JP4910664B2 - Ｉｉｉ−ｖ族半導体素子の製造方法 - Google Patents
Ｉｉｉ−ｖ族半導体素子の製造方法 Download PDFInfo
- Publication number
- JP4910664B2 JP4910664B2 JP2006323949A JP2006323949A JP4910664B2 JP 4910664 B2 JP4910664 B2 JP 4910664B2 JP 2006323949 A JP2006323949 A JP 2006323949A JP 2006323949 A JP2006323949 A JP 2006323949A JP 4910664 B2 JP4910664 B2 JP 4910664B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- semiconductor element
- face
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims description 80
- 238000004519 manufacturing process Methods 0.000 title claims description 28
- 238000000034 method Methods 0.000 title claims description 15
- 239000000758 substrate Substances 0.000 claims description 70
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 230000001681 protective effect Effects 0.000 claims description 39
- 238000002844 melting Methods 0.000 claims description 31
- 230000008018 melting Effects 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 19
- 230000003405 preventing effect Effects 0.000 claims description 16
- 150000004767 nitrides Chemical class 0.000 claims description 15
- 229910015365 Au—Si Inorganic materials 0.000 claims description 4
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 4
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 4
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 4
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 4
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 20
- 239000010980 sapphire Substances 0.000 description 20
- 230000002265 prevention Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000001579 optical reflectometry Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006323949A JP4910664B2 (ja) | 2006-11-30 | 2006-11-30 | Ｉｉｉ−ｖ族半導体素子の製造方法 |
| US11/987,420 US7781241B2 (en) | 2006-11-30 | 2007-11-29 | Group III-V semiconductor device and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006323949A JP4910664B2 (ja) | 2006-11-30 | 2006-11-30 | Ｉｉｉ−ｖ族半導体素子の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008140871A JP2008140871A (ja) | 2008-06-19 |
| JP2008140871A5 JP2008140871A5 (enExample) | 2009-03-19 |
| JP4910664B2 true JP4910664B2 (ja) | 2012-04-04 |
Family
ID=39602067
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006323949A Expired - Fee Related JP4910664B2 (ja) | 2006-11-30 | 2006-11-30 | Ｉｉｉ−ｖ族半導体素子の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4910664B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011040425A (ja) * | 2009-08-06 | 2011-02-24 | Stanley Electric Co Ltd | 半導体発光装置及び半導体発光装置の製造方法 |
| JP5596375B2 (ja) * | 2010-03-08 | 2014-09-24 | スタンレー電気株式会社 | 半導体発光素子の製造方法及び半導体発光素子 |
| JP2012195435A (ja) * | 2011-03-16 | 2012-10-11 | Stanley Electric Co Ltd | 半導体発光素子の製造方法 |
| JP5739698B2 (ja) * | 2011-03-22 | 2015-06-24 | スタンレー電気株式会社 | 半導体素子の製造方法 |
| JP5992702B2 (ja) * | 2012-03-21 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子、および、車両用灯具、ならびに、半導体発光素子の製造方法 |
| WO2016120400A1 (en) * | 2015-01-30 | 2016-08-04 | Osram Opto Semiconductors Gmbh | Method for producing a semiconductor component and semiconductor component |
| JP6936867B2 (ja) * | 2017-11-10 | 2021-09-22 | シャープ株式会社 | 半導体モジュール、表示装置、及び半導体モジュールの製造方法 |
| WO2023010292A1 (zh) * | 2021-08-03 | 2023-02-09 | 重庆康佳光电技术研究院有限公司 | 发光器件及发光器件的制作方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002009333A (ja) * | 2000-06-23 | 2002-01-11 | Hitachi Cable Ltd | 発光ダイオードアレイの製造方法 |
| US20030189215A1 (en) * | 2002-04-09 | 2003-10-09 | Jong-Lam Lee | Method of fabricating vertical structure leds |
| WO2004068572A2 (de) * | 2003-01-31 | 2004-08-12 | Osram Opto Semiconductors Gmbh | Verfahren zur herstellung eines halbleiterbauelements |
| KR100595884B1 (ko) * | 2004-05-18 | 2006-07-03 | 엘지전자 주식회사 | 질화물 반도체 소자 제조 방법 |
| KR100667508B1 (ko) * | 2004-11-08 | 2007-01-10 | 엘지전자 주식회사 | 발광 소자 및 그의 제조방법 |
| JP2006319248A (ja) * | 2005-05-16 | 2006-11-24 | Sharp Corp | 窒化物半導体発光素子 |
-
2006
- 2006-11-30 JP JP2006323949A patent/JP4910664B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008140871A (ja) | 2008-06-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2008186959A (ja) | Ｉｉｉ−ｖ族半導体素子、およびその製造方法 | |
| US9559252B2 (en) | Substrate removal process for high light extraction LEDs | |
| JP6221926B2 (ja) | 半導体発光素子およびその製造方法 | |
| JP5376467B2 (ja) | 垂直構造窒化ガリウム系発光ダイオ−ド素子及びその製造方法 | |
| JP4290745B2 (ja) | Ｉｉｉ−ｖ族半導体素子の製造方法 | |
| US20110133216A1 (en) | Method of manufacturing semiconductor light emitting device and stacked structure body | |
| JP2010027643A (ja) | 窒化物半導体発光素子および窒化物半導体発光素子の製造方法 | |
| US7781241B2 (en) | Group III-V semiconductor device and method for producing the same | |
| JP2007158133A (ja) | Ｉｉｉ族窒化物系化合物半導体素子の製造方法 | |
| JP5658604B2 (ja) | 半導体発光素子の製造方法 | |
| JP4910664B2 (ja) | Ｉｉｉ−ｖ族半導体素子の製造方法 | |
| JP4835409B2 (ja) | Ｉｉｉ−ｖ族半導体素子、およびその製造方法 | |
| JP2008042143A (ja) | Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法 | |
| US9159871B2 (en) | Light-emitting device having a reflective structure and a metal mesa and the manufacturing method thereof | |
| JP4920249B2 (ja) | Ｉｉｉ族窒化物系化合物半導体発光素子 | |
| JP2008140871A5 (enExample) | ||
| TWI583023B (zh) | 用於一半導體發光裝置的接觸件 | |
| JP4738999B2 (ja) | 半導体光素子の製造方法 | |
| JP2008140841A (ja) | 発光素子 | |
| JP5361569B2 (ja) | 半導体発光素子及びその製造方法 | |
| JP5214175B2 (ja) | 窒化物半導体発光素子および発光素子の製造方法 | |
| JP2007158131A (ja) | Ｉｉｉ族窒化物系化合物半導体光素子 | |
| JP4867223B2 (ja) | 半導体発光素子およびこれを用いた照明装置 | |
| JP2009094108A (ja) | ＧａＮ系ＬＥＤ素子の製造方法 | |
| JP5947069B2 (ja) | 半導体素子及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090129 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090326 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110622 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110628 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110822 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20111220 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120102 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4910664 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150127 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |