JP4981046B2 - プラズマ成膜装置及び膜の製造法 - Google Patents
プラズマ成膜装置及び膜の製造法 Download PDFInfo
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- JP4981046B2 JP4981046B2 JP2008523714A JP2008523714A JP4981046B2 JP 4981046 B2 JP4981046 B2 JP 4981046B2 JP 2008523714 A JP2008523714 A JP 2008523714A JP 2008523714 A JP2008523714 A JP 2008523714A JP 4981046 B2 JP4981046 B2 JP 4981046B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000463 material Substances 0.000 claims description 60
- 238000001704 evaporation Methods 0.000 claims description 59
- 230000008020 evaporation Effects 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 25
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 74
- 230000015572 biosynthetic process Effects 0.000 description 16
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 8
- 239000000395 magnesium oxide Substances 0.000 description 8
- 229910052772 Samarium Inorganic materials 0.000 description 6
- 229910017052 cobalt Inorganic materials 0.000 description 6
- 239000010941 cobalt Substances 0.000 description 6
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 6
- 238000007733 ion plating Methods 0.000 description 6
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910001172 neodymium magnet Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
前記プラズマガンから照射されたプラズマビームに磁界を適用して、該プラズマビームのビーム断面を変形させる磁石と、
前記ビーム断面が変形されたプラズマビームを偏向させて、該偏向させたプラズマビームを被照射体に照射させる引き込みマグネットユニットと、を備え、
前記引き込みマグネットユニットには、前記被照射体の裏面側に配置される第1マグネットと、前記第1マグネットと同じ磁極の第2マグネットと、が互いに離間した状態で、前記プラズマビームの照射方向に沿って並置されており、前記引き込みマグネットユニットを構成する前記第1マグネットおよび前記第2マグネットのうち、前記第1マグネットは前記プラズマガンに対して最も近く配置されており、前記第2マグネットは前記プラズマガンに対して最も遠く配置されており、前記第2マグネットが、最も強い磁界を発生させることを特徴とする。
真空排気可能な成膜室内に配置されている蒸発材料受け皿に収容されている被照射体である蒸発材料に対して、請求項1に記載のプラズマ成膜装置で生成されたプラズマを入射して蒸発材料を蒸発させ、
前記成膜室内で前記蒸発材料受け皿に対して所定の間隔を空けて、前記蒸発材料受け皿に対向する位置に配置されている前記基板に成膜することを特徴とする。
・ 放電電力・・・0.16Pa
・ Ar流量・・・11sccm
・ 電力 ・・・26.1Kw
・ 集束コイル電流・・・45A
本発明の実施形態に係る成膜装置で上記成膜条件で、基板39上に酸化マグネシウムの成膜を行った後、蒸発材料受け皿32に形成されたプラズマビーム28の照射痕(照射面積)を測定した。
Claims (8)
- プラズマビームを照射するプラズマガンを有するプラズマ成膜装置において、
前記プラズマガンから照射されたプラズマビームに磁界を適用して、該プラズマビームのビーム断面を変形させる磁石と、
前記磁石によって前記ビーム断面が変形されたプラズマビームを偏向させて、該偏向させたプラズマビームを被照射体に照射させる引き込みマグネットユニットと、を備え、
前記引き込みマグネットユニットには、前記被照射体の裏面側に配置される第1マグネットと、前記第1マグネットと同じ磁極の第2マグネットと、が互いに離間した状態で、前記プラズマビームの照射方向に沿って並置されており、前記引き込みマグネットユニットを構成する前記第1マグネットおよび前記第2マグネットのうち、前記第1マグネットは前記プラズマガンに対して最も近く配置されており、前記第2マグネットは前記プラズマガンに対して最も遠く配置されており、前記第2マグネットが、最も強い磁界を発生させることを特徴とするプラズマ成膜装置。 - 前記第1マグネットと前記第2マグネットとは、ヨークを介して並置されることを特徴とする請求項1に記載のプラズマ成膜装置。
- 前記第1マグネット及び前記第2マグネットは、前記被照射体の裏面側に配置されている、前記第1マグネット及び前記第2マグネットとは異なる磁極の第3マグネットを介して並置されることを特徴とする請求項1に記載のプラズマ成膜装置。
- 前記第1マグネット、前記第2マグネット及び前記第3マグネットは四角柱の形状を有することを特徴とする請求項3に記載のプラズマ成膜装置。
- 基板に成膜するための膜の製造法であって、
真空排気が可能な成膜室内に配置されている蒸発材料受け皿に収容されている被照射体である蒸発材料に対して、請求項1に記載のプラズマ成膜装置で生成されたプラズマを照射して前記蒸発材料を蒸発させ、
前記成膜室内で前記蒸発材料受け皿に対して所定の間隔を設けて、前記蒸発材料受け皿に対向する位置に配置されている基板に成膜する
ことを特徴とする膜の製造法。 - 前記プラズマガンから最も離れた位置に配置されたマグネットの体積を、当該プラズマガンに最も近い位置に配置されたマグネットの体積よりも大きくすることにより、前記第1マグネットまたは前記第2マグネットのうち、前記プラズマガンから最も離れた位置に配置されたマグネットに、最も強い磁界を発生させることを特徴とする請求項1、請求項2、請求項3の何れか1項に記載のプラズマ成膜装置。
- 前記プラズマガンから最も離れた位置に配置されたマグネットの先端面を、当該プラズマガンに最も近い位置に配置されたマグネットの先端面より、前記被照射体に近づけた状態で配置することにより、前記第1マグネットまたは前記第2マグネットのうち、前記プラズマガンから最も離れた位置に配置されたマグネットに、最も強い磁界を発生させることを特徴とする請求項1、請求項2、請求項3の何れか1項に記載のプラズマ成膜装置。
- 前記第1マグネットおよび前記第2マグネットは、いずれも、前記被照射体の裏面側がS極となるように配置されていることを特徴とする請求項1に記載のプラズマ成膜装置。
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JP2008523714A JP4981046B2 (ja) | 2006-07-07 | 2007-07-04 | プラズマ成膜装置及び膜の製造法 |
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JP2006188521 | 2006-07-07 | ||
JP2006188521 | 2006-07-07 | ||
JP2008523714A JP4981046B2 (ja) | 2006-07-07 | 2007-07-04 | プラズマ成膜装置及び膜の製造法 |
PCT/JP2007/063390 WO2008004593A1 (fr) | 2006-07-07 | 2007-07-04 | Système de déposition de film par plasma et procédé de fabrication du film |
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JP4981046B2 true JP4981046B2 (ja) | 2012-07-18 |
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US (1) | US20090294281A1 (ja) |
JP (1) | JP4981046B2 (ja) |
KR (1) | KR101043166B1 (ja) |
CN (1) | CN101490304B (ja) |
TW (1) | TW200823307A (ja) |
WO (1) | WO2008004593A1 (ja) |
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WO2008136130A1 (ja) * | 2007-04-24 | 2008-11-13 | Canon Anelva Corporation | プラズマ発生装置およびこれを用いた成膜方法並びに成膜装置 |
WO2009069743A1 (ja) * | 2007-11-30 | 2009-06-04 | Canon Anelva Corporation | 基板処理装置、及び基板処理方法 |
JP5580004B2 (ja) * | 2008-07-14 | 2014-08-27 | キヤノンアネルバ株式会社 | 真空容器、および真空処理装置 |
JP2010168648A (ja) * | 2008-12-25 | 2010-08-05 | Canon Anelva Corp | 成膜装置及び基板の製造方法 |
JP5421438B1 (ja) * | 2012-08-15 | 2014-02-19 | 中外炉工業株式会社 | プラズマ処理装置 |
CN116334536B (zh) * | 2023-03-29 | 2024-07-26 | 东北大学 | 一种高韧性过渡族金属氮化物TiAl(Ni)NX硬质涂层及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH073442A (ja) * | 1993-06-16 | 1995-01-06 | Asahi Glass Co Ltd | 蒸着装置 |
JP2006131932A (ja) * | 2004-11-04 | 2006-05-25 | Dainippon Printing Co Ltd | 圧力勾配型イオンプレーティング式成膜装置および成膜方法 |
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JP2657206B2 (ja) * | 1994-02-24 | 1997-09-24 | 株式会社ジーティシー | 透明導電膜の形成方法 |
CN2256886Y (zh) * | 1996-02-02 | 1997-06-25 | 吉林大学 | 磁控弧光放电离子镀装置 |
JP4219566B2 (ja) * | 2001-03-30 | 2009-02-04 | 株式会社神戸製鋼所 | スパッタ装置 |
JP4416632B2 (ja) * | 2004-12-03 | 2010-02-17 | キヤノン株式会社 | ガスクラスターイオンビーム照射装置およびガスクラスターのイオン化方法 |
JP2007277708A (ja) * | 2006-03-17 | 2007-10-25 | Canon Inc | 成膜装置および成膜方法 |
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2007
- 2007-07-04 US US12/307,659 patent/US20090294281A1/en not_active Abandoned
- 2007-07-04 KR KR1020097002473A patent/KR101043166B1/ko active IP Right Grant
- 2007-07-04 WO PCT/JP2007/063390 patent/WO2008004593A1/ja active Search and Examination
- 2007-07-04 JP JP2008523714A patent/JP4981046B2/ja active Active
- 2007-07-04 CN CN2007800257540A patent/CN101490304B/zh active Active
- 2007-07-06 TW TW096124737A patent/TW200823307A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH073442A (ja) * | 1993-06-16 | 1995-01-06 | Asahi Glass Co Ltd | 蒸着装置 |
JP2006131932A (ja) * | 2004-11-04 | 2006-05-25 | Dainippon Printing Co Ltd | 圧力勾配型イオンプレーティング式成膜装置および成膜方法 |
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Publication number | Publication date |
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TW200823307A (en) | 2008-06-01 |
KR101043166B1 (ko) | 2011-06-20 |
TWI369408B (ja) | 2012-08-01 |
JPWO2008004593A1 (ja) | 2009-12-03 |
WO2008004593A1 (fr) | 2008-01-10 |
KR20090031608A (ko) | 2009-03-26 |
CN101490304A (zh) | 2009-07-22 |
US20090294281A1 (en) | 2009-12-03 |
CN101490304B (zh) | 2011-06-15 |
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