JP4909885B2 - 基板上での多孔質半導体膜の製造方法 - Google Patents

基板上での多孔質半導体膜の製造方法 Download PDF

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JP4909885B2
JP4909885B2 JP2007508740A JP2007508740A JP4909885B2 JP 4909885 B2 JP4909885 B2 JP 4909885B2 JP 2007508740 A JP2007508740 A JP 2007508740A JP 2007508740 A JP2007508740 A JP 2007508740A JP 4909885 B2 JP4909885 B2 JP 4909885B2
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suspension
semiconductor
semiconductor particles
particles
range
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JP2007534120A5 (https=
JP2007534120A (ja
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ドゥア、ミッチェル
ネレス、ガブリエーレ
章夫 安田
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ソニー ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12014—All metal or with adjacent metals having metal particles
    • Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
JP2007508740A 2004-04-23 2005-02-22 基板上での多孔質半導体膜の製造方法 Expired - Fee Related JP4909885B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04009743A EP1589549A1 (en) 2004-04-23 2004-04-23 A method of producing a porous semiconductor film on a substrate
EP04009743.8 2004-04-23
PCT/EP2005/001842 WO2005104152A1 (en) 2004-04-23 2005-02-22 A method of producing a porous semiconductor film on a substrate

Publications (3)

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JP2007534120A JP2007534120A (ja) 2007-11-22
JP2007534120A5 JP2007534120A5 (https=) 2008-01-10
JP4909885B2 true JP4909885B2 (ja) 2012-04-04

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JP2007508740A Expired - Fee Related JP4909885B2 (ja) 2004-04-23 2005-02-22 基板上での多孔質半導体膜の製造方法

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Country Link
US (1) US20080283119A1 (https=)
EP (1) EP1589549A1 (https=)
JP (1) JP4909885B2 (https=)
KR (1) KR101150319B1 (https=)
AU (1) AU2005236527B2 (https=)
WO (1) WO2005104152A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1209708B1 (en) * 2000-11-24 2007-01-17 Sony Deutschland GmbH Hybrid solar cells with thermal deposited semiconductive oxide layer
WO2008139479A2 (en) * 2007-05-15 2008-11-20 3Gsolar Ltd. Photovoltaic cell
GB2432722A (en) 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
EP2015325A3 (en) * 2006-12-13 2009-11-25 Sony Deutschland GmbH A porous semiconductor film on a substrate
JP5452898B2 (ja) * 2008-08-20 2014-03-26 積水化学工業株式会社 電極装置及びその製造方法
KR100945742B1 (ko) * 2009-07-28 2010-03-05 (주)켐웰텍 염료감응형 태양전지의 광전극 제조방법
KR101682575B1 (ko) 2009-08-24 2016-12-06 삼성전자주식회사 전기 변색 소자 및 그 제조 방법
KR20120040322A (ko) * 2010-10-19 2012-04-27 주식회사 동진쎄미켐 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법
KR101305119B1 (ko) * 2010-11-05 2013-09-12 현대자동차주식회사 잉크젯 인쇄용 반도체 산화물 잉크 조성물과 이의 제조방법 및 이를 이용한 광전변환 소자의 제조방법
KR101285355B1 (ko) * 2011-08-16 2013-07-11 주식회사 씨드 디스플레이 및 염료감응형 태양 전지용 광 경화 잉크젯 잉크 조성물의 제조방법
KR101285357B1 (ko) * 2011-08-16 2013-07-11 주식회사 씨드 극초고분자량 고분자 막을 사용한 전지나 커패시터용 광 경화 잉크젯 잉크의 제조 방법
TW201324795A (zh) * 2011-12-01 2013-06-16 Univ Hsiuping Sci & Tech 染料敏化太陽能工作電極結構及其製作方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751528A (en) * 1987-09-09 1988-06-14 Spectra, Inc. Platen arrangement for hot melt ink jet apparatus
US6252156B1 (en) * 1997-06-24 2001-06-26 Fuji Xerox Co., Ltd. Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor
JP3952103B2 (ja) * 1998-05-29 2007-08-01 触媒化成工業株式会社 光電気セルおよび光電気セル用金属酸化物半導体膜の製造方法
US6706963B2 (en) * 2002-01-25 2004-03-16 Konarka Technologies, Inc. Photovoltaic cell interconnection
JP4285627B2 (ja) * 2001-02-21 2009-06-24 昭和電工株式会社 色素増感型太陽電池用光活性電極及びその製造方法
EP1271227A1 (en) * 2001-06-26 2003-01-02 Nanomat Limited Electrochromic display for high resolution and method of producing the same
JP2003100357A (ja) * 2001-09-20 2003-04-04 Fuji Photo Film Co Ltd 光電変換素子の作製方法、光電変換素子及び光電池
JP2003187881A (ja) * 2001-12-21 2003-07-04 Fuji Photo Film Co Ltd 光電変換素子の作製方法、光電変換素子及び光電池
JP4384389B2 (ja) * 2002-04-18 2009-12-16 株式会社ブリヂストン 金属酸化物半導体膜の形成方法、有機色素増感型金属酸化物半導体電極及びこの半導体電極を有する太陽電池
EP1463073A1 (en) * 2003-03-24 2004-09-29 Sony International (Europe) GmbH Porous film having a gradient of light scattering strength
EP1610170A1 (en) * 2004-06-25 2005-12-28 Sony Deutschland GmbH A method of applying a particle film to create a surface having light-diffusive and/or reduced glare properties

Also Published As

Publication number Publication date
KR101150319B1 (ko) 2012-06-08
US20080283119A1 (en) 2008-11-20
AU2005236527A1 (en) 2005-11-03
JP2007534120A (ja) 2007-11-22
KR20060135909A (ko) 2006-12-29
WO2005104152A1 (en) 2005-11-03
AU2005236527B2 (en) 2010-12-16
EP1589549A1 (en) 2005-10-26

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