JP4938961B2 - 撮像装置、放射線撮像装置及び放射線撮像システム - Google Patents

撮像装置、放射線撮像装置及び放射線撮像システム Download PDF

Info

Publication number
JP4938961B2
JP4938961B2 JP2003381372A JP2003381372A JP4938961B2 JP 4938961 B2 JP4938961 B2 JP 4938961B2 JP 2003381372 A JP2003381372 A JP 2003381372A JP 2003381372 A JP2003381372 A JP 2003381372A JP 4938961 B2 JP4938961 B2 JP 4938961B2
Authority
JP
Japan
Prior art keywords
electrode
wiring
conversion element
tft
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003381372A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004179645A5 (enrdf_load_stackoverflow
JP2004179645A (ja
Inventor
稔子 森井
実 渡辺
正和 森下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003381372A priority Critical patent/JP4938961B2/ja
Publication of JP2004179645A publication Critical patent/JP2004179645A/ja
Publication of JP2004179645A5 publication Critical patent/JP2004179645A5/ja
Application granted granted Critical
Publication of JP4938961B2 publication Critical patent/JP4938961B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Lasers (AREA)
  • Light Receiving Elements (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2003381372A 2002-11-13 2003-11-11 撮像装置、放射線撮像装置及び放射線撮像システム Expired - Fee Related JP4938961B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003381372A JP4938961B2 (ja) 2002-11-13 2003-11-11 撮像装置、放射線撮像装置及び放射線撮像システム

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002329653 2002-11-13
JP2002329653 2002-11-13
JP2003381372A JP4938961B2 (ja) 2002-11-13 2003-11-11 撮像装置、放射線撮像装置及び放射線撮像システム

Publications (3)

Publication Number Publication Date
JP2004179645A JP2004179645A (ja) 2004-06-24
JP2004179645A5 JP2004179645A5 (enrdf_load_stackoverflow) 2006-12-28
JP4938961B2 true JP4938961B2 (ja) 2012-05-23

Family

ID=32716188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003381372A Expired - Fee Related JP4938961B2 (ja) 2002-11-13 2003-11-11 撮像装置、放射線撮像装置及び放射線撮像システム

Country Status (1)

Country Link
JP (1) JP4938961B2 (enrdf_load_stackoverflow)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208810B2 (en) * 2004-07-01 2007-04-24 Varian Medical Technologies, Inc. Integrated MIS photosensitive device using continuous films
JP5013754B2 (ja) * 2005-06-13 2012-08-29 キヤノン株式会社 電磁波検出装置、放射線検出装置、放射線検出システム及びレーザ加工方法
JP5159065B2 (ja) 2005-08-31 2013-03-06 キヤノン株式会社 放射線検出装置、放射線撮像装置および放射線撮像システム
RU2351038C2 (ru) * 2005-08-31 2009-03-27 Кэнон Кабусики Кайся Устройство обнаружения излучения, устройство формирования изображения излучения и система формирования изображения излучения
US7566899B2 (en) * 2005-12-21 2009-07-28 Palo Alto Research Center Incorporated Organic thin-film transistor backplane with multi-layer contact structures and data lines
JP2007201246A (ja) 2006-01-27 2007-08-09 Canon Inc 光電変換装置及び放射線撮像装置
JP4498283B2 (ja) 2006-01-30 2010-07-07 キヤノン株式会社 撮像装置、放射線撮像装置及びこれらの製造方法
JP5286691B2 (ja) * 2007-05-14 2013-09-11 三菱電機株式会社 フォトセンサー
JP2009089078A (ja) * 2007-09-28 2009-04-23 Sony Corp 固体撮像装置及び撮像装置
JP5253799B2 (ja) * 2007-12-17 2013-07-31 三菱電機株式会社 フォトセンサー、及びフォトセンサーの製造方法
JP5262212B2 (ja) * 2008-03-20 2013-08-14 三菱電機株式会社 フォトセンサーアレイ基板
JP5388488B2 (ja) * 2008-06-19 2014-01-15 富士フイルム株式会社 電磁波検出素子
WO2010058369A2 (en) * 2008-11-24 2010-05-27 Philips Intellectual Property & Standards Gmbh X-ray detector
JP2010147407A (ja) * 2008-12-22 2010-07-01 Toshiba Corp 放射線検出器およびその欠陥補正方法
JP2011108890A (ja) * 2009-11-18 2011-06-02 Fujifilm Corp 放射線検出素子
JP5923972B2 (ja) 2011-12-26 2016-05-25 三菱電機株式会社 光電変換装置の製造方法および当該光電変換装置を用いた撮像装置の製造方法
JP6053379B2 (ja) * 2012-08-06 2016-12-27 キヤノン株式会社 検出装置の製造方法、検出装置及び検出システム
JP5726931B2 (ja) * 2013-02-18 2015-06-03 富士フイルム株式会社 電磁波検出素子
CN110392927B (zh) * 2017-03-16 2023-04-18 夏普株式会社 摄像装置和x射线摄像装置
CN113299593B (zh) * 2021-05-21 2023-01-10 錼创显示科技股份有限公司 接着层结构以及半导体结构
TWI808422B (zh) 2021-05-21 2023-07-11 錼創顯示科技股份有限公司 接著層結構以及半導體結構

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06120474A (ja) * 1991-08-16 1994-04-28 Fuji Xerox Co Ltd ２次元密着型イメージセンサ
JP3719786B2 (ja) * 1996-09-11 2005-11-24 株式会社東芝 光検出器の製造方法
JP4011734B2 (ja) * 1998-06-02 2007-11-21 キヤノン株式会社 ２次元光センサ、それを用いた放射線検出装置及び放射線診断システム
JP3469143B2 (ja) * 1999-11-02 2003-11-25 シャープ株式会社 アクティブマトリクス基板及びそれを備えた二次元画像検出器
JP2002009272A (ja) * 2000-06-26 2002-01-11 Canon Inc 光電変換装置及びそのリペア方法
JP3708440B2 (ja) * 2001-01-30 2005-10-19 シャープ株式会社 イメージセンサ

Also Published As

Publication number Publication date
JP2004179645A (ja) 2004-06-24

Similar Documents

Publication Publication Date Title
JP4938961B2 (ja) 撮像装置、放射線撮像装置及び放射線撮像システム
US7126158B2 (en) Image pickup apparatus, radiation image pickup apparatus and radiation image pickup system
US8067743B2 (en) Imaging apparatus and radiation imaging apparatus
JP5159065B2 (ja) 放射線検出装置、放射線撮像装置および放射線撮像システム
CN100416841C (zh) 固态图像拾取设备和辐射图像拾取设备
JP5280671B2 (ja) 画像検出器および放射線検出システム
JP4498283B2 (ja) 撮像装置、放射線撮像装置及びこれらの製造方法
US7521684B2 (en) Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
US6956216B2 (en) Semiconductor device, radiation detection device, and radiation detection system
US20060249763A1 (en) Radiation image pickup device
JP2000323698A (ja) アクティブマトリクス基板、その製造方法、及び、該基板を用いたイメージセンサ
JP5398564B2 (ja) 放射線検出素子
JP2000148037A (ja) 半導体装置及びその製造方法
JP4067055B2 (ja) 撮像装置及びその製造方法、放射線撮像装置、放射線撮像システム
JP2014116429A (ja) 撮像装置及び撮像表示システム
US6642494B1 (en) Photoelectric conversion apparatus, production method thereof, and information processing apparatus having the photoelectric conversion apparatus
JP2004296654A (ja) 放射線撮像装置
JP2004311593A (ja) 電磁波検出器およびアクティブマトリクス基板
US6600157B2 (en) Semiconductor device, and radiation detection device and radiation detection system having same
JP4054612B2 (ja) 放射線撮像装置
KR102556234B1 (ko) 엑스레이 검출기용 어레이기판 및 이를 포함하는 엑스레이 검출기
JP5677353B2 (ja) 放射線検出装置および放射線撮像システム
JP3467027B2 (ja) 半導体装置及び放射線検出装置並びに放射線撮像システム
JP4018461B2 (ja) 放射線検出装置及びその製造方法並びに放射線撮像システム
JP2003319270A (ja) 光感知又は放射線感知センサからなる撮像装置及びその検査方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061109

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20061109

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080207

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090326

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20090427

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20091001

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100813

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101012

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110822

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111020

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120220

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120224

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150302

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees