JP4907310B2 - 処理装置、処理方法及び記録媒体 - Google Patents

処理装置、処理方法及び記録媒体 Download PDF

Info

Publication number
JP4907310B2
JP4907310B2 JP2006317253A JP2006317253A JP4907310B2 JP 4907310 B2 JP4907310 B2 JP 4907310B2 JP 2006317253 A JP2006317253 A JP 2006317253A JP 2006317253 A JP2006317253 A JP 2006317253A JP 4907310 B2 JP4907310 B2 JP 4907310B2
Authority
JP
Japan
Prior art keywords
processing
space
pressure
lid
seal portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006317253A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008130978A (ja
Inventor
治郎 東島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2006317253A priority Critical patent/JP4907310B2/ja
Priority to KR1020087016891A priority patent/KR100979978B1/ko
Priority to DE112007002340T priority patent/DE112007002340T5/de
Priority to PCT/JP2007/072540 priority patent/WO2008062826A1/ja
Priority to US12/439,249 priority patent/US8298344B2/en
Priority to TW096144619A priority patent/TW200839862A/zh
Publication of JP2008130978A publication Critical patent/JP2008130978A/ja
Application granted granted Critical
Publication of JP4907310B2 publication Critical patent/JP4907310B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2006317253A 2006-11-24 2006-11-24 処理装置、処理方法及び記録媒体 Expired - Fee Related JP4907310B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006317253A JP4907310B2 (ja) 2006-11-24 2006-11-24 処理装置、処理方法及び記録媒体
KR1020087016891A KR100979978B1 (ko) 2006-11-24 2007-11-21 처리 장치, 처리 방법 및 기록 매체
DE112007002340T DE112007002340T5 (de) 2006-11-24 2007-11-21 Bearbeitungssystem, Bearbeitungsverfahren und Aufzeichnungsmedium
PCT/JP2007/072540 WO2008062826A1 (en) 2006-11-24 2007-11-21 Treatment apparatus, method of treating and recording medium
US12/439,249 US8298344B2 (en) 2006-11-24 2007-11-21 Method of processing workpieces using a vessel with a low pressure space surrounding a processing space for the purpose of preventing the leakage of atmosphere into the processing space
TW096144619A TW200839862A (en) 2006-11-24 2007-11-23 Treatment apparatus, method of treating and recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006317253A JP4907310B2 (ja) 2006-11-24 2006-11-24 処理装置、処理方法及び記録媒体

Publications (2)

Publication Number Publication Date
JP2008130978A JP2008130978A (ja) 2008-06-05
JP4907310B2 true JP4907310B2 (ja) 2012-03-28

Family

ID=39429755

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006317253A Expired - Fee Related JP4907310B2 (ja) 2006-11-24 2006-11-24 処理装置、処理方法及び記録媒体

Country Status (6)

Country Link
US (1) US8298344B2 (enExample)
JP (1) JP4907310B2 (enExample)
KR (1) KR100979978B1 (enExample)
DE (1) DE112007002340T5 (enExample)
TW (1) TW200839862A (enExample)
WO (1) WO2008062826A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4985183B2 (ja) * 2007-07-26 2012-07-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
US8033771B1 (en) * 2008-12-11 2011-10-11 Novellus Systems, Inc. Minimum contact area wafer clamping with gas flow for rapid wafer cooling
JP5474840B2 (ja) * 2011-01-25 2014-04-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP5655735B2 (ja) * 2011-07-26 2015-01-21 東京エレクトロン株式会社 処理装置、処理方法及び記憶媒体
JP6305736B2 (ja) * 2013-11-20 2018-04-04 測位衛星技術株式会社 情報管理システム、データバンク装置、データの管理方法、データベースの管理方法、および、プログラム
JP5994821B2 (ja) * 2014-06-13 2016-09-21 ウシオ電機株式会社 デスミア処理装置およびデスミア処理方法
US10460955B2 (en) * 2014-08-25 2019-10-29 The United States Of America As Represented By The Secretary Of The Army Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems
JP6666793B2 (ja) * 2016-05-23 2020-03-18 大陽日酸株式会社 反応装置
JP6581644B2 (ja) * 2017-12-06 2019-09-25 ＣＳＧ Ｉｎｖｅｓｔｍｅｎｔｓ株式会社 密閉容器用蓋
JP7594976B2 (ja) * 2021-05-31 2024-12-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248022A (en) * 1990-11-28 1993-09-28 Tokyo Electron Limited Driving device having sealing mechanism
JP3078834B2 (ja) * 1990-11-28 2000-08-21 東京エレクトロン株式会社 駆動装置
JP3106172B2 (ja) * 1991-02-26 2000-11-06 東京エレクトロン株式会社 熱処理装置の封止構造
JPH0910709A (ja) * 1995-06-30 1997-01-14 Dainippon Screen Mfg Co Ltd 基板処理装置
US5820692A (en) * 1996-01-16 1998-10-13 Fsi Interntional Vacuum compatible water vapor and rinse process module
JP3794808B2 (ja) * 1998-01-12 2006-07-12 大日本スクリーン製造株式会社 基板処理装置
JPH11219925A (ja) * 1998-01-29 1999-08-10 Shin Etsu Handotai Co Ltd 多孔質焼結体を用いた耐熱性半導体製造治具の洗浄方法及びその乾燥方法
JP3953682B2 (ja) * 1999-06-02 2007-08-08 株式会社荏原製作所 ウエハ洗浄装置
JP4196532B2 (ja) 2000-09-28 2008-12-17 株式会社日立製作所 自動車用発電機および回転機の音質評価方法
US6647642B2 (en) * 2000-12-15 2003-11-18 Tokyo Electron Limited Liquid processing apparatus and method
JP3992488B2 (ja) * 2000-12-15 2007-10-17 東京エレクトロン株式会社 液処理装置および液処理方法
US6729041B2 (en) * 2000-12-28 2004-05-04 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP2003224102A (ja) 2002-01-30 2003-08-08 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR100863782B1 (ko) * 2002-03-08 2008-10-16 도쿄엘렉트론가부시키가이샤 기판처리장치 및 기판처리방법
JP2003332322A (ja) * 2002-03-08 2003-11-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
KR20050019129A (ko) * 2002-06-13 2005-02-28 비오씨 에드워즈 인코포레이티드 기판 처리 장치 및 기판 처리 방법
WO2004012259A1 (ja) * 2002-07-25 2004-02-05 Tokyo Electron Limited 基板処理容器
JP4093462B2 (ja) 2002-10-09 2008-06-04 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Also Published As

Publication number Publication date
DE112007002340T5 (de) 2009-07-30
US20090260656A1 (en) 2009-10-22
KR100979978B1 (ko) 2010-09-03
WO2008062826A1 (en) 2008-05-29
JP2008130978A (ja) 2008-06-05
US8298344B2 (en) 2012-10-30
KR20080097402A (ko) 2008-11-05
TW200839862A (en) 2008-10-01
TWI362070B (enExample) 2012-04-11

Similar Documents

Publication Publication Date Title
WO2008062826A1 (en) Treatment apparatus, method of treating and recording medium
CN111357090B (zh) 用于高压处理腔室的气体输送系统
CN111066132B (zh) 用于高压处理腔室的气体输送系统
CN111775043B (zh) 基板保持装置及弹性膜
US10784138B2 (en) Substrate processing system and substrate transfer method
JP5383979B2 (ja) 処理システム
JP2017205853A (ja) 弾性膜、基板保持装置、基板研磨装置、基板保持装置における基板吸着判定方法および圧力制御方法
JP2015039040A (ja) 処理装置、処理方法及び記憶媒体
KR101121938B1 (ko) 웨이퍼 처리를 위한 챔버 및 관련 방법
US8136538B2 (en) Processing system, processing method, and storage medium
CN118402051A (zh) 高压工艺及真空工艺并用型晶片处理装置以及利用减压的晶片处理方法
JP4976110B2 (ja) 処理システムと処理方法および記録媒体
KR101421547B1 (ko) 수직형 기판 처리 장치와 방법
KR102119402B1 (ko) 기판처리장치
KR20080084145A (ko) 반도체 제조설비의 기상 증착 장치 및 방법
KR20050023979A (ko) 헬륨 순환 시스템
JPH04143273A (ja) 基板冷却機構
KR20050117329A (ko) 유량제어기를 갖는 반도체 제조장치의 로드록 챔버
JP2004228359A (ja) 半導体製造装置
KR20070016729A (ko) 로드락 챔버 퍼지 시스템
KR20070036306A (ko) 챔버의 잠금장치

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20091008

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111201

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4907310

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees