JP5014118B2 - フラッシュメモリを備える半導体装置の製造方およびフラッシュメモリを備える半導体装置 - Google Patents
フラッシュメモリを備える半導体装置の製造方およびフラッシュメモリを備える半導体装置 Download PDFInfo
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- JP5014118B2 JP5014118B2 JP2007504576A JP2007504576A JP5014118B2 JP 5014118 B2 JP5014118 B2 JP 5014118B2 JP 2007504576 A JP2007504576 A JP 2007504576A JP 2007504576 A JP2007504576 A JP 2007504576A JP 5014118 B2 JP5014118 B2 JP 5014118B2
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- film
- drain diffusion
- semiconductor substrate
- flash memory
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Description
Claims (8)
- ソース・ドレイン拡散領域を有する半導体基板と、
該半導体基板上に形成されたONO膜と、
該ONO膜上に形成された制御ゲートとを具備し、
前記制御ゲートの下であって、前記ソース・ドレイン拡散領域の間に位置する溝部が前記半導体基板表面に設けられ、
前記ONO膜は、トンネル酸化膜、トラップ層、およびトップ酸化膜を有しており、前記溝部内、前記溝部と前記ソース・ドレイン拡散領域との間の前記半導体基板上、および前記ソース・ドレイン拡散領域上において連続して延びるように形成されている、フラッシュメモリを備える半導体装置。 - 前記ソース・ドレイン拡散領域を前記溝部と自己整合的に形成した請求項1に記載のフラッシュメモリを備える半導体装置。
- 前記ソース・ドレイン拡散領域がビットラインと共通である、請求項1または2項に記載のフラッシュメモリを備える半導体装置。
- 半導体基板表面に溝部を形成する第1の工程と、
前記半導体基板内の前記溝部の両側にソース・ドレイン拡散領域を形成する第2の工程と、
前記溝部内、前記溝部と前記ソース・ドレイン拡散領域との間の前記半導体基板上、および前記ソース・ドレイン拡散領域上において、トンネル酸化膜、トラップ層、およびトップ酸化膜を有しているONO膜を連続して延びるように形成する工程と、
前記ONO膜上に制御ゲートを形成する工程とを備えた、フラッシュメモリを備える半導体装置の製造方法。 - 前記第1の工程が、
前記半導体基板表面を熱酸化させることにより熱酸化シリコン膜を形成する第3工程と、
前記熱酸化シリコン膜を除去する工程とを備えた、請求項4に記載のフラッシュメモリを備える半導体装置の製造方法。 - 前記第1の工程の前に、
前記半導体基板上に開口部を有する絶縁膜を形成する工程と、
前記開口部の側部に側壁を形成する工程とを備え、
前記第3の工程が、前記絶縁膜と前記側壁をマスクに、前記半導体基板表面を熱酸化させることにより熱酸化シリコン膜を形成する工程である、請求項5に記載のフラッシュメモリを備える半導体装置の製造方法。 - 前記第2の工程が、前記絶縁膜を除去する工程と、前記熱酸化シリコン膜および前記側壁をマスクにイオン注入し、前記ソース・ドレイン拡散領域を形成する工程とを含む、請求項6に記載のフラッシュメモリを備える半導体装置の製造方法。
- 前記絶縁膜が窒化シリコン膜であり、前記側壁が酸化シリコン膜である、請求項6または7項記載のフラッシュメモリを備える半導体装置の製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2005/002890 WO2006090441A1 (ja) | 2005-02-23 | 2005-02-23 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2006090441A1 JPWO2006090441A1 (ja) | 2008-08-07 |
JP5014118B2 true JP5014118B2 (ja) | 2012-08-29 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2007504576A Active JP5014118B2 (ja) | 2005-02-23 | 2005-02-23 | フラッシュメモリを備える半導体装置の製造方およびフラッシュメモリを備える半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7573091B2 (ja) |
JP (1) | JP5014118B2 (ja) |
WO (1) | WO2006090441A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
JPH07226513A (ja) * | 1994-01-28 | 1995-08-22 | Lg Semicon Co Ltd | Mosトランジスタの製造方法 |
JP2004111737A (ja) * | 2002-09-19 | 2004-04-08 | Fasl Japan Ltd | 半導体装置の製造方法 |
JP2004193178A (ja) * | 2002-12-06 | 2004-07-08 | Fasl Japan 株式会社 | 半導体記憶装置及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5376572A (en) * | 1994-05-06 | 1994-12-27 | United Microelectronics Corporation | Method of making an electrically erasable programmable memory device with improved erase and write operation |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6727161B2 (en) * | 2000-02-16 | 2004-04-27 | Cypress Semiconductor Corp. | Isolation technology for submicron semiconductor devices |
JP2004012573A (ja) | 2002-06-04 | 2004-01-15 | Fujikura Ltd | 平型光ファイバコード及びその製造方法 |
US6610586B1 (en) * | 2002-09-04 | 2003-08-26 | Macronix International Co., Ltd. | Method for fabricating nitride read-only memory |
TW200514256A (en) * | 2003-10-15 | 2005-04-16 | Powerchip Semiconductor Corp | Non-volatile memory device and method of manufacturing the same |
US7060551B2 (en) * | 2004-06-18 | 2006-06-13 | Macronix International Co., Ltd. | Method of fabricating read only memory and memory cell array |
-
2005
- 2005-02-23 JP JP2007504576A patent/JP5014118B2/ja active Active
- 2005-02-23 WO PCT/JP2005/002890 patent/WO2006090441A1/ja not_active Application Discontinuation
-
2006
- 2006-02-23 US US11/362,317 patent/US7573091B2/en active Active
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2009
- 2009-07-14 US US12/502,891 patent/US7977189B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0412573A (ja) * | 1990-05-02 | 1992-01-17 | Matsushita Electron Corp | 不揮発性半導体記憶装置およびその製造方法 |
JPH07226513A (ja) * | 1994-01-28 | 1995-08-22 | Lg Semicon Co Ltd | Mosトランジスタの製造方法 |
JP2004111737A (ja) * | 2002-09-19 | 2004-04-08 | Fasl Japan Ltd | 半導体装置の製造方法 |
JP2004193178A (ja) * | 2002-12-06 | 2004-07-08 | Fasl Japan 株式会社 | 半導体記憶装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20090325354A1 (en) | 2009-12-31 |
US7573091B2 (en) | 2009-08-11 |
JPWO2006090441A1 (ja) | 2008-08-07 |
US7977189B2 (en) | 2011-07-12 |
WO2006090441A1 (ja) | 2006-08-31 |
US20060240620A1 (en) | 2006-10-26 |
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