JP4976670B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4976670B2
JP4976670B2 JP2005242033A JP2005242033A JP4976670B2 JP 4976670 B2 JP4976670 B2 JP 4976670B2 JP 2005242033 A JP2005242033 A JP 2005242033A JP 2005242033 A JP2005242033 A JP 2005242033A JP 4976670 B2 JP4976670 B2 JP 4976670B2
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JP
Japan
Prior art keywords
optical system
reticle
optical
illumination
exposure apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005242033A
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English (en)
Japanese (ja)
Other versions
JP2007059566A5 (enExample
JP2007059566A (ja
Inventor
綾子 上遠野
春名 川島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2005242033A priority Critical patent/JP4976670B2/ja
Priority to US11/463,657 priority patent/US7525656B2/en
Publication of JP2007059566A publication Critical patent/JP2007059566A/ja
Publication of JP2007059566A5 publication Critical patent/JP2007059566A5/ja
Application granted granted Critical
Publication of JP4976670B2 publication Critical patent/JP4976670B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J4/00—Measuring polarisation of light
    • G01J4/04—Polarimeters using electric detection means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2005242033A 2005-08-24 2005-08-24 露光装置及びデバイス製造方法 Expired - Fee Related JP4976670B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2005242033A JP4976670B2 (ja) 2005-08-24 2005-08-24 露光装置及びデバイス製造方法
US11/463,657 US7525656B2 (en) 2005-08-24 2006-08-10 Exposure apparatus and device fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005242033A JP4976670B2 (ja) 2005-08-24 2005-08-24 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2007059566A JP2007059566A (ja) 2007-03-08
JP2007059566A5 JP2007059566A5 (enExample) 2008-10-09
JP4976670B2 true JP4976670B2 (ja) 2012-07-18

Family

ID=37803600

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005242033A Expired - Fee Related JP4976670B2 (ja) 2005-08-24 2005-08-24 露光装置及びデバイス製造方法

Country Status (2)

Country Link
US (1) US7525656B2 (enExample)
JP (1) JP4976670B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006078843A1 (en) * 2005-01-19 2006-07-27 Litel Instruments Method and apparatus for determination of source polarization matrix
JP2008108851A (ja) * 2006-10-24 2008-05-08 Canon Inc 照明装置及び当該照明装置を有する露光装置、並びに、デバイス製造方法
JP2009033045A (ja) 2007-07-30 2009-02-12 Canon Inc 調整方法、露光方法、デバイス製造方法及び露光装置
JP2009099629A (ja) * 2007-10-12 2009-05-07 Nikon Corp 照明光学装置、露光方法及び装置、並びに電子デバイスの製造方法
JP5033015B2 (ja) * 2008-02-15 2012-09-26 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
TW200938957A (en) * 2008-03-05 2009-09-16 Nanya Technology Corp Feedback system and feedback method for controlling power ratio of light source
DE102009015393B3 (de) * 2009-03-20 2010-09-02 Carl Zeiss Smt Ag Messverfahren und Messsystem zur Messung der Doppelbrechung
JP2011014660A (ja) * 2009-06-30 2011-01-20 Canon Inc 偏光状態の計測装置、露光装置及びデバイス製造方法
JP2011014707A (ja) * 2009-07-01 2011-01-20 Canon Inc 露光装置およびデバイス製造方法
JP6897092B2 (ja) * 2016-12-22 2021-06-30 カシオ計算機株式会社 投影制御装置、投影制御方法及びプログラム

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196131A (en) * 1981-05-27 1982-12-02 Olympus Optical Co Ltd Measuring method for wave front aberration
GB8701521D0 (en) * 1987-01-23 1993-12-01 British Aerospace Multi-parameter imaging polarimeter
JPH01115236U (enExample) * 1988-01-29 1989-08-03
JPH03231420A (ja) * 1990-02-06 1991-10-15 Nikon Corp 投影光学装置
JPH03288976A (ja) 1990-04-05 1991-12-19 Matsushita Electric Ind Co Ltd 点広がり関数決定装置
JP3288976B2 (ja) 1998-08-07 2002-06-04 彰二郎 川上 偏光子とその作製方法
JP2003043223A (ja) * 2001-07-30 2003-02-13 Nikon Corp 結晶材料で形成されたビームスプリッターおよび波長板、並びにこれらの結晶光学部品を備えた光学装置、露光装置並びに検査装置
JP2004061515A (ja) * 2002-07-29 2004-02-26 Cark Zeiss Smt Ag 光学系による偏光状態への影響を決定する方法及び装置と、分析装置
TWI379344B (en) * 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
KR101193830B1 (ko) * 2004-08-09 2012-10-23 가부시키가이샤 니콘 광학 특성 계측 장치 및 광학 특성 계측 방법, 노광 장치및 노광 방법, 그리고 디바이스 제조 방법
JP4580797B2 (ja) * 2005-03-28 2010-11-17 株式会社東芝 偏光状態検査方法及び半導体装置の製造方法
CN101253452A (zh) * 2005-06-13 2008-08-27 Asml荷兰有限公司 主动式掩模版工具、光刻设备和在光刻工具中对器件图案化的方法
WO2006133906A1 (en) * 2005-06-13 2006-12-21 Asml Netherlands B.V. Lithographic projection system and projection lens polarization sensor

Also Published As

Publication number Publication date
JP2007059566A (ja) 2007-03-08
US20070046922A1 (en) 2007-03-01
US7525656B2 (en) 2009-04-28

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