KR101355593B1 - 개선된 에피택시 재료들의 제조 방법 - Google Patents

개선된 에피택시 재료들의 제조 방법 Download PDF

Info

Publication number
KR101355593B1
KR101355593B1 KR1020107001628A KR20107001628A KR101355593B1 KR 101355593 B1 KR101355593 B1 KR 101355593B1 KR 1020107001628 A KR1020107001628 A KR 1020107001628A KR 20107001628 A KR20107001628 A KR 20107001628A KR 101355593 B1 KR101355593 B1 KR 101355593B1
Authority
KR
South Korea
Prior art keywords
nitride
layer
growth
iii
island
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020107001628A
Other languages
English (en)
Korean (ko)
Other versions
KR20100040299A (ko
Inventor
샨탈 아레나
수바쉬 마하잔
란잔 다타
Original Assignee
아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티
소이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티, 소이텍 filed Critical 아리조나 보드 오브 리젠츠 퍼 앤 온 비하프 오브 아리조나 스테이트 유니버시티
Publication of KR20100040299A publication Critical patent/KR20100040299A/ko
Application granted granted Critical
Publication of KR101355593B1 publication Critical patent/KR101355593B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H01L21/02645—Seed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020107001628A 2007-07-26 2008-07-25 개선된 에피택시 재료들의 제조 방법 Active KR101355593B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US95213107P 2007-07-26 2007-07-26
US60/952,131 2007-07-26
US1721607P 2007-12-28 2007-12-28
US61/017,216 2007-12-28
PCT/US2008/071199 WO2009015337A1 (en) 2007-07-26 2008-07-25 Methods for producing improved epitaxial materials

Publications (2)

Publication Number Publication Date
KR20100040299A KR20100040299A (ko) 2010-04-19
KR101355593B1 true KR101355593B1 (ko) 2014-01-24

Family

ID=39876857

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107001628A Active KR101355593B1 (ko) 2007-07-26 2008-07-25 개선된 에피택시 재료들의 제조 방법

Country Status (6)

Country Link
US (1) US7732306B2 (enExample)
EP (1) EP2171747B1 (enExample)
JP (1) JP4945725B2 (enExample)
KR (1) KR101355593B1 (enExample)
CN (1) CN101730926B (enExample)
WO (1) WO2009015337A1 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4462249B2 (ja) 2005-09-22 2010-05-12 ソニー株式会社 発光ダイオードの製造方法、集積型発光ダイオードの製造方法および窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法
WO2009015350A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and templates grown by the methods
TW201013752A (en) * 2008-09-16 2010-04-01 Univ Nat Central Manufacturing method of single-crystalline substrate containing gallium nitride
JP5571679B2 (ja) * 2008-11-14 2014-08-13 ソイテック 半導体材料を含む構造の品質を改善する方法
US8329565B2 (en) 2008-11-14 2012-12-11 Soitec Methods for improving the quality of structures comprising semiconductor materials
US9818857B2 (en) 2009-08-04 2017-11-14 Gan Systems Inc. Fault tolerant design for large area nitride semiconductor devices
US9029866B2 (en) 2009-08-04 2015-05-12 Gan Systems Inc. Gallium nitride power devices using island topography
EP2465141B1 (en) 2009-08-04 2021-04-07 GaN Systems Inc. Gallium nitride microwave and power switching transistors with matrix layout
US8791508B2 (en) 2010-04-13 2014-07-29 Gan Systems Inc. High density gallium nitride devices using island topology
US9287452B2 (en) 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
US9023721B2 (en) 2010-11-23 2015-05-05 Soitec Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods
FR2968830B1 (fr) * 2010-12-08 2014-03-21 Soitec Silicon On Insulator Couches matricielles ameliorees pour le depot heteroepitaxial de materiaux semiconducteurs de nitrure iii en utilisant des procedes hvpe
FR2968678B1 (fr) * 2010-12-08 2015-11-20 Soitec Silicon On Insulator Procédés pour former des matériaux a base de nitrure du groupe iii et structures formées par ces procédés
DE102012107001A1 (de) * 2012-07-31 2014-02-06 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN102842490B (zh) * 2012-08-17 2015-11-11 圆融光电科技有限公司 一种化合物半导体薄膜的自组装生长方法
CN103413758B (zh) * 2013-07-17 2017-02-08 华为技术有限公司 半导体鳍条的制作方法、FinFET器件的制作方法
US8916445B1 (en) * 2013-08-16 2014-12-23 International Business Machines Corporation Semiconductor devices and methods of manufacture
KR102140789B1 (ko) 2014-02-17 2020-08-03 삼성전자주식회사 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법
US10199535B2 (en) 2014-02-22 2019-02-05 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
US9412902B2 (en) * 2014-02-22 2016-08-09 Sensor Electronic Technology, Inc. Semiconductor structure with stress-reducing buffer structure
CN105019019B (zh) * 2014-04-30 2019-04-19 应用材料公司 用于选择性外延硅沟槽填充的方法
JP2015216311A (ja) * 2014-05-13 2015-12-03 株式会社ニューフレアテクノロジー 半導体基板、半導体基板の製造方法および半導体装置
EP3161877B1 (en) 2014-06-26 2022-01-19 Soitec Semiconductor structures including bonding layers, multijunction photovoltaic cells and related methods
US9773889B2 (en) * 2014-07-18 2017-09-26 Taiwan Semiconductor Manufacturing Company Limited Method of semiconductor arrangement formation
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials
CN106128948A (zh) * 2016-07-26 2016-11-16 中国科学院半导体研究所 在Si衬底上利用应变调制层减少GaN层穿透位错的结构及方法
WO2018169519A1 (en) * 2017-03-14 2018-09-20 Intel Corporation METHODS AND APPARATUS FOR COPLANAR GaN ISLANDS INCLUDING CONFINED EPITAXIAL LAYER
WO2018177552A1 (en) * 2017-03-31 2018-10-04 Cambridge Enterprise Limited Zincblende structure group iii-nitride
EP4090790A1 (en) * 2020-01-16 2022-11-23 SLT Technologies, Inc. High-quality group-iii metal nitride seed crystal and method of making
US20230115980A1 (en) * 2021-10-11 2023-04-13 Applied Materials, Inc. Masking layers in led structures
CN118326332A (zh) * 2024-04-16 2024-07-12 南京大学 一种降低AlN外延层缺陷的外延生长方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137732A1 (en) 2000-07-07 2004-07-15 Eric Frayssinet Process for producing an epitaxial layer of gallium nitride
KR20040070255A (ko) * 2001-12-21 2004-08-06 아익스트론 아게 비 ⅲ-ⅴ 기판상의 ⅲ-ⅴ 반도체층 증착방법
WO2007068756A1 (en) 2005-12-15 2007-06-21 Lumilog Process for growth of low dislocation density gan

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6103604A (en) * 1997-02-10 2000-08-15 Trw Inc. High electron mobility transparent conductor
EP0942459B1 (en) * 1997-04-11 2012-03-21 Nichia Corporation Method of growing nitride semiconductors
FR2769924B1 (fr) * 1997-10-20 2000-03-10 Centre Nat Rech Scient Procede de realisation d'une couche epitaxiale de nitrure de gallium, couche epitaxiale de nitrure de gallium et composant optoelectronique muni d'une telle couche
EP1184897B8 (en) * 1999-03-17 2006-10-11 Mitsubishi Cable Industries, Ltd. Semiconductor base and its manufacturing method, and semiconductor crystal manufacturing method
US6534332B2 (en) * 2000-04-21 2003-03-18 The Regents Of The University Of California Method of growing GaN films with a low density of structural defects using an interlayer
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP4556300B2 (ja) * 2000-07-18 2010-10-06 ソニー株式会社 結晶成長方法
FR2817394B1 (fr) * 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
WO2002044443A1 (en) 2000-11-30 2002-06-06 North Carolina State University Methods and apparatus for producing m'n based materials
JP3988018B2 (ja) * 2001-01-18 2007-10-10 ソニー株式会社 結晶膜、結晶基板および半導体装置
GB0111207D0 (en) * 2001-05-08 2001-06-27 Btg Int Ltd A method to produce germanium layers
US6784074B2 (en) * 2001-05-09 2004-08-31 Nsc-Nanosemiconductor Gmbh Defect-free semiconductor templates for epitaxial growth and method of making same
TW561526B (en) * 2001-12-21 2003-11-11 Aixtron Ag Method for depositing III-V semiconductor layers on a non-III-V substrate
JP2003282447A (ja) * 2002-03-20 2003-10-03 Fuji Photo Film Co Ltd 半導体素子用基板の製造方法および半導体素子用基板ならびに半導体素子
FR2842832B1 (fr) * 2002-07-24 2006-01-20 Lumilog Procede de realisation par epitaxie en phase vapeur d'un film de nitrure de gallium a faible densite de defaut
US7445673B2 (en) * 2004-05-18 2008-11-04 Lumilog Manufacturing gallium nitride substrates by lateral overgrowth through masks and devices fabricated thereof
JP4236264B2 (ja) * 2004-08-04 2009-03-11 キヤノン株式会社 スケジュール管理システムと、スケジュール管理サーバ及びスケジュール管理方法
FI20045482A0 (fi) * 2004-12-14 2004-12-14 Optogan Oy Matalamman dislokaatiotiheyden omaava puolijohdesubstraatti, ja menetelmä sen valmistamiseksi
EP1681712A1 (en) * 2005-01-13 2006-07-19 S.O.I. Tec Silicon on Insulator Technologies S.A. Method of producing substrates for optoelectronic applications
JP2007048869A (ja) * 2005-08-09 2007-02-22 Sony Corp ＧａＮ系半導体発光素子の製造方法
US7459380B2 (en) * 2006-05-05 2008-12-02 Applied Materials, Inc. Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
US7560364B2 (en) * 2006-05-05 2009-07-14 Applied Materials, Inc. Dislocation-specific lateral epitaxial overgrowth to reduce dislocation density of nitride films
KR100818452B1 (ko) * 2006-10-31 2008-04-01 삼성전기주식회사 Ⅲ족 질화물 반도체 박막 제조방법 및 이를 이용한 질화물반도체 소자 제조방법
WO2008141324A2 (en) 2007-05-14 2008-11-20 S.O.I.Tec Silicon On Insulator Technologies Methods for improving the quality of epitaxially-grown semiconductor materials

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040137732A1 (en) 2000-07-07 2004-07-15 Eric Frayssinet Process for producing an epitaxial layer of gallium nitride
KR20040070255A (ko) * 2001-12-21 2004-08-06 아익스트론 아게 비 ⅲ-ⅴ 기판상의 ⅲ-ⅴ 반도체층 증착방법
WO2007068756A1 (en) 2005-12-15 2007-06-21 Lumilog Process for growth of low dislocation density gan

Also Published As

Publication number Publication date
US7732306B2 (en) 2010-06-08
US20090091002A1 (en) 2009-04-09
KR20100040299A (ko) 2010-04-19
EP2171747B1 (en) 2016-07-13
CN101730926A (zh) 2010-06-09
JP2010534611A (ja) 2010-11-11
JP4945725B2 (ja) 2012-06-06
WO2009015337A1 (en) 2009-01-29
EP2171747A1 (en) 2010-04-07
CN101730926B (zh) 2012-09-19

Similar Documents

Publication Publication Date Title
KR101355593B1 (ko) 개선된 에피택시 재료들의 제조 방법
KR101374090B1 (ko) 에피택시 방법들과 그 방법들에 의하여 성장된 템플릿들
US7095062B2 (en) Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
US6521514B1 (en) Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
JP4486506B2 (ja) ハイドライド気相成長方法による転位密度の低い無極性窒化ガリウムの成長
EP1111663A2 (en) GaN-based compound semiconductor device and method of producing the same
JP2002343728A (ja) 窒化ガリウム結晶基板の製造方法及び窒化ガリウム結晶基板
US8591652B2 (en) Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy
WO2001059819A1 (en) Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated thereby
Davis et al. Conventional and pendeo-epitaxial growth of GaN (0 0 0 1) thin films on Si (1 1 1) substrates
KR20100022663A (ko) 질화물 반도체 기판 및 그 제조 방법
Tanaka et al. Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (0 0 1) Si substrate by metalorganic vapor phase epitaxy
JP2012121771A (ja) 窒化ガリウム基板

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20100122

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20111228

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130620

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20131030

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20140120

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20140121

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20170102

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20170102

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20180110

Year of fee payment: 5

PR1001 Payment of annual fee

Payment date: 20180110

Start annual number: 5

End annual number: 5

FPAY Annual fee payment

Payment date: 20190102

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20190102

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20200102

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20200102

Start annual number: 7

End annual number: 7

PR1001 Payment of annual fee

Payment date: 20230102

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20241226

Start annual number: 12

End annual number: 12