JP4947168B2 - 音響センサ - Google Patents

音響センサ Download PDF

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Publication number
JP4947168B2
JP4947168B2 JP2010038289A JP2010038289A JP4947168B2 JP 4947168 B2 JP4947168 B2 JP 4947168B2 JP 2010038289 A JP2010038289 A JP 2010038289A JP 2010038289 A JP2010038289 A JP 2010038289A JP 4947168 B2 JP4947168 B2 JP 4947168B2
Authority
JP
Japan
Prior art keywords
substrate
acoustic
electrode plate
detection element
acoustic detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010038289A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011176531A (ja
JP2011176531A5 (enExample
Inventor
英一 大村
尚志 小澤
秀一 若林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Omron Corp
Original Assignee
Omron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Omron Corp filed Critical Omron Corp
Priority to JP2010038289A priority Critical patent/JP4947168B2/ja
Priority to EP10196842A priority patent/EP2360942A3/en
Priority to KR1020110000372A priority patent/KR101205645B1/ko
Priority to CN2011100033783A priority patent/CN102164333A/zh
Priority to US13/016,436 priority patent/US8300857B2/en
Publication of JP2011176531A publication Critical patent/JP2011176531A/ja
Publication of JP2011176531A5 publication Critical patent/JP2011176531A5/ja
Application granted granted Critical
Publication of JP4947168B2 publication Critical patent/JP4947168B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/031—Anodic bondings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
  • Pressure Sensors (AREA)
JP2010038289A 2010-02-24 2010-02-24 音響センサ Expired - Fee Related JP4947168B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2010038289A JP4947168B2 (ja) 2010-02-24 2010-02-24 音響センサ
EP10196842A EP2360942A3 (en) 2010-02-24 2010-12-23 Acoustic sensor
KR1020110000372A KR101205645B1 (ko) 2010-02-24 2011-01-04 음향 센서
CN2011100033783A CN102164333A (zh) 2010-02-24 2011-01-10 音响传感器
US13/016,436 US8300857B2 (en) 2010-02-24 2011-01-28 Acoustic sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010038289A JP4947168B2 (ja) 2010-02-24 2010-02-24 音響センサ

Publications (3)

Publication Number Publication Date
JP2011176531A JP2011176531A (ja) 2011-09-08
JP2011176531A5 JP2011176531A5 (enExample) 2011-10-20
JP4947168B2 true JP4947168B2 (ja) 2012-06-06

Family

ID=44065016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010038289A Expired - Fee Related JP4947168B2 (ja) 2010-02-24 2010-02-24 音響センサ

Country Status (5)

Country Link
US (1) US8300857B2 (enExample)
EP (1) EP2360942A3 (enExample)
JP (1) JP4947168B2 (enExample)
KR (1) KR101205645B1 (enExample)
CN (1) CN102164333A (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5454345B2 (ja) * 2010-05-11 2014-03-26 オムロン株式会社 音響センサ及びその製造方法
US8969980B2 (en) * 2011-09-23 2015-03-03 Knowles Electronics, Llc Vented MEMS apparatus and method of manufacture
US20130101143A1 (en) * 2011-10-21 2013-04-25 Hung-Jen Chen Micro-electro-mechanical system microphone chip with an expanded back chamber
JP2013143651A (ja) * 2012-01-10 2013-07-22 Nippon Dempa Kogyo Co Ltd ディスク振動子及び電子部品
JP5861497B2 (ja) * 2012-02-29 2016-02-16 オムロン株式会社 センサ装置
ITTO20130247A1 (it) 2013-03-26 2014-09-27 St Microelectronics Srl Metodo di incapsulamento di un dispositivo trasduttore mems e dispositivo trasduttore mems incapsulato
US9491531B2 (en) 2014-08-11 2016-11-08 3R Semiconductor Technology Inc. Microphone device for reducing noise coupling effect
JP2016058880A (ja) * 2014-09-09 2016-04-21 晶▲めい▼電子股▲ふん▼有限公司 ノイズカップリングの影響を低減させるマイクロフォン装置
WO2016043738A1 (en) * 2014-09-17 2016-03-24 Intel Corporation DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs)
US10648879B2 (en) * 2016-02-22 2020-05-12 Kathirgamasundaram Sooriakumar Capacitive pressure sensor
JP2019106616A (ja) * 2017-12-12 2019-06-27 新日本無線株式会社 Ｍｅｍｓ素子
KR102486584B1 (ko) * 2018-05-03 2023-01-10 주식회사 디비하이텍 멤스 마이크로폰, 이를 포함하는 멤스 마이크로폰 패키지 및 이의 제조 방법
KR102499855B1 (ko) * 2018-05-03 2023-02-13 주식회사 디비하이텍 멤스 마이크로폰 이를 포함하는 멤스 마이크로폰 패키지 및 이의 제조 방법
JP2020022038A (ja) * 2018-07-31 2020-02-06 Tdk株式会社 Ｍｅｍｓマイクロフォン
CN111189531B (zh) * 2020-03-09 2025-01-24 西南交通大学 一种用于正弦波面样品轻气炮加载试验的检测系统
US11787690B1 (en) 2020-04-03 2023-10-17 Knowles Electronics, Llc. MEMS assembly substrates including a bond layer
CN112146789A (zh) * 2020-09-15 2020-12-29 南京慧卉飞电子商务有限公司 一种利用磁流变液的智能化音响检测装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
US7434305B2 (en) * 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
JP2002345088A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 圧力感応装置及びこれに用いられる半導体基板の製造方法
WO2005086535A1 (ja) * 2004-03-09 2005-09-15 Matsushita Electric Industrial Co., Ltd. エレクトレットコンデンサーマイクロホン
CN1728888A (zh) * 2004-07-30 2006-02-01 三洋电机株式会社 声敏元件
JP4539450B2 (ja) * 2004-11-04 2010-09-08 オムロン株式会社 容量型振動センサ及びその製造方法
JP4188325B2 (ja) * 2005-02-09 2008-11-26 ホシデン株式会社 防塵板内蔵マイクロホン
DE102005053765B4 (de) * 2005-11-10 2016-04-14 Epcos Ag MEMS-Package und Verfahren zur Herstellung
JP4742972B2 (ja) * 2006-04-27 2011-08-10 オムロン株式会社 マイクロフォンの製造方法
TWI319690B (en) * 2006-09-08 2010-01-11 Ind Tech Res Inst Structure and manufacturing method of inversed microphone module and microphone chip component
US7550828B2 (en) * 2007-01-03 2009-06-23 Stats Chippac, Inc. Leadframe package for MEMS microphone assembly
JP2008278476A (ja) * 2007-04-05 2008-11-13 Yamaha Corp コンデンサマイク装置のｓｎ比改善方法およびコンデンサマイク装置並びにコンデンサマイク装置搭載機器
KR101008399B1 (ko) * 2007-09-03 2011-01-14 주식회사 비에스이 내벽을 금속성 혹은 전도성 물질로 감싼 세라믹 패키지를이용한 콘덴서 마이크로폰
WO2009051183A1 (ja) * 2007-10-19 2009-04-23 Nhk Spring Co., Ltd. 接続端子、半導体パッケージ、配線基板、コネクタ、およびマイクロコンタクタ
CN101426164B (zh) * 2007-11-01 2012-10-03 财团法人工业技术研究院 电声感知装置
JP2009246779A (ja) * 2008-03-31 2009-10-22 Funai Electric Advanced Applied Technology Research Institute Inc マイクロホンユニット及びその製造方法
EP2252077B1 (en) * 2009-05-11 2012-07-11 STMicroelectronics Srl Assembly of a capacitive acoustic transducer of the microelectromechanical type and package thereof

Also Published As

Publication number Publication date
KR20110097614A (ko) 2011-08-31
EP2360942A3 (en) 2012-03-28
US20110204745A1 (en) 2011-08-25
JP2011176531A (ja) 2011-09-08
CN102164333A (zh) 2011-08-24
EP2360942A2 (en) 2011-08-24
US8300857B2 (en) 2012-10-30
KR101205645B1 (ko) 2012-11-27

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