JP5010366B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP5010366B2 JP5010366B2 JP2007168191A JP2007168191A JP5010366B2 JP 5010366 B2 JP5010366 B2 JP 5010366B2 JP 2007168191 A JP2007168191 A JP 2007168191A JP 2007168191 A JP2007168191 A JP 2007168191A JP 5010366 B2 JP5010366 B2 JP 5010366B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- led chip
- substrate
- led
- emitting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 claims description 149
- 238000001514 detection method Methods 0.000 claims description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 239000010703 silicon Substances 0.000 claims description 40
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 description 38
- 239000002184 metal Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000010931 gold Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 15
- 238000000605 extraction Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000005304 joining Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910004166 TaN Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052726 zirconium Inorganic materials 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Led Device Packages (AREA)
Description
請求項3の発明は、請求項1または請求項2の発明において、前記実装基板は、3枚のシリコン基板を用いて形成されてなることを特徴とする。
この発明によれば、前記光検出部および前記温度検知部を前記実装基板中に容易に形成することが可能となり、低コスト化を図れる。
4 光検出素子(光検出部)
4b1 p形領域
4b2 n形領域
5 温度検出素子(温度検出部)
5c1 p形領域
5c2 n形領域
10 パッケージ
45 第1の遮光膜
46 第2の遮光膜
Claims (3)
- LEDチップと、LEDチップが収納されたパッケージとを備え、当該パッケージに、LEDチップから放射される光を検出する光検出部と、光検出部の温度を検出する温度検出部とが設けられ、光検出部が、フォトダイオードにより構成され、温度検出部が、前記フォトダイオードと同じダイオード構造を有し且つ当該ダイオード構造への光入射を阻止する遮光構造を有するダイオードにより構成されてなり、パッケージは、少なくとも、LEDチップが実装されるLED実装部およびLED実装部においてLEDチップが実装される領域の周部に設けられた壁部を有する実装基板を備え、実装基板は、壁部の先端部から内方へ突出する突出部を有するとともに、当該突出部におけるLED実装部との対向面側に光検出部および温度検出部が設けられてなることを特徴とする発光装置。
- 前記LEDチップを駆動する駆動回路部と、前記光検出部の出力から前記温度検出部の出力を減算した補正値が予め設定された目標値に保たれるように駆動回路部から前記LEDチップへ供給される電流を制御する制御回路部とが前記パッケージに集積化されてなることを特徴とする請求項1記載の発光装置。
- 前記実装基板は、3枚のシリコン基板を用いて形成されてなることを特徴とする請求項1または請求項2記載の発光装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007168191A JP5010366B2 (ja) | 2007-06-26 | 2007-06-26 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007168191A JP5010366B2 (ja) | 2007-06-26 | 2007-06-26 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009010044A JP2009010044A (ja) | 2009-01-15 |
JP5010366B2 true JP5010366B2 (ja) | 2012-08-29 |
Family
ID=40324874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007168191A Expired - Fee Related JP5010366B2 (ja) | 2007-06-26 | 2007-06-26 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5010366B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5034719B2 (ja) * | 2007-07-04 | 2012-09-26 | 日亜化学工業株式会社 | 半導体発光装置 |
JP5185683B2 (ja) | 2008-04-24 | 2013-04-17 | パナソニック株式会社 | Ledモジュールの製造方法および照明器具の製造方法 |
KR101230914B1 (ko) | 2011-09-23 | 2013-02-07 | 한국과학기술원 | 광측정소자를 내장한 발광 소자 패키지 |
KR101983776B1 (ko) * | 2012-10-26 | 2019-09-03 | 엘지이노텍 주식회사 | 발광소자 패키지 |
US9064773B2 (en) * | 2012-10-26 | 2015-06-23 | Lg Innotek Co., Ltd. | Light emitting device package |
JP6405368B2 (ja) | 2014-04-25 | 2018-10-17 | 浜松ホトニクス株式会社 | 光学式センサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5654627Y2 (ja) * | 1976-06-03 | 1981-12-19 | ||
JPS6376491A (ja) * | 1986-09-19 | 1988-04-06 | Nec Corp | 光出力制御回路 |
JPH0244218A (ja) * | 1988-08-04 | 1990-02-14 | Mitsubishi Electric Corp | 光検出回路 |
JPH03192780A (ja) * | 1989-12-22 | 1991-08-22 | Toshiba Corp | 安定化光源 |
JP2686036B2 (ja) * | 1993-07-09 | 1997-12-08 | 浜松ホトニクス株式会社 | アバランシェフォトダイオードのバイアス回路 |
-
2007
- 2007-06-26 JP JP2007168191A patent/JP5010366B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2009010044A (ja) | 2009-01-15 |
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