-27 "Monolithische Halbleiteranordnung"
IT24641/74A IT1015568B (it) 1973-07-03 1974-06-28 Diodo elettroluminescente protetto
GB2882574A GB1473877A (en) 1973-07-03 1974-06-28 Protected electroluminescent diode
NL7408825A NL7408825A (nl) 1973-07-03 1974-07-01 Beveiligde elektroluminescerende diode.
CA203,872A CA1022661A (fr) 1973-07-03 1974-07-02 Diode electroluminescente protegee contre la surcharge
US485202A US3927344A (en) 1973-07-03 1974-07-02 Monolithic semiconductor device including a protected electroluminescent diode
JP7548674A JPS5238394B2 (fr) 1973-07-03 1974-07-03

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7324413A FR2319268A1 (fr) 1973-07-03 1973-07-03 Diode electroluminescente protegee

Publications (2)

Publication Number Publication Date
FR2319268A1 true FR2319268A1 (fr) 1977-02-18
FR2319268B1 FR2319268B1 (fr) 1978-03-31

Family

ID=9121999

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7324413A Granted FR2319268A1 (fr) 1973-07-03 1973-07-03 Diode electroluminescente protegee

Country Status (8)

Country Link
US (1) US3927344A (fr)
JP (1) JPS5238394B2 (fr)
CA (1) CA1022661A (fr)
DE (1) DE2430873C2 (fr)
FR (1) FR2319268A1 (fr)
GB (1) GB1473877A (fr)
IT (1) IT1015568B (fr)
NL (1) NL7408825A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230975A1 (de) * 1982-08-20 1984-02-23 Robert Bosch Gmbh, 7000 Stuttgart Kraftfahrzeugleuchte aus leuchtdioden oder leuchtdiodenchips
DE3940853A1 (de) * 1989-12-11 1991-06-13 Balzers Hochvakuum Anordnung zur niveauregelung verfluessigter gase
DE19945134C2 (de) * 1999-09-21 2003-08-14 Osram Opto Semiconductors Gmbh Lichtemittierendes Halbleiterbauelement hoher ESD-Festigkeit und Verfahren zu seiner Herstellung
US7064353B2 (en) * 2004-05-26 2006-06-20 Philips Lumileds Lighting Company, Llc LED chip with integrated fast switching diode for ESD protection

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1440202A (fr) * 1964-04-30 1966-05-27 Texas Instruments Inc Dispositif semi-conducteur engendrant un rayonnement optique

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3330983A (en) * 1962-07-06 1967-07-11 Gen Electric Heterojunction electroluminescent devices
US3418587A (en) * 1965-06-04 1968-12-24 American Electronic Lab High sensitivity and power signal detecting device
US3577043A (en) * 1967-12-07 1971-05-04 United Aircraft Corp Mosfet with improved voltage breakdown characteristics
US3560275A (en) * 1968-11-08 1971-02-02 Rca Corp Fabricating semiconductor devices
FR2127239A5 (fr) * 1971-03-01 1972-10-13 Radiotechnique Compelec
BE791927A (fr) * 1971-11-29 1973-03-16 Western Electric Co Procede de depot par croissance epitaxiale de couches de cristaux semi-conducteurs

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1440202A (fr) * 1964-04-30 1966-05-27 Texas Instruments Inc Dispositif semi-conducteur engendrant un rayonnement optique

Also Published As

Publication number Publication date
IT1015568B (it) 1977-05-20
GB1473877A (en) 1977-05-18
NL7408825A (nl) 1975-01-07
FR2319268B1 (fr) 1978-03-31
CA1022661A (fr) 1977-12-13
US3927344A (en) 1975-12-16
JPS5238394B2 (fr) 1977-09-28
JPS5039480A (fr) 1975-04-11
DE2430873C2 (de) 1982-12-09
DE2430873A1 (de) 1975-01-23

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Legal Events

Date Code Title Description
ST Notification of lapse