JP4974544B2 - 抵抗用合金材料、抵抗器および抵抗器の製造方法 - Google Patents
抵抗用合金材料、抵抗器および抵抗器の製造方法 Download PDFInfo
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- JP4974544B2 JP4974544B2 JP2006046307A JP2006046307A JP4974544B2 JP 4974544 B2 JP4974544 B2 JP 4974544B2 JP 2006046307 A JP2006046307 A JP 2006046307A JP 2006046307 A JP2006046307 A JP 2006046307A JP 4974544 B2 JP4974544 B2 JP 4974544B2
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- resistor
- aluminum
- copper
- manganese
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- 239000000956 alloy Substances 0.000 title claims description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 title description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 39
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 39
- 239000010949 copper Substances 0.000 claims description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 31
- 229910052802 copper Inorganic materials 0.000 claims description 31
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 23
- 229910052718 tin Inorganic materials 0.000 claims description 23
- 239000011572 manganese Substances 0.000 claims description 22
- 229910052748 manganese Inorganic materials 0.000 claims description 21
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 20
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 claims 2
- 239000000463 material Substances 0.000 description 17
- 229910045601 alloy Inorganic materials 0.000 description 10
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005482 strain hardening Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910000914 Mn alloy Inorganic materials 0.000 description 3
- 238000005097 cold rolling Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- ODWXUNBKCRECNW-UHFFFAOYSA-M bromocopper(1+) Chemical compound Br[Cu+] ODWXUNBKCRECNW-UHFFFAOYSA-M 0.000 description 2
- 239000013590 bulk material Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
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- Apparatuses And Processes For Manufacturing Resistors (AREA)
Description
2 電極
3 絶縁層
Claims (7)
- マンガンが6wt%から12wt%、アルミニウムが1wt%から3wt%、錫が2wt%から3wt%、および残部が銅であることを特徴とする抵抗用合金材料。
- 抵抗体と、該抵抗体に形成された電極と、からなる抵抗器であって、
前記抵抗体は、マンガンが6wt%から12wt%、アルミニウムが1wt%から3wt%、錫が2wt%から3wt%、および残部が銅である抵抗用合金材料からなることを特徴とする抵抗器。 - 前記抵抗体の表面に、アルミニウムもしくは錫の酸化膜を有する請求項2に記載の抵抗器。
- 前記抵抗体と前記電極とは、クラッド加工または溶接加工により接合されている請求項2または請求項3に記載の抵抗器。
- マンガンが6wt%から12wt%、アルミニウムが1wt%から3wt%、錫が2wt%から3wt%、および残部が銅である抵抗用合金材料からなる抵抗体に、金属材料からなる電極を形成する工程と、
熱処理により前記抵抗体の表面にアルミニウムもしくは錫の酸化膜を形成する工程と、からなる抵抗器の製造方法。 - 前記抵抗体と前記電極とは、クラッド加工または溶接加工により接合する請求項5に記載の抵抗器の製造方法。
- 前記酸化膜を形成する工程の前に、前記抵抗体を加工して抵抗値の調整を行うことを特徴とする請求項5または請求項6に記載の抵抗器の製造方法。
Priority Applications (1)
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JP2006046307A JP4974544B2 (ja) | 2005-02-25 | 2006-02-23 | 抵抗用合金材料、抵抗器および抵抗器の製造方法 |
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JP2005050177 | 2005-02-25 | ||
JP2005050177 | 2005-02-25 | ||
JP2006046307A JP4974544B2 (ja) | 2005-02-25 | 2006-02-23 | 抵抗用合金材料、抵抗器および抵抗器の製造方法 |
Publications (2)
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JP2006270078A JP2006270078A (ja) | 2006-10-05 |
JP4974544B2 true JP4974544B2 (ja) | 2012-07-11 |
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Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4906100B2 (ja) * | 2007-05-09 | 2012-03-28 | コーア株式会社 | 電流検出用抵抗器を有する回路基板 |
JP2013055130A (ja) * | 2011-09-01 | 2013-03-21 | Rohm Co Ltd | ジャンパー抵抗器 |
DE102013010301A1 (de) * | 2013-06-19 | 2014-12-24 | Isabellenhütte Heusler Gmbh & Co. Kg | Widerstandslegierung, daraus hergestelltes Bauelement und Herstellungsverfahren dafür |
JP6471494B2 (ja) * | 2014-09-29 | 2019-02-20 | 日立金属株式会社 | Cu合金材およびその製造方法 |
WO2016111109A1 (ja) * | 2015-01-08 | 2016-07-14 | 株式会社日立金属ネオマテリアル | 抵抗材料 |
JP2017157767A (ja) * | 2016-03-04 | 2017-09-07 | パナソニックIpマネジメント株式会社 | チップ抵抗器 |
KR20180047411A (ko) * | 2016-10-31 | 2018-05-10 | 삼성전기주식회사 | 저항 소자 및 저항 소자 어셈블리 |
KR101994751B1 (ko) * | 2016-11-04 | 2019-07-01 | 삼성전기주식회사 | 칩 저항기 |
KR102463644B1 (ko) * | 2017-01-10 | 2022-11-07 | 후루카와 덴키 고교 가부시키가이샤 | 저항재용 구리 합금 재료 및 그 제조 방법, 및 저항기 |
WO2020196791A1 (ja) | 2019-03-28 | 2020-10-01 | 古河電気工業株式会社 | 銅合金条材およびその製造方法、それを用いた抵抗器用抵抗材料ならびに抵抗器 |
JP7444573B2 (ja) | 2019-09-25 | 2024-03-06 | Koa株式会社 | 抵抗体材料、抵抗体材料の製造方法及び電流検出用抵抗器 |
JP2022149653A (ja) * | 2021-03-25 | 2022-10-07 | Koa株式会社 | 抵抗器及び抵抗器の製造方法 |
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AU2003289337A1 (en) * | 2002-12-16 | 2004-07-09 | Koa Kabushiki Kaisha | Resistive material, resistive element, resistor and method for manufacturing resistor |
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