JP4945339B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4945339B2
JP4945339B2 JP2007164820A JP2007164820A JP4945339B2 JP 4945339 B2 JP4945339 B2 JP 4945339B2 JP 2007164820 A JP2007164820 A JP 2007164820A JP 2007164820 A JP2007164820 A JP 2007164820A JP 4945339 B2 JP4945339 B2 JP 4945339B2
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Japan
Prior art keywords
chip
collet
suction
leak
block
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JP2007164820A
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English (en)
Japanese (ja)
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JP2009004609A5 (https=
JP2009004609A (ja
Inventor
浩 牧
剛 横森
達行 大久保
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Renesas Electronics Corp
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Renesas Electronics Corp
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Filing date
Publication date
Priority to JP2007164820A priority Critical patent/JP4945339B2/ja
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to TW097119567A priority patent/TWI463580B/zh
Priority to US12/137,522 priority patent/US7888141B2/en
Priority to KR1020080057449A priority patent/KR101473492B1/ko
Priority to CN201210068756.0A priority patent/CN102623402B/zh
Priority to CN2008101286068A priority patent/CN101335191B/zh
Publication of JP2009004609A publication Critical patent/JP2009004609A/ja
Publication of JP2009004609A5 publication Critical patent/JP2009004609A5/ja
Priority to US12/987,779 priority patent/US8003495B2/en
Priority to US13/208,171 priority patent/US8222050B2/en
Application granted granted Critical
Publication of JP4945339B2 publication Critical patent/JP4945339B2/ja
Priority to US13/533,963 priority patent/US8372665B2/en
Priority to US13/742,788 priority patent/US8492173B2/en
Priority to US13/941,507 priority patent/US20130299098A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Die Bonding (AREA)
JP2007164820A 2007-06-19 2007-06-22 半導体集積回路装置の製造方法 Active JP4945339B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2007164820A JP4945339B2 (ja) 2007-06-22 2007-06-22 半導体集積回路装置の製造方法
TW097119567A TWI463580B (zh) 2007-06-19 2008-05-27 Manufacturing method of semiconductor integrated circuit device
US12/137,522 US7888141B2 (en) 2007-06-19 2008-06-11 Manufacturing method for semiconductor integrated device
KR1020080057449A KR101473492B1 (ko) 2007-06-19 2008-06-18 반도체 집적 회로 장치의 제조 방법
CN201210068756.0A CN102623402B (zh) 2007-06-19 2008-06-19 半导体集成电路装置的制造方法
CN2008101286068A CN101335191B (zh) 2007-06-19 2008-06-19 半导体集成电路装置的制造方法
US12/987,779 US8003495B2 (en) 2007-06-19 2011-01-10 Manufacturing method for semiconductor integrated device
US13/208,171 US8222050B2 (en) 2007-06-19 2011-08-11 Manufacturing method for semiconductor integrated device
US13/533,963 US8372665B2 (en) 2007-06-19 2012-06-26 Manufacturing method for semiconductor integrated device
US13/742,788 US8492173B2 (en) 2007-06-19 2013-01-16 Manufacturing method for semiconductor integrated device
US13/941,507 US20130299098A1 (en) 2007-06-19 2013-07-14 Manufacturing method for semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007164820A JP4945339B2 (ja) 2007-06-22 2007-06-22 半導体集積回路装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012047743A Division JP2012156517A (ja) 2012-03-05 2012-03-05 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2009004609A JP2009004609A (ja) 2009-01-08
JP2009004609A5 JP2009004609A5 (https=) 2010-06-17
JP4945339B2 true JP4945339B2 (ja) 2012-06-06

Family

ID=40320662

Family Applications (1)

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JP2007164820A Active JP4945339B2 (ja) 2007-06-19 2007-06-22 半導体集積回路装置の製造方法

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JP (1) JP4945339B2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015179813A (ja) * 2014-02-26 2015-10-08 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
KR20230096115A (ko) 2020-12-08 2023-06-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5491748B2 (ja) * 2009-03-05 2014-05-14 株式会社東芝 半導体装置の製造装置および半導体装置の製造方法
JP6653273B2 (ja) * 2017-01-26 2020-02-26 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
JP6967411B2 (ja) * 2017-09-19 2021-11-17 ファスフォードテクノロジ株式会社 半導体製造装置、半導体装置の製造方法およびコレット
EP3569370A1 (en) * 2018-05-18 2019-11-20 SUPSI (Scuola Universitaria Professionale Della Svizzera Italiana) Device for gripping and welding electronic components and associated actuating head, robot and method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0620092B2 (ja) * 1984-09-11 1994-03-16 ロ−ム株式会社 半導体ペレットのダイボンディング用チャック装置
JPH07273493A (ja) * 1994-03-30 1995-10-20 Hitachi Techno Eng Co Ltd 搭載機
JPH1145930A (ja) * 1997-07-24 1999-02-16 Toshiba Electron Eng Corp 吸着ヘッド
JP2005150311A (ja) * 2003-11-13 2005-06-09 Nec Machinery Corp チップマウント方法及び装置
JP4644481B2 (ja) * 2004-12-24 2011-03-02 Ｊｕｋｉ株式会社 電子部品圧着搭載装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015179813A (ja) * 2014-02-26 2015-10-08 株式会社新川 半導体ダイのピックアップ装置及びピックアップ方法
KR20230096115A (ko) 2020-12-08 2023-06-29 가부시키가이샤 신가와 반도체 다이의 픽업 장치

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