JP4907003B2 - アクティブマトリクス型表示装置およびそれを用いた電気器具 - Google Patents

アクティブマトリクス型表示装置およびそれを用いた電気器具 Download PDF

Info

Publication number
JP4907003B2
JP4907003B2 JP2000391869A JP2000391869A JP4907003B2 JP 4907003 B2 JP4907003 B2 JP 4907003B2 JP 2000391869 A JP2000391869 A JP 2000391869A JP 2000391869 A JP2000391869 A JP 2000391869A JP 4907003 B2 JP4907003 B2 JP 4907003B2
Authority
JP
Japan
Prior art keywords
wiring
film
display device
active matrix
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2000391869A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001249362A5 (enExample
JP2001249362A (ja
Inventor
明 石川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2000391869A priority Critical patent/JP4907003B2/ja
Publication of JP2001249362A publication Critical patent/JP2001249362A/ja
Publication of JP2001249362A5 publication Critical patent/JP2001249362A5/ja
Application granted granted Critical
Publication of JP4907003B2 publication Critical patent/JP4907003B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Liquid Crystal (AREA)
  • Shift Register Type Memory (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2000391869A 1999-12-27 2000-12-25 アクティブマトリクス型表示装置およびそれを用いた電気器具 Expired - Fee Related JP4907003B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000391869A JP4907003B2 (ja) 1999-12-27 2000-12-25 アクティブマトリクス型表示装置およびそれを用いた電気器具

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1999369935 1999-12-27
JP36993599 1999-12-27
JP11-369935 1999-12-27
JP2000391869A JP4907003B2 (ja) 1999-12-27 2000-12-25 アクティブマトリクス型表示装置およびそれを用いた電気器具

Publications (3)

Publication Number Publication Date
JP2001249362A JP2001249362A (ja) 2001-09-14
JP2001249362A5 JP2001249362A5 (enExample) 2009-01-08
JP4907003B2 true JP4907003B2 (ja) 2012-03-28

Family

ID=26582171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000391869A Expired - Fee Related JP4907003B2 (ja) 1999-12-27 2000-12-25 アクティブマトリクス型表示装置およびそれを用いた電気器具

Country Status (1)

Country Link
JP (1) JP4907003B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152086A (ja) * 2001-11-15 2003-05-23 Semiconductor Energy Lab Co Ltd 半導体装置
US7045861B2 (en) * 2002-03-26 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, liquid-crystal display device and method for manufacturing same
KR100462861B1 (ko) * 2002-04-15 2004-12-17 삼성에스디아이 주식회사 블랙매트릭스를 구비한 평판표시장치 및 그의 제조방법
US7528643B2 (en) 2003-02-12 2009-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic device having the same, and driving method of the same
JP4732294B2 (ja) * 2003-02-12 2011-07-27 株式会社半導体エネルギー研究所 半導体装置
CN1307479C (zh) * 2003-07-10 2007-03-28 友达光电股份有限公司 电容器装置
JP4324441B2 (ja) * 2003-10-09 2009-09-02 シャープ株式会社 素子基板、表示装置
US8115206B2 (en) * 2005-07-22 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPWO2011135873A1 (ja) * 2010-04-28 2013-07-18 シャープ株式会社 シフトレジスタおよび表示装置
WO2011145468A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
FR2965942B1 (fr) * 2010-10-08 2013-02-22 Commissariat Energie Atomique Afficheur a cristal liquide de type transmissif en technologie cmos avec capacite de stockage auxiliaire
JP2012119532A (ja) * 2010-12-01 2012-06-21 Seiko Epson Corp 薄膜トランジスタ形成用基板、半導体装置、電気装置
JP5909919B2 (ja) * 2011-08-17 2016-04-27 セイコーエプソン株式会社 電気光学装置及び電子機器
JP2015094880A (ja) * 2013-11-13 2015-05-18 セイコーエプソン株式会社 電気光学装置、および電子機器
JP6169005B2 (ja) * 2014-01-17 2017-07-26 株式会社ジャパンディスプレイ 発光素子表示装置
KR102296945B1 (ko) * 2014-07-04 2021-09-01 엘지디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
KR102465381B1 (ko) * 2015-12-14 2022-11-10 삼성디스플레이 주식회사 유기 발광 표시 장치
CN111771283B (zh) * 2018-01-11 2024-10-25 应用材料公司 具有金属氧化物开关的小型存储电容器的薄膜晶体管

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2616160B2 (ja) * 1990-06-25 1997-06-04 日本電気株式会社 薄膜電界効果型トランジスタ素子アレイ
JPH0824193B2 (ja) * 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JPH08184852A (ja) * 1994-12-27 1996-07-16 Sharp Corp アクティブマトリクス型表示装置
JP2720862B2 (ja) * 1995-12-08 1998-03-04 日本電気株式会社 薄膜トランジスタおよび薄膜トランジスタアレイ
JP3433779B2 (ja) * 1996-06-19 2003-08-04 シャープ株式会社 アクティブマトリクス基板およびその製造方法
JP4403329B2 (ja) * 1999-08-30 2010-01-27 ソニー株式会社 液晶表示装置の製造方法

Also Published As

Publication number Publication date
JP2001249362A (ja) 2001-09-14

Similar Documents

Publication Publication Date Title
US6590227B2 (en) Active matrix display device
US9035314B2 (en) Method for manufacturing an electrooptical device
JP5648019B2 (ja) 表示装置の作製方法
US6542205B2 (en) Display device
JP4907003B2 (ja) アクティブマトリクス型表示装置およびそれを用いた電気器具
US20010053559A1 (en) Method of fabricating display device
JP4896314B2 (ja) 表示装置
JP5121103B2 (ja) 半導体装置、半導体装置の作製方法及び電気器具
JP2002319679A (ja) 半導体装置
JPH11112002A (ja) 半導体装置およびその製造方法
JP2000349298A (ja) 電気光学装置およびその作製方法
JP2001284342A (ja) 電気光学装置の作製方法
JP4850763B2 (ja) 半導体装置の作製方法
CN100550398C (zh) 半导体器件及其制造方法
JP4641586B2 (ja) 半導体装置の作製方法
JP2012022335A (ja) 半導体装置
JP4963158B2 (ja) 表示装置の作製方法、電気光学装置の作製方法
JP4700159B2 (ja) 半導体装置の作製方法
JP2013157611A (ja) 半導体装置
JP5159005B2 (ja) 半導体装置の作製方法
JP2003303833A (ja) 半導体装置の作製方法
JP2017004013A (ja) 半導体装置
JP2005148728A (ja) 集積回路
JP2018159938A (ja) 液晶表示装置
JP2014081645A (ja) 半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20071221

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20071221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110607

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110720

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111011

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111122

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120110

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120111

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees