JP4993826B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4993826B2
JP4993826B2 JP2001245924A JP2001245924A JP4993826B2 JP 4993826 B2 JP4993826 B2 JP 4993826B2 JP 2001245924 A JP2001245924 A JP 2001245924A JP 2001245924 A JP2001245924 A JP 2001245924A JP 4993826 B2 JP4993826 B2 JP 4993826B2
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Japan
Prior art keywords
film
tft
insulating film
heat treatment
hydrogen
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Expired - Fee Related
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JP2001245924A
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English (en)
Japanese (ja)
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JP2002151524A (ja
JP2002151524A5 (enrdf_load_stackoverflow
Inventor
敦生 磯部
徹 高山
達也 荒尾
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001245924A priority Critical patent/JP4993826B2/ja
Publication of JP2002151524A publication Critical patent/JP2002151524A/ja
Publication of JP2002151524A5 publication Critical patent/JP2002151524A5/ja
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Publication of JP4993826B2 publication Critical patent/JP4993826B2/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
JP2001245924A 2000-08-14 2001-08-14 半導体装置の作製方法 Expired - Fee Related JP4993826B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001245924A JP4993826B2 (ja) 2000-08-14 2001-08-14 半導体装置の作製方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2000-246099 2000-08-14
JP2000246099 2000-08-14
JP2000246099 2000-08-14
JP2001245924A JP4993826B2 (ja) 2000-08-14 2001-08-14 半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011259980A Division JP5143272B2 (ja) 2000-08-14 2011-11-29 Ｅｌ表示装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002151524A JP2002151524A (ja) 2002-05-24
JP2002151524A5 JP2002151524A5 (enrdf_load_stackoverflow) 2008-07-31
JP4993826B2 true JP4993826B2 (ja) 2012-08-08

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Family Applications (1)

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JP2001245924A Expired - Fee Related JP4993826B2 (ja) 2000-08-14 2001-08-14 半導体装置の作製方法

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JP (1) JP4993826B2 (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004138958A (ja) 2002-10-21 2004-05-13 Semiconductor Energy Lab Co Ltd 表示装置
US20060072047A1 (en) * 2002-12-06 2006-04-06 Kanetaka Sekiguchi Liquid crystal display
US20070164280A1 (en) * 2003-08-28 2007-07-19 Shinji Maekawa Thin film transistor, manufacturing method for thin film transistor and manufacturing method for display device
CN100568457C (zh) 2003-10-02 2009-12-09 株式会社半导体能源研究所 半导体装置的制造方法
US20050170643A1 (en) 2004-01-29 2005-08-04 Semiconductor Energy Laboratory Co., Ltd. Forming method of contact hole, and manufacturing method of semiconductor device, liquid crystal display device and EL display device
US7416977B2 (en) 2004-04-28 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device, liquid crystal television, and EL television
JP5525224B2 (ja) 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
US8530897B2 (en) * 2008-12-11 2013-09-10 Semiconductor Energy Laboratory Co., Ltd. Display device including an inverter circuit having a microcrystalline layer
JP5533070B2 (ja) * 2010-03-16 2014-06-25 カシオ計算機株式会社 薄膜トランジスタ、発光装置及び薄膜トランジスタの製造方法
WO2012090799A1 (en) * 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2012209543A (ja) * 2011-03-11 2012-10-25 Semiconductor Energy Lab Co Ltd 半導体装置
JP6496666B2 (ja) 2013-12-03 2019-04-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9577110B2 (en) * 2013-12-27 2017-02-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
KR102354008B1 (ko) * 2014-05-29 2022-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기
CN113658921B (zh) * 2021-08-13 2023-10-17 长鑫存储技术有限公司 半导体结构的制造方法和半导体结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3515132B2 (ja) * 1991-06-20 2004-04-05 セイコーエプソン株式会社 薄膜トランジスタの製造方法
JPH0845867A (ja) * 1994-05-27 1996-02-16 Sanyo Electric Co Ltd 半導体装置の製造方法および表示装置
JPH08228005A (ja) * 1995-02-20 1996-09-03 Seiko Epson Corp 半導体装置、薄膜トランジスタ、相補型薄膜トランジスタ、液晶表示装置及びそれらの製造方法
JPH08316486A (ja) * 1995-05-17 1996-11-29 Sanyo Electric Co Ltd 薄膜半導体素子
JP2000068518A (ja) * 1998-08-26 2000-03-03 Sony Corp 薄膜トランジスタの製造方法

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JP2002151524A (ja) 2002-05-24

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