AU2005236527B2 - A method of producing a porous semiconductor film on a substrate - Google Patents

A method of producing a porous semiconductor film on a substrate Download PDF

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Publication number
AU2005236527B2
AU2005236527B2 AU2005236527A AU2005236527A AU2005236527B2 AU 2005236527 B2 AU2005236527 B2 AU 2005236527B2 AU 2005236527 A AU2005236527 A AU 2005236527A AU 2005236527 A AU2005236527 A AU 2005236527A AU 2005236527 B2 AU2005236527 B2 AU 2005236527B2
Authority
AU
Australia
Prior art keywords
suspension
semiconductor particles
particles
semiconductor
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2005236527A
Other languages
English (en)
Other versions
AU2005236527A1 (en
Inventor
Michael Duerr
Gabriele Nelles
Akio Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Deutschland GmbH
Original Assignee
Sony Deutschland GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Deutschland GmbH filed Critical Sony Deutschland GmbH
Publication of AU2005236527A1 publication Critical patent/AU2005236527A1/en
Application granted granted Critical
Publication of AU2005236527B2 publication Critical patent/AU2005236527B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01MPROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M14/00Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/12All metal or with adjacent metals
    • Y10T428/12014All metal or with adjacent metals having metal particles
    • Y10T428/12028Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
AU2005236527A 2004-04-23 2005-02-22 A method of producing a porous semiconductor film on a substrate Ceased AU2005236527B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP04009743A EP1589549A1 (en) 2004-04-23 2004-04-23 A method of producing a porous semiconductor film on a substrate
EP04009743.8 2004-04-23
PCT/EP2005/001842 WO2005104152A1 (en) 2004-04-23 2005-02-22 A method of producing a porous semiconductor film on a substrate

Publications (2)

Publication Number Publication Date
AU2005236527A1 AU2005236527A1 (en) 2005-11-03
AU2005236527B2 true AU2005236527B2 (en) 2010-12-16

Family

ID=34924719

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2005236527A Ceased AU2005236527B2 (en) 2004-04-23 2005-02-22 A method of producing a porous semiconductor film on a substrate

Country Status (6)

Country Link
US (1) US20080283119A1 (https=)
EP (1) EP1589549A1 (https=)
JP (1) JP4909885B2 (https=)
KR (1) KR101150319B1 (https=)
AU (1) AU2005236527B2 (https=)
WO (1) WO2005104152A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1209708B1 (en) * 2000-11-24 2007-01-17 Sony Deutschland GmbH Hybrid solar cells with thermal deposited semiconductive oxide layer
WO2008139479A2 (en) * 2007-05-15 2008-11-20 3Gsolar Ltd. Photovoltaic cell
GB2432722A (en) 2005-11-25 2007-05-30 Seiko Epson Corp Electrochemical cell and method of manufacture
EP2015325A3 (en) * 2006-12-13 2009-11-25 Sony Deutschland GmbH A porous semiconductor film on a substrate
JP5452898B2 (ja) * 2008-08-20 2014-03-26 積水化学工業株式会社 電極装置及びその製造方法
KR100945742B1 (ko) * 2009-07-28 2010-03-05 (주)켐웰텍 염료감응형 태양전지의 광전극 제조방법
KR101682575B1 (ko) 2009-08-24 2016-12-06 삼성전자주식회사 전기 변색 소자 및 그 제조 방법
KR20120040322A (ko) * 2010-10-19 2012-04-27 주식회사 동진쎄미켐 광산란층을 구비한 염료감응 태양전지모듈 및 그 제조 방법
KR101305119B1 (ko) * 2010-11-05 2013-09-12 현대자동차주식회사 잉크젯 인쇄용 반도체 산화물 잉크 조성물과 이의 제조방법 및 이를 이용한 광전변환 소자의 제조방법
KR101285355B1 (ko) * 2011-08-16 2013-07-11 주식회사 씨드 디스플레이 및 염료감응형 태양 전지용 광 경화 잉크젯 잉크 조성물의 제조방법
KR101285357B1 (ko) * 2011-08-16 2013-07-11 주식회사 씨드 극초고분자량 고분자 막을 사용한 전지나 커패시터용 광 경화 잉크젯 잉크의 제조 방법
TW201324795A (zh) * 2011-12-01 2013-06-16 Univ Hsiuping Sci & Tech 染料敏化太陽能工作電極結構及其製作方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252156B1 (en) * 1997-06-24 2001-06-26 Fuji Xerox Co., Ltd. Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor
EP1271227A1 (en) * 2001-06-26 2003-01-02 Nanomat Limited Electrochromic display for high resolution and method of producing the same
US20030140959A1 (en) * 2002-01-25 2003-07-31 Russell Gaudiana Photovoltaic cell interconnection

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4751528A (en) * 1987-09-09 1988-06-14 Spectra, Inc. Platen arrangement for hot melt ink jet apparatus
JP3952103B2 (ja) * 1998-05-29 2007-08-01 触媒化成工業株式会社 光電気セルおよび光電気セル用金属酸化物半導体膜の製造方法
JP4285627B2 (ja) * 2001-02-21 2009-06-24 昭和電工株式会社 色素増感型太陽電池用光活性電極及びその製造方法
JP2003100357A (ja) * 2001-09-20 2003-04-04 Fuji Photo Film Co Ltd 光電変換素子の作製方法、光電変換素子及び光電池
JP2003187881A (ja) * 2001-12-21 2003-07-04 Fuji Photo Film Co Ltd 光電変換素子の作製方法、光電変換素子及び光電池
JP4384389B2 (ja) * 2002-04-18 2009-12-16 株式会社ブリヂストン 金属酸化物半導体膜の形成方法、有機色素増感型金属酸化物半導体電極及びこの半導体電極を有する太陽電池
EP1463073A1 (en) * 2003-03-24 2004-09-29 Sony International (Europe) GmbH Porous film having a gradient of light scattering strength
EP1610170A1 (en) * 2004-06-25 2005-12-28 Sony Deutschland GmbH A method of applying a particle film to create a surface having light-diffusive and/or reduced glare properties

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252156B1 (en) * 1997-06-24 2001-06-26 Fuji Xerox Co., Ltd. Photosensitive semiconductor electrode, method of manufacturing photosensitive semiconductor electrode, and photoelectric converter using photosensitive semiconductor
EP1271227A1 (en) * 2001-06-26 2003-01-02 Nanomat Limited Electrochromic display for high resolution and method of producing the same
US20030140959A1 (en) * 2002-01-25 2003-07-31 Russell Gaudiana Photovoltaic cell interconnection

Also Published As

Publication number Publication date
KR101150319B1 (ko) 2012-06-08
US20080283119A1 (en) 2008-11-20
AU2005236527A1 (en) 2005-11-03
JP4909885B2 (ja) 2012-04-04
JP2007534120A (ja) 2007-11-22
KR20060135909A (ko) 2006-12-29
WO2005104152A1 (en) 2005-11-03
EP1589549A1 (en) 2005-10-26

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MK14 Patent ceased section 143(a) (annual fees not paid) or expired