JP2008520835A5 - - Google Patents

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Publication number
JP2008520835A5
JP2008520835A5 JP2007543038A JP2007543038A JP2008520835A5 JP 2008520835 A5 JP2008520835 A5 JP 2008520835A5 JP 2007543038 A JP2007543038 A JP 2007543038A JP 2007543038 A JP2007543038 A JP 2007543038A JP 2008520835 A5 JP2008520835 A5 JP 2008520835A5
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JP
Japan
Prior art keywords
precursor
gas
substrate
carbon monoxide
process chamber
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JP2007543038A
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English (en)
Japanese (ja)
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JP4980235B2 (ja
JP2008520835A (ja
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Priority claimed from US10/996,145 external-priority patent/US7270848B2/en
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Publication of JP2008520835A publication Critical patent/JP2008520835A/ja
Publication of JP2008520835A5 publication Critical patent/JP2008520835A5/ja
Application granted granted Critical
Publication of JP4980235B2 publication Critical patent/JP4980235B2/ja
Anticipated expiration legal-status Critical
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JP2007543038A 2004-11-23 2005-10-03 金属カルボニル前駆体からの金属層の成膜速度を上げる方法 Expired - Lifetime JP4980235B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/996,145 2004-11-23
US10/996,145 US7270848B2 (en) 2004-11-23 2004-11-23 Method for increasing deposition rates of metal layers from metal-carbonyl precursors
PCT/US2005/035582 WO2006057709A2 (en) 2004-11-23 2005-10-03 Method for deposition of metal layers from metal carbonyl precursors

Publications (3)

Publication Number Publication Date
JP2008520835A JP2008520835A (ja) 2008-06-19
JP2008520835A5 true JP2008520835A5 (enExample) 2008-11-20
JP4980235B2 JP4980235B2 (ja) 2012-07-18

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JP2007543038A Expired - Lifetime JP4980235B2 (ja) 2004-11-23 2005-10-03 金属カルボニル前駆体からの金属層の成膜速度を上げる方法

Country Status (8)

Country Link
US (2) US7270848B2 (enExample)
EP (1) EP1828430B1 (enExample)
JP (1) JP4980235B2 (enExample)
KR (1) KR101178984B1 (enExample)
CN (1) CN100572591C (enExample)
AT (1) ATE519870T1 (enExample)
TW (1) TWI300098B (enExample)
WO (1) WO2006057709A2 (enExample)

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US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
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US8076241B2 (en) * 2009-09-30 2011-12-13 Tokyo Electron Limited Methods for multi-step copper plating on a continuous ruthenium film in recessed features
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