DE112007002340T5 - Bearbeitungssystem, Bearbeitungsverfahren und Aufzeichnungsmedium - Google Patents
Bearbeitungssystem, Bearbeitungsverfahren und Aufzeichnungsmedium Download PDFInfo
- Publication number
- DE112007002340T5 DE112007002340T5 DE112007002340T DE112007002340T DE112007002340T5 DE 112007002340 T5 DE112007002340 T5 DE 112007002340T5 DE 112007002340 T DE112007002340 T DE 112007002340T DE 112007002340 T DE112007002340 T DE 112007002340T DE 112007002340 T5 DE112007002340 T5 DE 112007002340T5
- Authority
- DE
- Germany
- Prior art keywords
- processing
- space
- pressure
- vessel
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000012545 processing Methods 0.000 title claims abstract description 356
- 238000003672 processing method Methods 0.000 title claims description 10
- 238000007789 sealing Methods 0.000 claims abstract description 147
- 230000007246 mechanism Effects 0.000 claims abstract description 66
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 61
- 238000003754 machining Methods 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 29
- 239000012530 fluid Substances 0.000 claims description 26
- 230000007797 corrosion Effects 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 6
- 229920005989 resin Polymers 0.000 claims description 6
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000002792 vascular Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 description 105
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 33
- 230000032258 transport Effects 0.000 description 32
- 230000008569 process Effects 0.000 description 24
- 238000012546 transfer Methods 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 18
- 230000002093 peripheral effect Effects 0.000 description 17
- 239000007789 gas Substances 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 14
- 230000001105 regulatory effect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 238000000746 purification Methods 0.000 description 6
- 238000009877 rendering Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 239000012153 distilled water Substances 0.000 description 4
- 230000007257 malfunction Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229920001973 fluoroelastomer Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000008844 regulatory mechanism Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012549 training Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006317253A JP4907310B2 (ja) | 2006-11-24 | 2006-11-24 | 処理装置、処理方法及び記録媒体 |
| JP2006-317253 | 2006-11-24 | ||
| PCT/JP2007/072540 WO2008062826A1 (en) | 2006-11-24 | 2007-11-21 | Treatment apparatus, method of treating and recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112007002340T5 true DE112007002340T5 (de) | 2009-07-30 |
Family
ID=39429755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112007002340T Withdrawn DE112007002340T5 (de) | 2006-11-24 | 2007-11-21 | Bearbeitungssystem, Bearbeitungsverfahren und Aufzeichnungsmedium |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8298344B2 (enExample) |
| JP (1) | JP4907310B2 (enExample) |
| KR (1) | KR100979978B1 (enExample) |
| DE (1) | DE112007002340T5 (enExample) |
| TW (1) | TW200839862A (enExample) |
| WO (1) | WO2008062826A1 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4985183B2 (ja) * | 2007-07-26 | 2012-07-25 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法並びに記憶媒体 |
| US8033771B1 (en) * | 2008-12-11 | 2011-10-11 | Novellus Systems, Inc. | Minimum contact area wafer clamping with gas flow for rapid wafer cooling |
| JP5474840B2 (ja) * | 2011-01-25 | 2014-04-16 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| JP5655735B2 (ja) * | 2011-07-26 | 2015-01-21 | 東京エレクトロン株式会社 | 処理装置、処理方法及び記憶媒体 |
| JP6305736B2 (ja) * | 2013-11-20 | 2018-04-04 | 測位衛星技術株式会社 | 情報管理システム、データバンク装置、データの管理方法、データベースの管理方法、および、プログラム |
| JP5994821B2 (ja) * | 2014-06-13 | 2016-09-21 | ウシオ電機株式会社 | デスミア処理装置およびデスミア処理方法 |
| US10460955B2 (en) * | 2014-08-25 | 2019-10-29 | The United States Of America As Represented By The Secretary Of The Army | Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems |
| JP6666793B2 (ja) * | 2016-05-23 | 2020-03-18 | 大陽日酸株式会社 | 反応装置 |
| JP6581644B2 (ja) * | 2017-12-06 | 2019-09-25 | ＣＳＧ Ｉｎｖｅｓｔｍｅｎｔｓ株式会社 | 密閉容器用蓋 |
| JP7594976B2 (ja) * | 2021-05-31 | 2024-12-05 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224102A (ja) | 2002-01-30 | 2003-08-08 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| JP2003332322A (ja) | 2002-03-08 | 2003-11-21 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| JP2004134525A (ja) | 2002-10-09 | 2004-04-30 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5248022A (en) * | 1990-11-28 | 1993-09-28 | Tokyo Electron Limited | Driving device having sealing mechanism |
| JP3078834B2 (ja) * | 1990-11-28 | 2000-08-21 | 東京エレクトロン株式会社 | 駆動装置 |
| JP3106172B2 (ja) * | 1991-02-26 | 2000-11-06 | 東京エレクトロン株式会社 | 熱処理装置の封止構造 |
| JPH0910709A (ja) * | 1995-06-30 | 1997-01-14 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| US5820692A (en) * | 1996-01-16 | 1998-10-13 | Fsi Interntional | Vacuum compatible water vapor and rinse process module |
| JP3794808B2 (ja) * | 1998-01-12 | 2006-07-12 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| JPH11219925A (ja) * | 1998-01-29 | 1999-08-10 | Shin Etsu Handotai Co Ltd | 多孔質焼結体を用いた耐熱性半導体製造治具の洗浄方法及びその乾燥方法 |
| JP3953682B2 (ja) * | 1999-06-02 | 2007-08-08 | 株式会社荏原製作所 | ウエハ洗浄装置 |
| JP4196532B2 (ja) | 2000-09-28 | 2008-12-17 | 株式会社日立製作所 | 自動車用発電機および回転機の音質評価方法 |
| US6647642B2 (en) * | 2000-12-15 | 2003-11-18 | Tokyo Electron Limited | Liquid processing apparatus and method |
| JP3992488B2 (ja) * | 2000-12-15 | 2007-10-17 | 東京エレクトロン株式会社 | 液処理装置および液処理方法 |
| US6729041B2 (en) * | 2000-12-28 | 2004-05-04 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| KR100863782B1 (ko) * | 2002-03-08 | 2008-10-16 | 도쿄엘렉트론가부시키가이샤 | 기판처리장치 및 기판처리방법 |
| KR20050019129A (ko) * | 2002-06-13 | 2005-02-28 | 비오씨 에드워즈 인코포레이티드 | 기판 처리 장치 및 기판 처리 방법 |
| KR100992803B1 (ko) * | 2002-07-25 | 2010-11-09 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 용기 |
-
2006
- 2006-11-24 JP JP2006317253A patent/JP4907310B2/ja not_active Expired - Fee Related
-
2007
- 2007-11-21 DE DE112007002340T patent/DE112007002340T5/de not_active Withdrawn
- 2007-11-21 WO PCT/JP2007/072540 patent/WO2008062826A1/ja not_active Ceased
- 2007-11-21 KR KR1020087016891A patent/KR100979978B1/ko not_active Expired - Fee Related
- 2007-11-21 US US12/439,249 patent/US8298344B2/en not_active Expired - Fee Related
- 2007-11-23 TW TW096144619A patent/TW200839862A/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003224102A (ja) | 2002-01-30 | 2003-08-08 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| JP2003332322A (ja) | 2002-03-08 | 2003-11-21 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
| JP2004134525A (ja) | 2002-10-09 | 2004-04-30 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR100979978B1 (ko) | 2010-09-03 |
| US8298344B2 (en) | 2012-10-30 |
| JP2008130978A (ja) | 2008-06-05 |
| KR20080097402A (ko) | 2008-11-05 |
| US20090260656A1 (en) | 2009-10-22 |
| TWI362070B (enExample) | 2012-04-11 |
| TW200839862A (en) | 2008-10-01 |
| WO2008062826A1 (en) | 2008-05-29 |
| JP4907310B2 (ja) | 2012-03-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |
Effective date: 20130601 |