JP4906597B2 - 半導体キャパシタ構造 - Google Patents
半導体キャパシタ構造 Download PDFInfo
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- JP4906597B2 JP4906597B2 JP2007141486A JP2007141486A JP4906597B2 JP 4906597 B2 JP4906597 B2 JP 4906597B2 JP 2007141486 A JP2007141486 A JP 2007141486A JP 2007141486 A JP2007141486 A JP 2007141486A JP 4906597 B2 JP4906597 B2 JP 4906597B2
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- nitrogen
- refractory metal
- silicon
- layer
- capacitor
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- 239000003990 capacitor Substances 0.000 title claims description 49
- 239000004065 semiconductor Substances 0.000 title claims description 47
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 114
- 229910052757 nitrogen Inorganic materials 0.000 claims description 93
- 239000000463 material Substances 0.000 claims description 37
- 239000003870 refractory metal Substances 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 description 50
- 238000000151 deposition Methods 0.000 description 26
- 238000004544 sputter deposition Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 18
- 238000011065 in-situ storage Methods 0.000 description 12
- 229910004200 TaSiN Inorganic materials 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000004020 conductor Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 4
- 229910001199 N alloy Inorganic materials 0.000 description 3
- 229910018509 Al—N Inorganic materials 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- -1 tantalum-aluminum-nitrogen Chemical compound 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0073—Reactive sputtering by exposing the substrates to reactive gases intermittently
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Description
(表1)
(表2)
75.5nm Ta:Si:N 7.7 : 30.7 : 61.6(Ar内のN2分圧50%)
58.7nm Ta:Si:N 9.8 : 30.2 : 59.9 (Ar内のN2分圧30%)
スパッタリング・チャンバ内に、前処理された半導体基板を位置決めするステップと、
スパッタリング・チャンバ内にArガスを流し込むステップと、
前記基板上に第1の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップと、
N2の流量または分圧を調整することにより、前記チャンバ内のN2ガスの濃度が少なくとも35%になるように、N2ガスを前記スパッタリング・チャンバ内に流し込むステップと、
前記第1の耐熱金属−ケイ素−窒素の層上に、第2の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップと、
前記スパッタリング・チャンバ内への前記N2ガスのフローを停止するステップと、
前記第2の耐熱金属−ケイ素−窒素の層上に、第3の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップと、
フォトリソグラフィを用いて、前記第1、第2及び第3の耐熱金属−ケイ素−窒素の層をキャパシタに形成するステップと
を含む方法。
(2)少なくとも80℃の温度で前記キャパシタを原位置アニールするステップを含む、前記(1)記載の方法。
(3)前記Arガスを約10sccm乃至約200sccmの流量で、前記スパッタリング・チャンバ内に流し込むステップを含む、前記(1)記載の方法。
(4)前記N2ガスを約1sccm乃至約100sccmの流量で、前記スパッタリング・チャンバ内に流し込むステップを含む、前記(1)記載の方法。
(5)前記第1及び第3の耐熱金属−ケイ素−窒素の層を、約100 乃至約5000 の厚さにスパッタ付着するステップを含む、前記(1)記載の方法。
(6)前記第2の耐熱金属−ケイ素−窒素の層を、約100 乃至約5000 の厚さにスパッタ付着するステップを含む、前記(1)記載の方法。
(7)各々が50Ω/cm2以下のシート抵抗を有する、前記第1及び第3の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップを含む、前記(1)記載の方法。
(8)7.5以上の誘電率を有する前記第2の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップを含む、前記(1)記載の方法。
(9)Ta、Nb、V、W及びTiを含むグループから選択される耐熱金属から成る、前記第1、第2及び第3の耐熱金属−ケイ素−窒素の層をスパッタ付着するステップを含む、前記(1)記載の方法。
(10)前記第1、第2及び第3の耐熱金属−ケイ素−窒素の層を、耐熱金属ケイ化物のターゲットからスパッタ付着するステップを含む、前記(1)記載の方法。
(11)前記第1、第2及び第3の耐熱金属−ケイ素−窒素の層を、耐熱金属及びケイ素の2つのスパッタリング・ターゲットからスパッタ付着するステップを含む、前記(1)記載の方法。
(12)50Ω/cm2以下のシート抵抗を有する第1の耐熱金属−ケイ素−窒素材料から成る下部電極と、
7.5以上の誘電率を有する第2の耐熱金属−ケイ素−窒素から成る中間誘電体層と、
前記第1の耐熱金属−ケイ素−窒素材料から成る上部電極と
を含む半導体キャパシタ構造。
(13)前記下部電極及び前記上部電極の各々が、約100 乃至約5000 の厚さに形成される、前記(12)記載の半導体キャパシタ構造。
(14)前記中間誘電体層が約100 乃至約5000 の厚さに形成される、前記(12)記載の半導体キャパシタ構造。
(15)前記第1、第2及び第3の耐熱金属−ケイ素−窒素材料内の前記耐熱金属が、Ta、Nb、V、W及びTiを含むグループから選択される、前記(12)記載の半導体キャパシタ構造。
(16)前記第1の耐熱金属−ケイ素−窒素材料が50Ω/cm2以下のシート抵抗を有する、前記(12)記載の半導体キャパシタ構造。
(17)前記第2の耐熱金属−ケイ素−窒素材料が7.5以上の誘電率を有する、前記(12)記載の半導体キャパシタ構造。
12 絶縁材料層
14 下部電極
16 誘電体層
18 上部電極
20 キャパシタ・スタック
22 拡散障壁
24、26、28 コンタクト開口
30 ヒューズ
32 抵抗器
34 ポリシリコン・コンタクト・バイア
Claims (2)
- 50Ω/cm2以下のシート抵抗を有する第1の耐熱金属−ケイ素−窒素材料から成る下部電極と、
前記下部電極上に形成され、前記第1の耐熱金属−ケイ素−窒素材料とは異なる化学量論を有し、8.0乃至9.5の誘電率を有する第2の耐熱金属−ケイ素−窒素材料から成る中間誘電体層と、
前記中間誘電体層上に形成され、前記第1の耐熱金属−ケイ素−窒素材料から成る上部電極と
を含み、前記第1および第2の耐熱金属−ケイ素−窒素材料内の耐熱金属が同一である、半導体キャパシタ構造。 - 前記第1および第2の耐熱金属−ケイ素−窒素材料内の前記耐熱金属が、Ta、Nb、V、W及びTiを含むグループから選択される、請求項1記載の半導体キャパシタ構造。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/872,603 US6524908B2 (en) | 2001-06-01 | 2001-06-01 | Method for forming refractory metal-silicon-nitrogen capacitors and structures formed |
US09/872603 | 2001-06-01 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002149960A Division JP3980409B2 (ja) | 2001-06-01 | 2002-05-24 | 耐熱金属−ケイ素−窒素キャパシタを形成する方法及びその構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007306008A JP2007306008A (ja) | 2007-11-22 |
JP4906597B2 true JP4906597B2 (ja) | 2012-03-28 |
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JP2002149960A Expired - Fee Related JP3980409B2 (ja) | 2001-06-01 | 2002-05-24 | 耐熱金属−ケイ素−窒素キャパシタを形成する方法及びその構造 |
JP2007141486A Expired - Fee Related JP4906597B2 (ja) | 2001-06-01 | 2007-05-29 | 半導体キャパシタ構造 |
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Country Status (4)
Country | Link |
---|---|
US (2) | US6524908B2 (ja) |
JP (2) | JP3980409B2 (ja) |
SG (1) | SG104330A1 (ja) |
TW (1) | TW544838B (ja) |
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US6534809B2 (en) * | 1999-12-22 | 2003-03-18 | Agilent Technologies, Inc. | Hardmask designs for dry etching FeRAM capacitor stacks |
US6747353B2 (en) * | 2000-11-27 | 2004-06-08 | Texas Instruments Incorporated | Barrier layer for copper metallization in integrated circuit fabrication |
US6545339B2 (en) * | 2001-01-12 | 2003-04-08 | International Business Machines Corporation | Semiconductor device incorporating elements formed of refractory metal-silicon-nitrogen and method for fabrication |
-
2001
- 2001-06-01 US US09/872,603 patent/US6524908B2/en not_active Expired - Fee Related
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2002
- 2002-05-24 SG SG200203152A patent/SG104330A1/en unknown
- 2002-05-24 JP JP2002149960A patent/JP3980409B2/ja not_active Expired - Fee Related
- 2002-05-29 TW TW091111504A patent/TW544838B/zh not_active IP Right Cessation
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2003
- 2003-01-16 US US10/346,437 patent/US6707097B2/en not_active Expired - Lifetime
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US20030107075A1 (en) | 2003-06-12 |
SG104330A1 (en) | 2004-06-21 |
US20020185689A1 (en) | 2002-12-12 |
TW544838B (en) | 2003-08-01 |
JP3980409B2 (ja) | 2007-09-26 |
JP2007306008A (ja) | 2007-11-22 |
JP2003060084A (ja) | 2003-02-28 |
US6707097B2 (en) | 2004-03-16 |
US6524908B2 (en) | 2003-02-25 |
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