JP4985533B2 - 半絶縁性窒化物半導体基板の製造方法 - Google Patents

半絶縁性窒化物半導体基板の製造方法 Download PDF

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Publication number
JP4985533B2
JP4985533B2 JP2008113287A JP2008113287A JP4985533B2 JP 4985533 B2 JP4985533 B2 JP 4985533B2 JP 2008113287 A JP2008113287 A JP 2008113287A JP 2008113287 A JP2008113287 A JP 2008113287A JP 4985533 B2 JP4985533 B2 JP 4985533B2
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substrate
type
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crystal
kpa
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JP2008113287A
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Japanese (ja)
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JP2009120465A (ja
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史隆 佐藤
成二 中畑
誠 木山
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Priority to JP2008113287A priority Critical patent/JP4985533B2/ja
Priority to CA002641016A priority patent/CA2641016A1/en
Priority to TW97140054A priority patent/TW200937499A/zh
Priority to EP08018393A priority patent/EP2055811A2/en
Priority to KR1020080102984A priority patent/KR20090042164A/ko
Priority to US12/257,096 priority patent/US20090108297A1/en
Priority to RU2008142153/28A priority patent/RU2008142153A/ru
Publication of JP2009120465A publication Critical patent/JP2009120465A/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Recrystallisation Techniques (AREA)
JP2008113287A 2007-10-24 2008-04-24 半絶縁性窒化物半導体基板の製造方法 Expired - Fee Related JP4985533B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008113287A JP4985533B2 (ja) 2007-10-24 2008-04-24 半絶縁性窒化物半導体基板の製造方法
CA002641016A CA2641016A1 (en) 2007-10-24 2008-10-14 Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
TW97140054A TW200937499A (en) 2007-10-24 2008-10-17 Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
KR1020080102984A KR20090042164A (ko) 2007-10-24 2008-10-21 반절연성 질화물 반도체 기판과 그 제조 방법, 질화물 반도체 에피택셜 기판 및 전계 효과 트랜지스터
EP08018393A EP2055811A2 (en) 2007-10-24 2008-10-21 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor
US12/257,096 US20090108297A1 (en) 2007-10-24 2008-10-23 Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor
RU2008142153/28A RU2008142153A (ru) 2007-10-24 2008-10-23 Полуизолирующая нитридная полупроводниковая подложка и способ ее производства, нитридная полупроводниковая эпитаксиальная подложка и полевой транзистор

Applications Claiming Priority (3)

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JP2007275889 2007-10-24
JP2007275889 2007-10-24
JP2008113287A JP4985533B2 (ja) 2007-10-24 2008-04-24 半絶縁性窒化物半導体基板の製造方法

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JP2009120465A JP2009120465A (ja) 2009-06-04
JP4985533B2 true JP4985533B2 (ja) 2012-07-25

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JP2008113287A Expired - Fee Related JP4985533B2 (ja) 2007-10-24 2008-04-24 半絶縁性窒化物半導体基板の製造方法

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JP (1) JP4985533B2 (zh)
CN (1) CN101441999A (zh)
RU (1) RU2008142153A (zh)
TW (1) TW200937499A (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011001830A1 (ja) * 2009-06-30 2011-01-06 日本碍子株式会社 Iii族金属窒化物単結晶の製造方法
JP2012074544A (ja) * 2010-09-29 2012-04-12 Ngk Insulators Ltd 半導体素子および半導体素子の作製方法
JP5559669B2 (ja) * 2010-12-09 2014-07-23 日本碍子株式会社 Ｉｉｉ族窒化物単結晶の製造方法およびこれに用いる種結晶基板
JP5333479B2 (ja) 2011-02-15 2013-11-06 住友電気工業株式会社 半導体デバイスの製造方法
JP2013206976A (ja) 2012-03-27 2013-10-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2015070085A (ja) * 2013-09-27 2015-04-13 Ｄｏｗａエレクトロニクス株式会社 電子デバイス用エピタキシャル基板およびその製造方法
WO2016136552A1 (ja) * 2015-02-23 2016-09-01 三菱化学株式会社 Ｃ面ＧａＮ基板
CN113454272B (zh) * 2019-02-22 2024-03-08 三菱化学株式会社 GaN结晶和基板
JP7469051B2 (ja) 2020-01-15 2024-04-16 住友化学株式会社 窒化物結晶基板の製造方法、窒化物結晶基板および積層構造体
US11888054B2 (en) 2020-12-18 2024-01-30 Innoscience (Suzhou) Technology Co., Ltd. Semiconductor device and method for manufacturing the same
CN113130644B (zh) * 2020-12-18 2023-03-24 英诺赛科(苏州)科技有限公司 半导体器件以及制造半导体器件的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3801125B2 (ja) * 2001-10-09 2006-07-26 住友電気工業株式会社 単結晶窒化ガリウム基板と単結晶窒化ガリウムの結晶成長方法および単結晶窒化ガリウム基板の製造方法
JP4117156B2 (ja) * 2002-07-02 2008-07-16 日本電気株式会社 Ｉｉｉ族窒化物半導体基板の製造方法
JP4720125B2 (ja) * 2004-08-10 2011-07-13 日立電線株式会社 Ｉｉｉ−ｖ族窒化物系半導体基板及びその製造方法並びにｉｉｉ−ｖ族窒化物系半導体
JP5260831B2 (ja) * 2006-01-05 2013-08-14 古河機械金属株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法、ｉｉｉ族窒化物半導体基板の製造方法および半導体装置の製造方法
JP2007191321A (ja) * 2006-01-17 2007-08-02 Sumitomo Electric Ind Ltd 窒化物基板の製造方法と窒化物基板及び窒化物系半導体デバイス

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CN101441999A (zh) 2009-05-27
JP2009120465A (ja) 2009-06-04
RU2008142153A (ru) 2010-04-27
TW200937499A (en) 2009-09-01

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