JP4914514B2 - 蛍光x線分析装置および方法 - Google Patents
蛍光x線分析装置および方法 Download PDFInfo
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- JP4914514B2 JP4914514B2 JP2010151828A JP2010151828A JP4914514B2 JP 4914514 B2 JP4914514 B2 JP 4914514B2 JP 2010151828 A JP2010151828 A JP 2010151828A JP 2010151828 A JP2010151828 A JP 2010151828A JP 4914514 B2 JP4914514 B2 JP 4914514B2
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- 238000000034 method Methods 0.000 title claims description 14
- 238000004876 x-ray fluorescence Methods 0.000 title claims description 13
- 238000005259 measurement Methods 0.000 claims description 53
- 239000013078 crystal Substances 0.000 claims description 19
- 238000002441 X-ray diffraction Methods 0.000 claims description 15
- 238000001514 detection method Methods 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000004458 analytical method Methods 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/076—X-ray fluorescence
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/33—Accessories, mechanical or electrical features scanning, i.e. relative motion for measurement of successive object-parts
- G01N2223/3306—Accessories, mechanical or electrical features scanning, i.e. relative motion for measurement of successive object-parts object rotates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/60—Specific applications or type of materials
- G01N2223/611—Specific applications or type of materials patterned objects; electronic devices
- G01N2223/6116—Specific applications or type of materials patterned objects; electronic devices semiconductor wafer
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- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
2 1次X線
4 2次X線
7 検出手段
8 試料台
11 回転手段
12 平行移動手段
15 制御手段
16 表示手段
17 選択手段
S 試料
Claims (4)
- 結晶構造を有する試料が載置される試料台と、
試料に1次X線を照射するX線源と、
試料から発生する2次X線を検出する検出手段と、
試料測定面に垂直な軸を中心に試料台を回転させる回転手段と、
前記回転手段が停止した状態で試料測定面の半分の任意の位置に1次X線を照射させるように試料台を平行移動させる平行移動手段と、
試料を試料の所定点のまわりに前記回転手段によって360°回転させながら前記X線源から1次X線を照射させ、試料から発生して前記検出手段に入射する2次X線の強度を試料の回転角度と対応させた回折パターンとして表示手段に表示させ、その回折パターンを記憶する制御手段と、
測定者が、前記表示手段に表示された回折パターンに基づいて、隣り合う間隔が180°未満の角度であって、回折X線を回避できる回避角度を少なくとも3つ選択するための選択手段とを備える蛍光X線分析装置であって、
前記制御手段が、前記選択手段によって選択された回避角度を記憶し、試料の測定点に応じて、その記憶した回避角度の中から、前記試料台、回転手段および平行移動手段が当該蛍光X線分析装置の他の構造物と干渉しない回避角度を読み出して、その回避角度に試料を設定するように前記回転手段を制御する蛍光X線分析装置。 - 請求項1に記載の蛍光X線分析装置において、
前記表示手段が、前記選択手段によって選択された回避角度の位置を示す回避角度マークを、前記制御手段に記憶された回折パターンおよび/または試料の測定面画像とともに表示する蛍光X線分析装置。 - 請求項1に記載の蛍光X線分析装置を用い、
隣り合う間隔が180°未満の角度であって、回折X線を回避できる回避角度を少なくとも3つ選択し、
前記制御手段により回避角度を設定された試料について、その測定面に平行な面内で移動させて試料の測定面全域を分析する蛍光X線分析方法。 - 請求項3に記載の蛍光X線分析方法において、
前記表示手段に、前記選択手段を用いて選択した回避角度の位置を示す回避角度マークを、前記制御手段に記憶された回折パターンおよび/または試料の測定面画像とともに表示させる蛍光X線分析方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010151828A JP4914514B2 (ja) | 2010-07-02 | 2010-07-02 | 蛍光x線分析装置および方法 |
US13/807,896 US8644450B2 (en) | 2010-07-02 | 2011-04-21 | X-ray fluorescence spectrometer and X-ray fluorescence analyzing method |
CN201180031886.0A CN102959387B (zh) | 2010-07-02 | 2011-04-21 | 荧光x射线分析装置及方法 |
PCT/JP2011/059797 WO2012002030A1 (ja) | 2010-07-02 | 2011-04-21 | 蛍光x線分析装置および方法 |
KR1020137002754A KR101277379B1 (ko) | 2010-07-02 | 2011-04-21 | 형광 x선 분석 장치 및 방법 |
EP11800500.8A EP2589956B1 (en) | 2010-07-02 | 2011-04-21 | X-ray fluorescence analyzing method |
TW100123129A TWI388821B (zh) | 2010-07-02 | 2011-06-30 | 螢光x射線分析裝置及方法 |
Applications Claiming Priority (1)
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JP2010151828A JP4914514B2 (ja) | 2010-07-02 | 2010-07-02 | 蛍光x線分析装置および方法 |
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JP2012013606A JP2012013606A (ja) | 2012-01-19 |
JP4914514B2 true JP4914514B2 (ja) | 2012-04-11 |
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Country Status (7)
Country | Link |
---|---|
US (1) | US8644450B2 (ja) |
EP (1) | EP2589956B1 (ja) |
JP (1) | JP4914514B2 (ja) |
KR (1) | KR101277379B1 (ja) |
CN (1) | CN102959387B (ja) |
TW (1) | TWI388821B (ja) |
WO (1) | WO2012002030A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5806150B2 (ja) * | 2012-03-13 | 2015-11-10 | 株式会社ジャパンディスプレイ | 表示装置 |
US9778213B2 (en) * | 2013-08-19 | 2017-10-03 | Kla-Tencor Corporation | Metrology tool with combined XRF and SAXS capabilities |
EP3069126A4 (en) * | 2013-11-12 | 2017-06-14 | X-Ray Optical Systems, Inc. | Non-homogeneous sample scanning apparatus, and x-ray analyzer applications thereof |
DE102014102684A1 (de) * | 2014-02-28 | 2015-09-03 | Helmut Fischer GmbH Institut für Elektronik und Messtechnik | Verfahren zur Messung eines Messobjektes mittels Röntgenfluoreszenz |
JP2015184039A (ja) * | 2014-03-20 | 2015-10-22 | 株式会社日立ハイテクサイエンス | X線分析装置 |
JP2016099308A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社日立ハイテクサイエンス | 蛍光x線分析装置及び蛍光x線分析方法 |
JP6258845B2 (ja) * | 2014-12-19 | 2018-01-10 | 株式会社日立ハイテクノロジーズ | X線検査方法及び装置 |
CN104807845B (zh) * | 2015-04-21 | 2018-05-08 | 南京航空航天大学 | 一种快速检测化妆品中重金属含量的掠入式x荧光测量装置 |
JP6501230B2 (ja) * | 2016-03-08 | 2019-04-17 | 株式会社リガク | 多元素同時型蛍光x線分析装置および多元素同時蛍光x線分析方法 |
US10705243B2 (en) | 2018-01-29 | 2020-07-07 | Korea Atomic Energy Research Institute | Nondestructive inspection system |
KR102157233B1 (ko) * | 2020-02-20 | 2020-09-17 | 한국원자력연구원 | 중성자선과 엑스선을 이용하는 비파괴 검사 시스템 |
WO2023145101A1 (ja) | 2022-01-31 | 2023-08-03 | キヤノンアネルバ株式会社 | 検査装置および検査方法 |
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JPH04161844A (ja) * | 1990-10-26 | 1992-06-05 | Fujitsu Ltd | 蛍光x線分析装置 |
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2010
- 2010-07-02 JP JP2010151828A patent/JP4914514B2/ja active Active
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2011
- 2011-04-21 WO PCT/JP2011/059797 patent/WO2012002030A1/ja active Application Filing
- 2011-04-21 KR KR1020137002754A patent/KR101277379B1/ko active IP Right Grant
- 2011-04-21 CN CN201180031886.0A patent/CN102959387B/zh active Active
- 2011-04-21 US US13/807,896 patent/US8644450B2/en active Active
- 2011-04-21 EP EP11800500.8A patent/EP2589956B1/en active Active
- 2011-06-30 TW TW100123129A patent/TWI388821B/zh active
Also Published As
Publication number | Publication date |
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EP2589956A4 (en) | 2014-04-02 |
WO2012002030A1 (ja) | 2012-01-05 |
KR20130019030A (ko) | 2013-02-25 |
EP2589956B1 (en) | 2015-06-03 |
KR101277379B1 (ko) | 2013-06-20 |
TW201221947A (en) | 2012-06-01 |
US8644450B2 (en) | 2014-02-04 |
CN102959387A (zh) | 2013-03-06 |
JP2012013606A (ja) | 2012-01-19 |
EP2589956A1 (en) | 2013-05-08 |
CN102959387B (zh) | 2014-07-23 |
US20130101085A1 (en) | 2013-04-25 |
TWI388821B (zh) | 2013-03-11 |
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