AT354517B - Lawinenlaufzeitdiode - Google Patents

Lawinenlaufzeitdiode

Info

Publication number
AT354517B
AT354517B AT188572A AT188572A AT354517B AT 354517 B AT354517 B AT 354517B AT 188572 A AT188572 A AT 188572A AT 188572 A AT188572 A AT 188572A AT 354517 B AT354517 B AT 354517B
Authority
AT
Austria
Prior art keywords
avalanche
diode
run
run diode
avalanche run
Prior art date
Application number
AT188572A
Other languages
English (en)
Other versions
ATA188572A (de
Inventor
J J Goedbloed
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of AT354517B publication Critical patent/AT354517B/de
Publication of ATA188572A publication Critical patent/ATA188572A/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B9/00—Generation of oscillations using transit-time effects
    • H03B9/12—Generation of oscillations using transit-time effects using solid state devices, e.g. Gunn-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/10—Drag reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
AT188572A 1971-03-10 1972-03-07 Lawinenlaufzeitdiode AT354517B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7103156A NL7103156A (de) 1971-03-10 1971-03-10

Publications (2)

Publication Number Publication Date
AT354517B true AT354517B (de) 1979-01-10
ATA188572A ATA188572A (de) 1979-06-15

Family

ID=19812649

Family Applications (1)

Application Number Title Priority Date Filing Date
AT188572A AT354517B (de) 1971-03-10 1972-03-07 Lawinenlaufzeitdiode

Country Status (12)

Country Link
US (1) US3808555A (de)
JP (1) JPS5221873B1 (de)
AT (1) AT354517B (de)
AU (1) AU469438B2 (de)
CA (1) CA953431A (de)
CH (1) CH539979A (de)
DE (1) DE2209783A1 (de)
FR (1) FR2128768B1 (de)
GB (1) GB1379274A (de)
IT (1) IT949966B (de)
NL (1) NL7103156A (de)
SE (1) SE374985B (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1485015A (en) * 1974-10-29 1977-09-08 Mullard Ltd Semi-conductor device manufacture
US3986192A (en) * 1975-01-02 1976-10-12 Bell Telephone Laboratories, Incorporated High efficiency gallium arsenide impatt diodes
FI77754C (fi) * 1986-12-23 1989-04-10 Kone Oy Lyftmotorenhet.
US10352970B2 (en) 2011-12-21 2019-07-16 Sony Corporation Detection apparatus, power receiving apparatus, non-contact power transmission system and detection method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1932842B2 (de) * 1968-08-01 1972-08-17 Semiconductor Research Foundation, Sendai, Miyagi (Japan) Laufzeitdiodenoszillator

Also Published As

Publication number Publication date
IT949966B (it) 1973-06-11
CA953431A (en) 1974-08-20
NL7103156A (de) 1972-09-12
FR2128768B1 (de) 1977-07-15
AU3967172A (en) 1973-09-13
CH539979A (de) 1973-07-31
US3808555A (en) 1974-04-30
GB1379274A (en) 1975-01-02
JPS5221873B1 (de) 1977-06-14
ATA188572A (de) 1979-06-15
SE374985B (de) 1975-03-24
DE2209783A1 (de) 1972-09-14
FR2128768A1 (de) 1972-10-20
AU469438B2 (en) 1973-09-13

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee
UEP Publication of translation of european patent specification