JP4945725B2 - 改善されたエピタキシャル材料を製造するための方法 - Google Patents

改善されたエピタキシャル材料を製造するための方法 Download PDF

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JP4945725B2
JP4945725B2 JP2010518413A JP2010518413A JP4945725B2 JP 4945725 B2 JP4945725 B2 JP 4945725B2 JP 2010518413 A JP2010518413 A JP 2010518413A JP 2010518413 A JP2010518413 A JP 2010518413A JP 4945725 B2 JP4945725 B2 JP 4945725B2
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growth
nitride
island
base substrate
defects
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JP2010534611A5 (enExample
JP2010534611A (ja
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シャンタール アリーナ，
サブハシュ マハジャン，
ランジャン ダッタ，
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Soitec SA
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    • H10P14/2921—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H10P14/271—
    • H10P14/274—
    • H10P14/276—
    • H10P14/2901—
    • H10P14/3402—
    • H10P14/3416—

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2010518413A 2007-07-26 2008-07-25 改善されたエピタキシャル材料を製造するための方法 Active JP4945725B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US95213107P 2007-07-26 2007-07-26
US60/952,131 2007-07-26
US1721607P 2007-12-28 2007-12-28
US61/017,216 2007-12-28
PCT/US2008/071199 WO2009015337A1 (en) 2007-07-26 2008-07-25 Methods for producing improved epitaxial materials

Publications (3)

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JP2010534611A JP2010534611A (ja) 2010-11-11
JP2010534611A5 JP2010534611A5 (enExample) 2011-09-08
JP4945725B2 true JP4945725B2 (ja) 2012-06-06

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US (1) US7732306B2 (enExample)
EP (1) EP2171747B1 (enExample)
JP (1) JP4945725B2 (enExample)
KR (1) KR101355593B1 (enExample)
CN (1) CN101730926B (enExample)
WO (1) WO2009015337A1 (enExample)

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WO2015127399A1 (en) * 2014-02-22 2015-08-27 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

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WO2009015350A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and templates grown by the methods
TW201013752A (en) * 2008-09-16 2010-04-01 Univ Nat Central Manufacturing method of single-crystalline substrate containing gallium nitride
US8329565B2 (en) * 2008-11-14 2012-12-11 Soitec Methods for improving the quality of structures comprising semiconductor materials
US8247314B2 (en) * 2008-11-14 2012-08-21 Soitec Methods for improving the quality of structures comprising semiconductor materials
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KR20120041237A (ko) 2009-08-04 2012-04-30 갠 시스템즈 인크. 아일랜드 매트릭스 갈륨 나이트라이드 마이크로파 및 전력 트랜지스터
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
CN102893392B (zh) 2010-04-13 2015-08-05 Gan系统公司 采用孤岛拓扑结构的高密度氮化镓器件
US9287452B2 (en) 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
FR2968830B1 (fr) 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
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CN102842490B (zh) * 2012-08-17 2015-11-11 圆融光电科技有限公司 一种化合物半导体薄膜的自组装生长方法
CN103413758B (zh) * 2013-07-17 2017-02-08 华为技术有限公司 半导体鳍条的制作方法、FinFET器件的制作方法
US8916445B1 (en) * 2013-08-16 2014-12-23 International Business Machines Corporation Semiconductor devices and methods of manufacture
KR102140789B1 (ko) 2014-02-17 2020-08-03 삼성전자주식회사 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법
CN105019019B (zh) * 2014-04-30 2019-04-19 应用材料公司 用于选择性外延硅沟槽填充的方法
JP2015216311A (ja) * 2014-05-13 2015-12-03 株式会社ニューフレアテクノロジー 半導体基板、半導体基板の製造方法および半導体装置
WO2015198117A1 (en) 2014-06-26 2015-12-30 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials
CN106128948A (zh) * 2016-07-26 2016-11-16 中国科学院半导体研究所 在Si衬底上利用应变调制层减少GaN层穿透位错的结构及方法
WO2018169519A1 (en) * 2017-03-14 2018-09-20 Intel Corporation METHODS AND APPARATUS FOR COPLANAR GaN ISLANDS INCLUDING CONFINED EPITAXIAL LAYER
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
WO2021146042A1 (en) * 2020-01-16 2021-07-22 Slt Technologies, Inc. High-quality group-iii metal nitride seed crystal and method of making
KR20230028782A (ko) * 2020-06-19 2023-03-02 더 리전츠 오브 더 유니버시티 오브 캘리포니아 반도체 디바이스를 실현하기 위한 이송 프로세스
US20230115980A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Masking layers in led structures
CN118326332A (zh) * 2024-04-16 2024-07-12 南京大学 一种降低AlN外延层缺陷的外延生长方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015127399A1 (en) * 2014-02-22 2015-08-27 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9876140B2 (en) 2014-02-22 2018-01-23 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199537B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

Also Published As

Publication number Publication date
US20090091002A1 (en) 2009-04-09
KR20100040299A (ko) 2010-04-19
CN101730926B (zh) 2012-09-19
CN101730926A (zh) 2010-06-09
US7732306B2 (en) 2010-06-08
EP2171747A1 (en) 2010-04-07
JP2010534611A (ja) 2010-11-11
KR101355593B1 (ko) 2014-01-24
EP2171747B1 (en) 2016-07-13
WO2009015337A1 (en) 2009-01-29

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