KR101205645B1 - 음향 센서 - Google Patents

음향 센서 Download PDF

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Publication number
KR101205645B1
KR101205645B1 KR1020110000372A KR20110000372A KR101205645B1 KR 101205645 B1 KR101205645 B1 KR 101205645B1 KR 1020110000372 A KR1020110000372 A KR 1020110000372A KR 20110000372 A KR20110000372 A KR 20110000372A KR 101205645 B1 KR101205645 B1 KR 101205645B1
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KR
South Korea
Prior art keywords
substrate
electrode plate
acoustic
back chamber
detection element
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KR1020110000372A
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English (en)
Korean (ko)
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KR20110097614A (ko
Inventor
에이치 오무라
나오시 오자와
슈이치 와카바야시
Original Assignee
오므론 가부시키가이샤
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Publication of KR20110097614A publication Critical patent/KR20110097614A/ko
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01H—MEASUREMENT OF MECHANICAL VIBRATIONS OR ULTRASONIC, SONIC OR INFRASONIC WAVES
    • G01H11/00—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties
    • G01H11/06—Measuring mechanical vibrations or ultrasonic, sonic or infrasonic waves by detecting changes in electric or magnetic properties by electric means
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/031—Anodic bondings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16151—Cap comprising an aperture, e.g. for pressure control, encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)
KR1020110000372A 2010-02-24 2011-01-04 음향 센서 Active KR101205645B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-038289 2010-02-24
JP2010038289A JP4947168B2 (ja) 2010-02-24 2010-02-24 音響センサ

Publications (2)

Publication Number Publication Date
KR20110097614A KR20110097614A (ko) 2011-08-31
KR101205645B1 true KR101205645B1 (ko) 2012-11-27

Family

ID=44065016

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020110000372A Active KR101205645B1 (ko) 2010-02-24 2011-01-04 음향 센서

Country Status (5)

Country Link
US (1) US8300857B2 (enExample)
EP (1) EP2360942A3 (enExample)
JP (1) JP4947168B2 (enExample)
KR (1) KR101205645B1 (enExample)
CN (1) CN102164333A (enExample)

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JP5454345B2 (ja) * 2010-05-11 2014-03-26 オムロン株式会社 音響センサ及びその製造方法
US8969980B2 (en) * 2011-09-23 2015-03-03 Knowles Electronics, Llc Vented MEMS apparatus and method of manufacture
US20130101143A1 (en) * 2011-10-21 2013-04-25 Hung-Jen Chen Micro-electro-mechanical system microphone chip with an expanded back chamber
JP2013143651A (ja) * 2012-01-10 2013-07-22 Nippon Dempa Kogyo Co Ltd ディスク振動子及び電子部品
JP5861497B2 (ja) * 2012-02-29 2016-02-16 オムロン株式会社 センサ装置
ITTO20130247A1 (it) 2013-03-26 2014-09-27 St Microelectronics Srl Metodo di incapsulamento di un dispositivo trasduttore mems e dispositivo trasduttore mems incapsulato
US9491531B2 (en) 2014-08-11 2016-11-08 3R Semiconductor Technology Inc. Microphone device for reducing noise coupling effect
JP2016058880A (ja) * 2014-09-09 2016-04-21 晶▲めい▼電子股▲ふん▼有限公司 ノイズカップリングの影響を低減させるマイクロフォン装置
WO2016043738A1 (en) * 2014-09-17 2016-03-24 Intel Corporation DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs)
US10488288B2 (en) 2016-02-22 2019-11-26 Kathirgamasundaram Sooriakumar Capacitive pressure sensor
JP2019106616A (ja) * 2017-12-12 2019-06-27 新日本無線株式会社 Ｍｅｍｓ素子
KR102486584B1 (ko) * 2018-05-03 2023-01-10 주식회사 디비하이텍 멤스 마이크로폰, 이를 포함하는 멤스 마이크로폰 패키지 및 이의 제조 방법
KR102499855B1 (ko) * 2018-05-03 2023-02-13 주식회사 디비하이텍 멤스 마이크로폰 이를 포함하는 멤스 마이크로폰 패키지 및 이의 제조 방법
JP2020022038A (ja) * 2018-07-31 2020-02-06 Tdk株式会社 Ｍｅｍｓマイクロフォン
CN111189531B (zh) * 2020-03-09 2025-01-24 西南交通大学 一种用于正弦波面样品轻气炮加载试验的检测系统
US11787690B1 (en) 2020-04-03 2023-10-17 Knowles Electronics, Llc. MEMS assembly substrates including a bond layer
CN112146789A (zh) * 2020-09-15 2020-12-29 南京慧卉飞电子商务有限公司 一种利用磁流变液的智能化音响检测装置

Citations (2)

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JP2007295487A (ja) * 2006-04-27 2007-11-08 Omron Corp マイクロフォンの製造方法
JP2008278476A (ja) * 2007-04-05 2008-11-13 Yamaha Corp コンデンサマイク装置のｓｎ比改善方法およびコンデンサマイク装置並びにコンデンサマイク装置搭載機器

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US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
US7434305B2 (en) 2000-11-28 2008-10-14 Knowles Electronics, Llc. Method of manufacturing a microphone
JP2002345088A (ja) * 2001-05-18 2002-11-29 Mitsubishi Electric Corp 圧力感応装置及びこれに用いられる半導体基板の製造方法
CN1926919B (zh) * 2004-03-09 2011-01-26 松下电器产业株式会社 驻极体电容式麦克风
CN1728888A (zh) * 2004-07-30 2006-02-01 三洋电机株式会社 声敏元件
JP4539450B2 (ja) * 2004-11-04 2010-09-08 オムロン株式会社 容量型振動センサ及びその製造方法
JP4188325B2 (ja) * 2005-02-09 2008-11-26 ホシデン株式会社 防塵板内蔵マイクロホン
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WO2009051183A1 (ja) * 2007-10-19 2009-04-23 Nhk Spring Co., Ltd. 接続端子、半導体パッケージ、配線基板、コネクタ、およびマイクロコンタクタ
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JP2007295487A (ja) * 2006-04-27 2007-11-08 Omron Corp マイクロフォンの製造方法
JP2008278476A (ja) * 2007-04-05 2008-11-13 Yamaha Corp コンデンサマイク装置のｓｎ比改善方法およびコンデンサマイク装置並びにコンデンサマイク装置搭載機器

Also Published As

Publication number Publication date
US20110204745A1 (en) 2011-08-25
CN102164333A (zh) 2011-08-24
US8300857B2 (en) 2012-10-30
EP2360942A3 (en) 2012-03-28
JP4947168B2 (ja) 2012-06-06
EP2360942A2 (en) 2011-08-24
JP2011176531A (ja) 2011-09-08
KR20110097614A (ko) 2011-08-31

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