JP4980235B2 - 金属カルボニル前駆体からの金属層の成膜速度を上げる方法 - Google Patents

金属カルボニル前駆体からの金属層の成膜速度を上げる方法 Download PDF

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JP4980235B2
JP4980235B2 JP2007543038A JP2007543038A JP4980235B2 JP 4980235 B2 JP4980235 B2 JP 4980235B2 JP 2007543038 A JP2007543038 A JP 2007543038A JP 2007543038 A JP2007543038 A JP 2007543038A JP 4980235 B2 JP4980235 B2 JP 4980235B2
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precursor
gas
substrate
metal
metal carbonyl
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Expired - Lifetime
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Japanese (ja)
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JP2008520835A5 (enExample
JP2008520835A (ja
Inventor
健二 鈴木
ギドッティ，エマニュエル，ピー
リューシンク，ヘリット，イェー
マクフェリー，フェントン，アール
マルホトラ，サンドラ，ジー
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
    • H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007543038A 2004-11-23 2005-10-03 金属カルボニル前駆体からの金属層の成膜速度を上げる方法 Expired - Lifetime JP4980235B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/996,145 2004-11-23
US10/996,145 US7270848B2 (en) 2004-11-23 2004-11-23 Method for increasing deposition rates of metal layers from metal-carbonyl precursors
PCT/US2005/035582 WO2006057709A2 (en) 2004-11-23 2005-10-03 Method for deposition of metal layers from metal carbonyl precursors

Publications (3)

Publication Number Publication Date
JP2008520835A JP2008520835A (ja) 2008-06-19
JP2008520835A5 JP2008520835A5 (enExample) 2008-11-20
JP4980235B2 true JP4980235B2 (ja) 2012-07-18

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JP2007543038A Expired - Lifetime JP4980235B2 (ja) 2004-11-23 2005-10-03 金属カルボニル前駆体からの金属層の成膜速度を上げる方法

Country Status (8)

Country Link
US (2) US7270848B2 (enExample)
EP (1) EP1828430B1 (enExample)
JP (1) JP4980235B2 (enExample)
KR (1) KR101178984B1 (enExample)
CN (1) CN100572591C (enExample)
AT (1) ATE519870T1 (enExample)
TW (1) TWI300098B (enExample)
WO (1) WO2006057709A2 (enExample)

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US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
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Also Published As

Publication number Publication date
TWI300098B (en) 2008-08-21
EP1828430B1 (en) 2011-08-10
ATE519870T1 (de) 2011-08-15
KR101178984B1 (ko) 2012-08-31
EP1828430A2 (en) 2007-09-05
KR20070083871A (ko) 2007-08-24
US7678421B2 (en) 2010-03-16
CN100572591C (zh) 2009-12-23
WO2006057709A8 (en) 2007-05-31
TW200628629A (en) 2006-08-16
US20080003360A1 (en) 2008-01-03
US7270848B2 (en) 2007-09-18
JP2008520835A (ja) 2008-06-19
WO2006057709A2 (en) 2006-06-01
CN101124352A (zh) 2008-02-13
WO2006057709A3 (en) 2006-09-28
US20060110530A1 (en) 2006-05-25

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