JP4919259B2 - マスクブランク及びフォトマスク - Google Patents

マスクブランク及びフォトマスク Download PDF

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Publication number
JP4919259B2
JP4919259B2 JP2006094482A JP2006094482A JP4919259B2 JP 4919259 B2 JP4919259 B2 JP 4919259B2 JP 2006094482 A JP2006094482 A JP 2006094482A JP 2006094482 A JP2006094482 A JP 2006094482A JP 4919259 B2 JP4919259 B2 JP 4919259B2
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JP
Japan
Prior art keywords
film
metal silicide
light
mask blank
fluoride
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Active
Application number
JP2006094482A
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English (en)
Japanese (ja)
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JP2007271720A (ja
Inventor
勝 三井
理 杉原
正男 牛田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Priority to JP2006094482A priority Critical patent/JP4919259B2/ja
Priority to KR1020070031343A priority patent/KR101145453B1/ko
Publication of JP2007271720A publication Critical patent/JP2007271720A/ja
Priority to KR1020110064765A priority patent/KR101261155B1/ko
Application granted granted Critical
Publication of JP4919259B2 publication Critical patent/JP4919259B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2006094482A 2006-03-30 2006-03-30 マスクブランク及びフォトマスク Active JP4919259B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006094482A JP4919259B2 (ja) 2006-03-30 2006-03-30 マスクブランク及びフォトマスク
KR1020070031343A KR101145453B1 (ko) 2006-03-30 2007-03-30 마스크 블랭크 및 포토마스크
KR1020110064765A KR101261155B1 (ko) 2006-03-30 2011-06-30 마스크 블랭크 및 포토마스크

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006094482A JP4919259B2 (ja) 2006-03-30 2006-03-30 マスクブランク及びフォトマスク

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011245183A Division JP5229838B2 (ja) 2011-11-09 2011-11-09 マスクブランク及びフォトマスク

Publications (2)

Publication Number Publication Date
JP2007271720A JP2007271720A (ja) 2007-10-18
JP4919259B2 true JP4919259B2 (ja) 2012-04-18

Family

ID=38674607

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006094482A Active JP4919259B2 (ja) 2006-03-30 2006-03-30 マスクブランク及びフォトマスク

Country Status (2)

Country Link
JP (1) JP4919259B2 (ko)
KR (2) KR101145453B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7442542B2 (ja) 2021-04-05 2024-03-04 東芝三菱電機産業システム株式会社 電力変換装置

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5219201B2 (ja) * 2008-07-31 2013-06-26 Ｈｏｙａ株式会社 フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法
JP5219200B2 (ja) * 2008-07-31 2013-06-26 Ｈｏｙａ株式会社 フォトマスク、フォトマスク用ブランク、フォトマスクの製造方法、及びパターン転写方法
EP2378360A4 (en) * 2009-01-14 2014-04-02 Nat Ct Nanoscience Ncnst China METALLIC OPTICAL BLACK WHITE MASK AND METHOD FOR THE PRODUCTION THEREOF
JP2010175697A (ja) * 2009-01-28 2010-08-12 Toppan Printing Co Ltd 濃度分布マスク
TWI422966B (zh) * 2009-07-30 2014-01-11 Hoya Corp 多調式光罩、光罩基底、多調式光罩之製造方法、及圖案轉印方法
KR101921759B1 (ko) * 2011-09-21 2018-11-23 호야 가부시키가이샤 전사용 마스크의 제조 방법
JP6324756B2 (ja) * 2013-03-19 2018-05-16 Hoya株式会社 位相シフトマスクブランク及びその製造方法、位相シフトマスクの製造方法、並びに表示装置の製造方法
US11226549B2 (en) 2015-08-31 2022-01-18 Hoya Corporation Mask blank, phase shift mask, method for manufacturing thereof, and method for manufacturing semiconductor device
KR102093107B1 (ko) * 2015-12-07 2020-03-25 (주)에스앤에스텍 다중 전자빔 리소그래피용 블랭크 마스크 및 포토마스크
JP6119836B2 (ja) * 2015-12-21 2017-04-26 大日本印刷株式会社 フォトマスク
JP6674809B2 (ja) * 2016-03-22 2020-04-01 アルバック成膜株式会社 位相シフトマスクブランクスの洗浄装置、位相シフトマスクブランクスの製造方法
JP7298556B2 (ja) * 2020-06-30 2023-06-27 信越化学工業株式会社 フォトマスクブランクの製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS623257A (ja) * 1985-06-28 1987-01-09 Toshiba Corp マスクパタ−ンの形成方法およびこれに使用するマスク基板
JPS62218585A (ja) * 1985-10-31 1987-09-25 Hoya Corp フオトマスクの製造方法
JPS63212937A (ja) * 1987-02-28 1988-09-05 Hoya Corp フオトマスクブランクとフオトマスク
JPH061367B2 (ja) * 1987-03-03 1994-01-05 三菱電機株式会社 フオトマスク
JPH0644146B2 (ja) * 1987-03-03 1994-06-08 三菱電機株式会社 フオトマスク
JP3161474B2 (ja) * 1991-06-20 2001-04-25 凸版印刷株式会社 位相シフトマスク及びその製造方法
JP3034704B2 (ja) * 1992-08-31 2000-04-17 ホーヤ株式会社 位相シフトマスク及びその製造方法
JPH0798493A (ja) * 1993-09-28 1995-04-11 Toppan Printing Co Ltd 位相シフトマスク及びその製造方法
JPH07110571A (ja) * 1993-10-12 1995-04-25 Toppan Printing Co Ltd 光学マスクおよびマスクブランク
JPH07181666A (ja) * 1993-12-22 1995-07-21 Toppan Printing Co Ltd 位相シフトマスク
JPH0876353A (ja) * 1994-09-08 1996-03-22 Nec Corp 位相シフトマスクの製造方法
KR100560969B1 (ko) * 1998-12-31 2006-06-23 삼성전자주식회사 액정표시장치용광마스크의제조방법
JP2002189281A (ja) * 2000-12-19 2002-07-05 Hoya Corp グレートーンマスク及びその製造方法
JP2003195479A (ja) * 2001-12-28 2003-07-09 Hoya Corp ハーフトーン型位相シフトマスクブランク、及びハーフトーン型位相シフトマスクの製造方法
US7022436B2 (en) * 2003-01-14 2006-04-04 Asml Netherlands B.V. Embedded etch stop for phase shift masks and planar phase shift masks to reduce topography induced and wave guide effects
KR20050076827A (ko) * 2004-01-22 2005-07-28 쇼오트 아게 초 고투과율 위상편이 마스크 블랭크
JP2005208660A (ja) * 2004-01-22 2005-08-04 Schott Ag 超高透過率の位相シフト型のマスクブランク
EP1584979A1 (en) * 2004-04-08 2005-11-15 Schott AG Mask blank having a protection layer
JP4407815B2 (ja) * 2004-09-10 2010-02-03 信越化学工業株式会社 フォトマスクブランク及びフォトマスク

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7442542B2 (ja) 2021-04-05 2024-03-04 東芝三菱電機産業システム株式会社 電力変換装置

Also Published As

Publication number Publication date
KR20070098702A (ko) 2007-10-05
JP2007271720A (ja) 2007-10-18
KR20110082505A (ko) 2011-07-19
KR101261155B1 (ko) 2013-06-24
KR101145453B1 (ko) 2012-06-28

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