JP4991025B2 - 窒化物半導体レーザ素子 - Google Patents

窒化物半導体レーザ素子 Download PDF

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Publication number
JP4991025B2
JP4991025B2 JP2000099797A JP2000099797A JP4991025B2 JP 4991025 B2 JP4991025 B2 JP 4991025B2 JP 2000099797 A JP2000099797 A JP 2000099797A JP 2000099797 A JP2000099797 A JP 2000099797A JP 4991025 B2 JP4991025 B2 JP 4991025B2
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JP
Japan
Prior art keywords
layer
light guide
side light
nitride semiconductor
guide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2000099797A
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English (en)
Japanese (ja)
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JP2001057461A (ja
JP2001057461A5 (de
Inventor
徳也 小崎
雅彦 佐野
修二 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
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Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2000099797A priority Critical patent/JP4991025B2/ja
Publication of JP2001057461A publication Critical patent/JP2001057461A/ja
Publication of JP2001057461A5 publication Critical patent/JP2001057461A5/ja
Application granted granted Critical
Publication of JP4991025B2 publication Critical patent/JP4991025B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2000099797A 1999-06-10 2000-03-31 窒化物半導体レーザ素子 Expired - Lifetime JP4991025B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000099797A JP4991025B2 (ja) 1999-06-10 2000-03-31 窒化物半導体レーザ素子

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999163500 1999-06-10
JP16350099 1999-06-10
JP11-163500 1999-06-10
JP2000099797A JP4991025B2 (ja) 1999-06-10 2000-03-31 窒化物半導体レーザ素子

Publications (3)

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JP2001057461A JP2001057461A (ja) 2001-02-27
JP2001057461A5 JP2001057461A5 (de) 2007-05-24
JP4991025B2 true JP4991025B2 (ja) 2012-08-01

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Family Applications (1)

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JP2000099797A Expired - Lifetime JP4991025B2 (ja) 1999-06-10 2000-03-31 窒化物半導体レーザ素子

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JP (1) JP4991025B2 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002335048A (ja) * 2001-03-06 2002-11-22 Sony Corp 窒化物系半導体レーザ素子及びその製造方法
JP2003086898A (ja) 2001-09-07 2003-03-20 Nec Corp 窒化ガリウム系半導体レーザ
US7485902B2 (en) 2002-09-18 2009-02-03 Sanyo Electric Co., Ltd. Nitride-based semiconductor light-emitting device
JP3973523B2 (ja) 2002-09-20 2007-09-12 三洋電機株式会社 窒化物系半導体レーザ素子
JP4640752B2 (ja) * 2003-12-05 2011-03-02 シャープ株式会社 窒化ガリウム系半導体レーザ及びその製造方法
JP2006324279A (ja) * 2005-05-17 2006-11-30 Rohm Co Ltd 半導体素子
JP2007115877A (ja) * 2005-10-20 2007-05-10 Fujifilm Corp 固体レーザ装置
JP5771145B2 (ja) * 2009-07-31 2015-08-26 日亜化学工業株式会社 窒化物半導体レーザダイオード
JP2011035156A (ja) * 2009-07-31 2011-02-17 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子の製造方法
JP5204170B2 (ja) * 2010-08-25 2013-06-05 シャープ株式会社 窒化ガリウム系半導体レーザ及びその製造方法
JP7295371B2 (ja) 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
WO2023163230A1 (ja) * 2022-02-28 2023-08-31 旭化成株式会社 レーザダイオード

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743487A (en) * 1980-08-28 1982-03-11 Nec Corp Semiconductor laser
JP2778178B2 (ja) * 1990-01-31 1998-07-23 日本電気株式会社 半導体レーザ
JPH04186687A (ja) * 1990-11-17 1992-07-03 Seiko Epson Corp 半導体レーザ
JPH08330678A (ja) * 1995-03-27 1996-12-13 Mitsubishi Cable Ind Ltd 半導体レーザ
JP3441329B2 (ja) * 1996-02-26 2003-09-02 株式会社東芝 窒化ガリウム系半導体素子
JP3336599B2 (ja) * 1996-03-11 2002-10-21 日亜化学工業株式会社 窒化物半導体レーザ素子
JP3431389B2 (ja) * 1996-03-25 2003-07-28 日亜化学工業株式会社 窒化物半導体レーザ素子
EP0847117B1 (de) * 1996-06-24 2004-04-07 Matsushita Electric Industrial Co., Ltd. Halbleiterlaser
JP3897186B2 (ja) * 1997-03-27 2007-03-22 シャープ株式会社 化合物半導体レーザ
JP3278108B2 (ja) * 1997-06-11 2002-04-30 日亜化学工業株式会社 窒化物半導体レーザ素の製造方法
JP3822318B2 (ja) * 1997-07-17 2006-09-20 株式会社東芝 半導体発光素子及びその製造方法

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