JP4945725B2 - 改善されたエピタキシャル材料を製造するための方法 - Google Patents

改善されたエピタキシャル材料を製造するための方法 Download PDF

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JP4945725B2
JP4945725B2 JP2010518413A JP2010518413A JP4945725B2 JP 4945725 B2 JP4945725 B2 JP 4945725B2 JP 2010518413 A JP2010518413 A JP 2010518413A JP 2010518413 A JP2010518413 A JP 2010518413A JP 4945725 B2 JP4945725 B2 JP 4945725B2
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growth
nitride
island
base substrate
defects
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JP2010534611A5 (enExample
JP2010534611A (ja
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シャンタール アリーナ，
サブハシュ マハジャン，
ランジャン ダッタ，
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Soitec SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
JP2010518413A 2007-07-26 2008-07-25 改善されたエピタキシャル材料を製造するための方法 Active JP4945725B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US95213107P 2007-07-26 2007-07-26
US60/952,131 2007-07-26
US1721607P 2007-12-28 2007-12-28
US61/017,216 2007-12-28
PCT/US2008/071199 WO2009015337A1 (en) 2007-07-26 2008-07-25 Methods for producing improved epitaxial materials

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JP2010534611A JP2010534611A (ja) 2010-11-11
JP2010534611A5 JP2010534611A5 (enExample) 2011-09-08
JP4945725B2 true JP4945725B2 (ja) 2012-06-06

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US (1) US7732306B2 (enExample)
EP (1) EP2171747B1 (enExample)
JP (1) JP4945725B2 (enExample)
KR (1) KR101355593B1 (enExample)
CN (1) CN101730926B (enExample)
WO (1) WO2009015337A1 (enExample)

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WO2015127399A1 (en) * 2014-02-22 2015-08-27 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199537B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

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US8574968B2 (en) * 2007-07-26 2013-11-05 Soitec Epitaxial methods and templates grown by the methods
TW201013752A (en) * 2008-09-16 2010-04-01 Univ Nat Central Manufacturing method of single-crystalline substrate containing gallium nitride
US8329565B2 (en) * 2008-11-14 2012-12-11 Soitec Methods for improving the quality of structures comprising semiconductor materials
EP2364504B1 (en) * 2008-11-14 2019-08-28 Soitec Methods for improving the quality of structures comprising semiconductor materials
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
JP5985393B2 (ja) 2009-08-04 2016-09-06 ジーエーエヌ システムズ インコーポレイテッド アイランドマトリックス化窒化ガリウムマイクロ波トランジスタおよびパワースイッチングトランジスタ
US9029866B2 (en) * 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
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FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
FR2968830B1 (fr) * 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
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CN102842490B (zh) * 2012-08-17 2015-11-11 圆融光电科技有限公司 一种化合物半导体薄膜的自组装生长方法
CN103413758B (zh) * 2013-07-17 2017-02-08 华为技术有限公司 半导体鳍条的制作方法、FinFET器件的制作方法
US8916445B1 (en) * 2013-08-16 2014-12-23 International Business Machines Corporation Semiconductor devices and methods of manufacture
KR102140789B1 (ko) 2014-02-17 2020-08-03 삼성전자주식회사 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법
CN105019019B (zh) * 2014-04-30 2019-04-19 应用材料公司 用于选择性外延硅沟槽填充的方法
JP2015216311A (ja) * 2014-05-13 2015-12-03 株式会社ニューフレアテクノロジー 半導体基板、半導体基板の製造方法および半導体装置
WO2015198117A1 (en) 2014-06-26 2015-12-30 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials
CN106128948A (zh) * 2016-07-26 2016-11-16 中国科学院半导体研究所 在Si衬底上利用应变调制层减少GaN层穿透位错的结构及方法
WO2018169519A1 (en) * 2017-03-14 2018-09-20 Intel Corporation METHODS AND APPARATUS FOR COPLANAR GaN ISLANDS INCLUDING CONFINED EPITAXIAL LAYER
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
EP4090790A1 (en) * 2020-01-16 2022-11-23 SLT Technologies, Inc. High-quality group-iii metal nitride seed crystal and method of making
US20230115980A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Masking layers in led structures
CN118326332A (zh) * 2024-04-16 2024-07-12 南京大学 一种降低AlN外延层缺陷的外延生长方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015127399A1 (en) * 2014-02-22 2015-08-27 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9412902B2 (en) 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9876140B2 (en) 2014-02-22 2018-01-23 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199537B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure

Also Published As

Publication number Publication date
KR20100040299A (ko) 2010-04-19
EP2171747A1 (en) 2010-04-07
CN101730926B (zh) 2012-09-19
WO2009015337A1 (en) 2009-01-29
JP2010534611A (ja) 2010-11-11
US20090091002A1 (en) 2009-04-09
KR101355593B1 (ko) 2014-01-24
US7732306B2 (en) 2010-06-08
EP2171747B1 (en) 2016-07-13
CN101730926A (zh) 2010-06-09

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