JP4943850B2 - 炭化ケイ素層を形成するホモエピタキシャル成長方法 - Google Patents

炭化ケイ素層を形成するホモエピタキシャル成長方法 Download PDF

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JP4943850B2
JP4943850B2 JP2006532485A JP2006532485A JP4943850B2 JP 4943850 B2 JP4943850 B2 JP 4943850B2 JP 2006532485 A JP2006532485 A JP 2006532485A JP 2006532485 A JP2006532485 A JP 2006532485A JP 4943850 B2 JP4943850 B2 JP 4943850B2
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silicon
growth
silicon carbide
containing component
semiconductor device
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JP2007500950A (ja
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クラエス エリック コーディナ，オロフ
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カラカル，インコーポレイティド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006532485A 2003-05-08 2004-04-27 炭化ケイ素層を形成するホモエピタキシャル成長方法 Expired - Fee Related JP4943850B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/431,819 2003-05-08
US10/431,819 US7247513B2 (en) 2003-05-08 2003-05-08 Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
PCT/US2004/013058 WO2004102619A2 (en) 2003-05-08 2004-04-27 Chemical vapor deposition epitaxial growth

Publications (3)

Publication Number Publication Date
JP2007500950A JP2007500950A (ja) 2007-01-18
JP2007500950A5 JP2007500950A5 (https=) 2007-06-21
JP4943850B2 true JP4943850B2 (ja) 2012-05-30

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JP2006532485A Expired - Fee Related JP4943850B2 (ja) 2003-05-08 2004-04-27 炭化ケイ素層を形成するホモエピタキシャル成長方法

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US (1) US7247513B2 (https=)
EP (1) EP1620294A4 (https=)
JP (1) JP4943850B2 (https=)
WO (1) WO2004102619A2 (https=)

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US7414268B2 (en) 2005-05-18 2008-08-19 Cree, Inc. High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US20070169687A1 (en) * 2006-01-26 2007-07-26 Caracal, Inc. Silicon carbide formation by alternating pulses
CN101490315A (zh) 2006-07-19 2009-07-22 陶氏康宁公司 生产具有改善的载流子寿命的基底的方法
DE102006052586B4 (de) * 2006-11-08 2008-07-03 Schott Solar Gmbh Verfahren und Vorrichtung zur Reinigung der Abgase einer Siliziumdünnschicht-Produktionsanlage
US7901508B2 (en) * 2007-01-24 2011-03-08 Widetronix, Inc. Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
US20080173239A1 (en) * 2007-01-24 2008-07-24 Yuri Makarov Method, system, and apparatus for the growth of SiC and related or similar material, by chemical vapor deposition, using precursors in modified cold-wall reactor
WO2008100917A1 (en) * 2007-02-16 2008-08-21 Caracal, Inc. Epitaxial growth system for fast heating and cooling
US8088222B2 (en) * 2007-07-27 2012-01-03 Widetronix Inc. Method, system, and apparatus for the growth of on-axis SiC and similar semiconductor materials
US8221546B2 (en) * 2008-03-26 2012-07-17 Ss Sc Ip, Llc Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby
US8465799B2 (en) * 2008-09-18 2013-06-18 International Business Machines Corporation Method for preparation of flat step-free silicon carbide surfaces
DE102009002129A1 (de) * 2009-04-02 2010-10-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hartstoffbeschichtete Körper und Verfahren zur Herstellung hartstoffbeschichteter Körper
US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
SE536605C2 (sv) * 2012-01-30 2014-03-25 Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi
CN116613056B (zh) * 2023-07-21 2023-10-10 瀚天天成电子科技(厦门)股份有限公司 一种降低碳化硅外延薄膜表面缺陷的方法

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JPS4937040B1 (https=) * 1967-10-23 1974-10-04
JPH07183231A (ja) * 1993-12-21 1995-07-21 Mitsubishi Materials Corp 半導体基板およびその製造方法
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US3925577A (en) * 1972-11-24 1975-12-09 Westinghouse Electric Corp Silicon carbide coated graphite members and process for producing the same
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JPH07111957B2 (ja) * 1984-03-28 1995-11-29 圭弘 浜川 半導体の製法
US4865659A (en) * 1986-11-27 1989-09-12 Sharp Kabushiki Kaisha Heteroepitaxial growth of SiC on Si
US5248385A (en) * 1991-06-12 1993-09-28 The United States Of America, As Represented By The Administrator, National Aeronautics And Space Administration Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers
JPH051380A (ja) * 1991-06-24 1993-01-08 Hoya Corp 炭化ケイ素の成膜方法
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JP2000001398A (ja) * 1998-06-09 2000-01-07 Fuji Electric Co Ltd 炭化けい素半導体基板の製造方法

Also Published As

Publication number Publication date
EP1620294A4 (en) 2009-07-08
US20040222501A1 (en) 2004-11-11
US7247513B2 (en) 2007-07-24
EP1620294A2 (en) 2006-02-01
WO2004102619A2 (en) 2004-11-25
JP2007500950A (ja) 2007-01-18
WO2004102619A3 (en) 2005-09-15

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