JP4949033B2 - バイポーラトランジスタ及びその製造方法 - Google Patents
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- JP4949033B2 JP4949033B2 JP2006539799A JP2006539799A JP4949033B2 JP 4949033 B2 JP4949033 B2 JP 4949033B2 JP 2006539799 A JP2006539799 A JP 2006539799A JP 2006539799 A JP2006539799 A JP 2006539799A JP 4949033 B2 JP4949033 B2 JP 4949033B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 23
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 28
- 239000002019 doping agent Substances 0.000 claims description 22
- 125000006850 spacer group Chemical group 0.000 claims description 15
- 238000005530 etching Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical group [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000000873 masking effect Effects 0.000 claims 2
- 239000000758 substrate Substances 0.000 description 19
- 238000005468 ion implantation Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
- H01L29/66287—Silicon vertical transistors with a single crystalline emitter, collector or base including extrinsic, link or graft base formed on the silicon substrate, e.g. by epitaxy, recrystallisation, after insulating device isolation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42304—Base electrodes for bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (17)
- バイポーラトランジスタの製造方法であって:
内在ベース領域と連結ベース領域の少なくとも一部分とを含む第1エピタキシャル層内への、エミッタ領域の形成工程;
側壁スペーサを含むエミッタ台座構造をマスキング部材として用いて、前記エミッタ台座構造にアンダーカットを設け且つ前記マスキング部材に覆われていない前記第1エピタキシャル層の部分を薄くするように、前記第1エピタキシャル層をエッチングする工程;及び
前記第1エピタキシャル層上への、外部ベース領域を有する第2エピタキシャル層の成長工程;
を有する製造方法。 - 請求項1に記載の製造方法であって、前記第2エピタキシャル層が前記第1エピタキシャル層より濃くドープされる、ところの製造方法。
- 請求項1に記載の製造方法であって:
前記エミッタ領域を露出する開口を有する酸化膜上にポリシリコン層を形成する工程;
前記ポリシリコン層からエミッタ台座を規定する工程;及び
前記エミッタ台座に酸化物側壁スペーサを形成し、それにより前記エミッタ台座構造を形成する工程;
を有する製造方法。 - 請求項3に記載の製造方法であって、前記第1エピタキシャル層がシリコンゲルマニウム層である、ところの製造方法。
- 請求項4に記載の製造方法であって、前記第2エピタキシャル層がシリコンゲルマニウム層である、ところの製造方法。
- バイポーラトランジスタの製造方法であって:
コレクタ領域上に、内在ベース領域と連結ベース領域の少なくとも一部分とを含む第1エピタキシャル層を形成する工程;
前記第1エピタキシャル層内のエミッタ領域、及び前記第1エピタキシャル層上のエミッタ台座の形成工程;
前記第1エピタキシャル層上の前記エミッタ台座に側壁スペーサを形成する工程;
前記側壁スペーサにアンダーカットを設け、且つ前記エミッタ台座及び前記側壁スペーサに覆われていない前記前記第1エピタキシャル層の部分を薄くすることを含む、前記第1エピタキシャル層のエッチング工程;並びに
前記第1エピタキシャル層上への、外部ベース領域を有する第2エピタキシャル層の成長工程;
を有する製造方法。 - 請求項6に記載の製造方法であって、前記第1エピタキシャル層及び第2エピタキシャル層が第1導電型のドーパントでドープされる、ところの製造方法。
- 請求項7に記載の製造方法であって、前記第2エピタキシャル層が前記第1エピタキシャル層より濃く前記第1導電型のドーパントでドープされる、ところの製造方法。
- 請求項8に記載の製造方法であって、前記第2エピタキシャル層が前記第1エピタキシャル層の上面より高い面まで成長される、ところの製造方法。
- 請求項8に記載の製造方法であって、前記第1エピタキシャル層及び前記第2エピタキシャル層がシリコンゲルマニウムを有する、ところの製造方法。
- 請求項6に記載の製造方法であって、前記エミッタ台座が第2導電型のドーパントでドープされたポリシリコン層から形成される、ところの製造方法。
- 請求項11に記載の製造方法であって、前記エミッタ領域及びエミッタ台座の形成工程が:
酸化膜を前記第1エピタキシャル層上に形成すること;
前記酸化膜に前記エミッタ領域のための開口を規定すること;
前記酸化膜上に前記ポリシリコン層を形成すること;及び
前記エミッタ領域を定めるために前記第2導電型のドーパントを前記ポリシリコン層から前記第1エピタキシャル層にドライブインすること;
を有する、ところの製造方法。 - 請求項6に記載の製造方法であって、前記エッチング工程が等方性エッチャントの使用を有する、ところの製造方法。
- 単結晶連結ベース領域に隣接する単結晶外部ベース領域を有するバイポーラトランジスタであって、
コレクタ領域上に配置された単結晶層であり、内在ベース領域と、前記内在ベース領域と前記外部ベース領域との間に配置された前記連結ベース領域と、前記内在ベース領域上のエミッタ領域とを含む単結晶層、並びに
エミッタ台座、前記エミッタ台座の側面の側壁スペーサ、及び前記エミッタ台座の下の酸化物領域であり、当該トランジスタの前記エミッタ領域に通じる開口を有する酸化物領域、を有するエミッタ台座構造を含み、
前記単結晶外部ベース領域が、前記単結晶層を下にして配置され且つ前記側壁スペーサの下まで延在している、
バイポーラトランジスタ。 - 請求項14に記載のトランジスタであって、前記外部ベース領域は、隣接する前記連結ベース領域より濃くドープされている、ところのトランジスタ。
- 請求項15に記載のトランジスタであって、前記外部ベース領域は、隣接する前記連結ベース領域のドーピングレベルの10倍以上のレベルでドープされている、ところのトランジスタ。
- 請求項16に記載のトランジスタであって、前記外部ベース領域及びその下にある単結晶層がシリコンゲルマニウムである、ところのトランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/715,971 US7005359B2 (en) | 2003-11-17 | 2003-11-17 | Bipolar junction transistor with improved extrinsic base region and method of fabrication |
US10/715,971 | 2003-11-17 | ||
PCT/US2004/037487 WO2005050742A1 (en) | 2003-11-17 | 2004-11-10 | Bipolar junction transistor with improved extrinsic base region and method of fabrication |
Publications (2)
Publication Number | Publication Date |
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JP2007512687A JP2007512687A (ja) | 2007-05-17 |
JP4949033B2 true JP4949033B2 (ja) | 2012-06-06 |
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JP2006539799A Expired - Fee Related JP4949033B2 (ja) | 2003-11-17 | 2004-11-10 | バイポーラトランジスタ及びその製造方法 |
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Country | Link |
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US (2) | US7005359B2 (ja) |
JP (1) | JP4949033B2 (ja) |
KR (1) | KR100850047B1 (ja) |
CN (1) | CN1879221A (ja) |
DE (1) | DE112004002137B4 (ja) |
TW (1) | TWI289928B (ja) |
WO (1) | WO2005050742A1 (ja) |
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US6649482B1 (en) * | 2001-06-15 | 2003-11-18 | National Semiconductor Corporation | Bipolar transistor with a silicon germanium base and an ultra small self-aligned polysilicon emitter and method of forming the transistor |
US6492238B1 (en) | 2001-06-22 | 2002-12-10 | International Business Machines Corporation | Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit |
US6767798B2 (en) * | 2002-04-09 | 2004-07-27 | Maxim Integrated Products, Inc. | Method of forming self-aligned NPN transistor with raised extrinsic base |
US6541336B1 (en) | 2002-05-15 | 2003-04-01 | International Business Machines Corporation | Method of fabricating a bipolar transistor having a realigned emitter |
US6936519B2 (en) | 2002-08-19 | 2005-08-30 | Chartered Semiconductor Manufacturing, Ltd. | Double polysilicon bipolar transistor and method of manufacture therefor |
KR100546332B1 (ko) * | 2003-06-13 | 2006-01-26 | 삼성전자주식회사 | 바이폴라 접합 트랜지스터 및 그 제조 방법 |
TWI241025B (en) | 2003-06-13 | 2005-10-01 | Samsung Electronics Co Ltd | Bipolar junction transistors and methods of manufacturing the same |
-
2003
- 2003-11-17 US US10/715,971 patent/US7005359B2/en not_active Expired - Fee Related
-
2004
- 2004-08-20 TW TW093125203A patent/TWI289928B/zh not_active IP Right Cessation
- 2004-11-10 DE DE112004002137T patent/DE112004002137B4/de not_active Expired - Fee Related
- 2004-11-10 KR KR1020067009394A patent/KR100850047B1/ko not_active IP Right Cessation
- 2004-11-10 WO PCT/US2004/037487 patent/WO2005050742A1/en active Application Filing
- 2004-11-10 JP JP2006539799A patent/JP4949033B2/ja not_active Expired - Fee Related
- 2004-11-10 CN CNA200480033204XA patent/CN1879221A/zh active Pending
-
2005
- 2005-11-07 US US11/269,477 patent/US20060113634A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI289928B (en) | 2007-11-11 |
KR20060086425A (ko) | 2006-07-31 |
CN1879221A (zh) | 2006-12-13 |
DE112004002137B4 (de) | 2010-07-08 |
WO2005050742A1 (en) | 2005-06-02 |
US20050104160A1 (en) | 2005-05-19 |
US7005359B2 (en) | 2006-02-28 |
JP2007512687A (ja) | 2007-05-17 |
TW200518339A (en) | 2005-06-01 |
KR100850047B1 (ko) | 2008-08-04 |
US20060113634A1 (en) | 2006-06-01 |
DE112004002137T5 (de) | 2008-03-20 |
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