JP4954359B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4954359B2
JP4954359B2 JP2000033877A JP2000033877A JP4954359B2 JP 4954359 B2 JP4954359 B2 JP 4954359B2 JP 2000033877 A JP2000033877 A JP 2000033877A JP 2000033877 A JP2000033877 A JP 2000033877A JP 4954359 B2 JP4954359 B2 JP 4954359B2
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Japan
Prior art keywords
film
laser
excimer laser
substrate
silicon film
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Expired - Fee Related
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JP2000033877A
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English (en)
Japanese (ja)
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JP2000306834A (ja
JP2000306834A5 (enExample
Inventor
舜平 山崎
幸一郎 田中
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2000033877A priority Critical patent/JP4954359B2/ja
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Publication of JP2000306834A5 publication Critical patent/JP2000306834A5/ja
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  • Recrystallisation Techniques (AREA)
JP2000033877A 1999-02-12 2000-02-10 半導体装置の作製方法 Expired - Fee Related JP4954359B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000033877A JP4954359B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP1999035019 1999-02-12
JP3501999 1999-02-12
JP3978799 1999-02-18
JP11-39787 1999-02-18
JP11-35019 1999-02-18
JP1999039787 1999-02-18
JP2000033877A JP4954359B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

Publications (3)

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JP2000306834A JP2000306834A (ja) 2000-11-02
JP2000306834A5 JP2000306834A5 (enExample) 2007-03-22
JP4954359B2 true JP4954359B2 (ja) 2012-06-13

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JP2000033877A Expired - Fee Related JP4954359B2 (ja) 1999-02-12 2000-02-10 半導体装置の作製方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210090879A1 (en) * 2016-10-07 2021-03-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW552645B (en) 2001-08-03 2003-09-11 Semiconductor Energy Lab Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device
JP4439794B2 (ja) * 2001-09-10 2010-03-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4498685B2 (ja) * 2002-03-22 2010-07-07 株式会社半導体エネルギー研究所 半導体記憶素子の作製方法
JP4813743B2 (ja) * 2002-07-24 2011-11-09 株式会社 日立ディスプレイズ 画像表示装置の製造方法
JP4772261B2 (ja) * 2002-10-31 2011-09-14 シャープ株式会社 表示装置の基板の製造方法及び結晶化装置
US6747245B2 (en) * 2002-11-06 2004-06-08 Ultratech Stepper, Inc. Laser scanning apparatus and methods for thermal processing
JP4503328B2 (ja) * 2004-03-29 2010-07-14 株式会社日本製鋼所 照射距離自動調整方法及びその装置
JP2005347764A (ja) * 2005-07-19 2005-12-15 Hitachi Ltd 画像表示装置の製造方法
JP4530032B2 (ja) * 2007-11-29 2010-08-25 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
KR101040300B1 (ko) * 2009-05-27 2011-06-10 포항공과대학교 산학협력단 레이저 충격파 세정 장치 및 그 방법
JP5071499B2 (ja) * 2010-03-16 2012-11-14 日新イオン機器株式会社 イオンビーム照射方法およびイオンビーム照射装置
JP2014212323A (ja) * 2014-05-23 2014-11-13 株式会社半導体エネルギー研究所 半導体装置
JP6012694B2 (ja) * 2014-11-24 2016-10-25 株式会社半導体エネルギー研究所 発光装置の作製方法
JP6329123B2 (ja) * 2015-12-18 2018-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2017158843A1 (ja) * 2016-03-18 2017-09-21 堺ディスプレイプロダクト株式会社 表示パネル及び表示パネルの製造方法
JP6329292B2 (ja) * 2017-03-23 2018-05-23 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897141A (ja) * 1994-09-22 1996-04-12 A G Technol Kk 多結晶半導体層の形成方法、多結晶半導体ｔｆｔ、及びビームアニール装置
JP3205478B2 (ja) * 1995-01-24 2001-09-04 株式会社半導体エネルギー研究所 レーザー照射システム
JP3544280B2 (ja) * 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210090879A1 (en) * 2016-10-07 2021-03-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
US11637009B2 (en) * 2016-10-07 2023-04-25 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate
US12437985B2 (en) 2016-10-07 2025-10-07 Semiconductor Energy Laboratory Co., Ltd. Cleaning method of glass substrate, manufacturing method of semiconductor device, and glass substrate

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JP2000306834A (ja) 2000-11-02

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