JP4946133B2 - ヒューズ素子切断手順の決定方法 - Google Patents
ヒューズ素子切断手順の決定方法 Download PDFInfo
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- JP4946133B2 JP4946133B2 JP2006094490A JP2006094490A JP4946133B2 JP 4946133 B2 JP4946133 B2 JP 4946133B2 JP 2006094490 A JP2006094490 A JP 2006094490A JP 2006094490 A JP2006094490 A JP 2006094490A JP 4946133 B2 JP4946133 B2 JP 4946133B2
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- Prior art keywords
- fuse element
- pulse
- cutting
- cut
- fuse
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- 238000005520 cutting process Methods 0.000 title claims description 86
- 238000000034 method Methods 0.000 title claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 30
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- 239000010410 layer Substances 0.000 description 66
- 239000011229 interlayer Substances 0.000 description 29
- 229910021332 silicide Inorganic materials 0.000 description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 21
- 229920005591 polysilicon Polymers 0.000 description 21
- 239000003870 refractory metal Substances 0.000 description 18
- 238000002955 isolation Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical class O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000001681 protective effect Effects 0.000 description 6
- 239000002344 surface layer Substances 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- 238000004151 rapid thermal annealing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008646 thermal stress Effects 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
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- 238000005259 measurement Methods 0.000 description 3
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- 230000003071 parasitic effect Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229910010282 TiON Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
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- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical class [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- Design And Manufacture Of Integrated Circuits (AREA)
- Read Only Memory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006094490A JP4946133B2 (ja) | 2005-03-30 | 2006-03-30 | ヒューズ素子切断手順の決定方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005099404 | 2005-03-30 | ||
| JP2005099404 | 2005-03-30 | ||
| JP2006094490A JP4946133B2 (ja) | 2005-03-30 | 2006-03-30 | ヒューズ素子切断手順の決定方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006310829A JP2006310829A (ja) | 2006-11-09 |
| JP2006310829A5 JP2006310829A5 (enExample) | 2009-05-07 |
| JP4946133B2 true JP4946133B2 (ja) | 2012-06-06 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006094490A Expired - Fee Related JP4946133B2 (ja) | 2005-03-30 | 2006-03-30 | ヒューズ素子切断手順の決定方法 |
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| Country | Link |
|---|---|
| JP (1) | JP4946133B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4871767B2 (ja) * | 2007-03-20 | 2012-02-08 | 日本電信電話株式会社 | ナノギャップ電極の製造方法 |
| US7405590B1 (en) * | 2007-07-18 | 2008-07-29 | Kabushiki Kaisha Toshiba | Systems and methods for controlling a fuse programming current in an IC |
| JP5435713B2 (ja) | 2009-07-23 | 2014-03-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法、製造プログラム、及び半導体装置 |
| JP2011091447A (ja) * | 2011-02-07 | 2011-05-06 | Renesas Electronics Corp | ヒューズの溶断方法 |
| JP2013037749A (ja) | 2011-08-09 | 2013-02-21 | Fujitsu Ltd | 書込回路、半導体集積回路、及び書込方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6246496A (ja) * | 1985-08-23 | 1987-02-28 | Sony Corp | 固定記憶装置の書き込み方法 |
| JP3354033B2 (ja) * | 1994-06-17 | 2002-12-09 | 株式会社豊田中央研究所 | 半導体装置及びその製造方法 |
| JP3104843B2 (ja) * | 1994-08-19 | 2000-10-30 | 川崎製鉄株式会社 | アンチヒューズ型半導体集積回路装置 |
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- 2006-03-30 JP JP2006094490A patent/JP4946133B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2006310829A (ja) | 2006-11-09 |
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