JP4903288B2 - シリカ容器及びその製造方法 - Google Patents

シリカ容器及びその製造方法 Download PDF

Info

Publication number
JP4903288B2
JP4903288B2 JP2010540751A JP2010540751A JP4903288B2 JP 4903288 B2 JP4903288 B2 JP 4903288B2 JP 2010540751 A JP2010540751 A JP 2010540751A JP 2010540751 A JP2010540751 A JP 2010540751A JP 4903288 B2 JP4903288 B2 JP 4903288B2
Authority
JP
Japan
Prior art keywords
silica
molecules
gas
silica container
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010540751A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2010137221A1 (ja
Inventor
茂 山形
友美 笛吹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Quartz Products Co Ltd
Original Assignee
Shin Etsu Quartz Products Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Quartz Products Co Ltd filed Critical Shin Etsu Quartz Products Co Ltd
Priority to JP2010540751A priority Critical patent/JP4903288B2/ja
Application granted granted Critical
Publication of JP4903288B2 publication Critical patent/JP4903288B2/ja
Publication of JPWO2010137221A1 publication Critical patent/JPWO2010137221A1/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y10T428/1317—Multilayer [continuous layer]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)
  • Glass Compositions (AREA)
JP2010540751A 2009-05-26 2010-03-24 シリカ容器及びその製造方法 Active JP4903288B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010540751A JP4903288B2 (ja) 2009-05-26 2010-03-24 シリカ容器及びその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009126256 2009-05-26
JP2009126256 2009-05-26
JP2010540751A JP4903288B2 (ja) 2009-05-26 2010-03-24 シリカ容器及びその製造方法
PCT/JP2010/002049 WO2010137221A1 (ja) 2009-05-26 2010-03-24 シリカ容器及びその製造方法

Publications (2)

Publication Number Publication Date
JP4903288B2 true JP4903288B2 (ja) 2012-03-28
JPWO2010137221A1 JPWO2010137221A1 (ja) 2012-11-12

Family

ID=43222354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010540751A Active JP4903288B2 (ja) 2009-05-26 2010-03-24 シリカ容器及びその製造方法

Country Status (7)

Country Link
US (2) US8420192B2 (ko)
EP (1) EP2436658A4 (ko)
JP (1) JP4903288B2 (ko)
KR (1) KR101315684B1 (ko)
CN (1) CN102395535B (ko)
TW (1) TWI405730B (ko)
WO (1) WO2010137221A1 (ko)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4951040B2 (ja) * 2009-08-05 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
KR101048586B1 (ko) * 2009-10-06 2011-07-12 주식회사 엘지실트론 고강도 석영 도가니 및 그 제조방법
JP4951057B2 (ja) * 2009-12-10 2012-06-13 信越石英株式会社 シリカ容器及びその製造方法
JP5452709B2 (ja) * 2010-03-31 2014-03-26 三菱マテリアル株式会社 シリコンインゴット鋳造用積層ルツボ及びその製造方法
JP5557334B2 (ja) * 2010-12-27 2014-07-23 コバレントマテリアル株式会社 シリコン単結晶引上げ用シリカガラスルツボ
WO2013105165A1 (ja) * 2012-01-13 2013-07-18 信越石英株式会社 単結晶シリコン引き上げ用シリカ容器及びその製造方法
CN102586856B (zh) * 2012-02-01 2015-03-11 江西赛维Ldk太阳能高科技有限公司 一种提高硅锭利用率和籽晶使用次数的坩埚及其制备方法
KR101516602B1 (ko) * 2012-03-23 2015-05-04 신에쯔 세끼에이 가부시키가이샤 단결정 실리콘 인상용 실리카 용기 및 그 제조방법
US20140182510A1 (en) * 2012-05-15 2014-07-03 Shin-Etsu Quartz Products Co., Ltd. Single-crystal silicon pulling silica container and producing method thereof
JP5595615B2 (ja) * 2012-05-16 2014-09-24 信越石英株式会社 単結晶シリコン引き上げ用シリカ容器及びその製造方法
TWI588114B (zh) * 2014-08-05 2017-06-21 興亞玻璃股份有限公司 白色玻璃容器及其製造方法
PL3218317T3 (pl) 2014-11-13 2019-03-29 Gerresheimer Glas Gmbh Filtr cząstek urządzenia do wytwarzania szkła, jednostka tłoka, głowica dmuchu, wspornik głowicy dmuchu i urządzenie do wytwarzania szkła, przystosowane lub zawierające filtr
JP6743753B2 (ja) * 2017-04-27 2020-08-19 株式会社Sumco シリコン単結晶の引上げ方法
CN107324821B (zh) * 2017-07-12 2020-06-09 瑞泰科技股份有限公司 一种具有高吸收率、高热导率的cfb锅炉水冷壁用碳化硅耐磨浇注料
CN114672881A (zh) * 2020-12-24 2022-06-28 中国科学院物理研究所 碳化钽坩埚及其制备方法和应用
WO2023204146A1 (ja) * 2022-04-18 2023-10-26 信越石英株式会社 単結晶シリコンインゴット引き上げ用石英ガラスるつぼ

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01197381A (ja) * 1988-02-03 1989-08-09 Mitsubishi Metal Corp シリコン単結晶引上げ用石英ルツボ
JPH05105577A (ja) * 1990-06-25 1993-04-27 Shinetsu Quartz Prod Co Ltd シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
JP3100836B2 (ja) * 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
JP2003095678A (ja) * 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
JP2009084113A (ja) * 2007-09-28 2009-04-23 Japan Siper Quarts Corp シリカガラスルツボとその製造方法および引き上げ方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01148718A (ja) 1987-12-03 1989-06-12 Shin Etsu Handotai Co Ltd 石英るつぼの製造方法
US4935046A (en) 1987-12-03 1990-06-19 Shin-Etsu Handotai Company, Limited Manufacture of a quartz glass vessel for the growth of single crystal semiconductor
JPH0729871B2 (ja) 1987-12-03 1995-04-05 信越半導体 株式会社 単結晶引き上げ用石英るつぼ
JPH0422861A (ja) 1990-05-17 1992-01-27 Matsushita Seiko Co Ltd 炭酸ガス検知装置
JPH0729871A (ja) 1993-06-25 1995-01-31 Toshiba Corp 表面処理方法および表面処理装置
JPH07206451A (ja) 1993-12-29 1995-08-08 Nippon Steel Corp 合成石英ガラスの製造方法
JPH07277743A (ja) 1994-04-04 1995-10-24 Nippon Steel Corp 合成石英ガラスの製造方法
JP3702904B2 (ja) 1994-04-04 2005-10-05 セイコーエプソン株式会社 合成石英ガラスの製造方法
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
JP3764776B2 (ja) 1996-03-18 2006-04-12 信越石英株式会社 単結晶引き上げ用石英ガラスるつぼ及びその製造方法
JP3798849B2 (ja) 1996-07-09 2006-07-19 信越石英株式会社 石英ルツボの製造装置及び方法
JP4094093B2 (ja) * 1997-09-19 2008-06-04 株式会社日本製鋼所 レーザアニール装置
JP3798907B2 (ja) 1997-09-30 2006-07-19 信越石英株式会社 シリコン単結晶製造用石英ガラスるつぼおよび その製造方法
US6106610A (en) 1997-09-30 2000-08-22 Heraeus Quarzglas Gmbh & Co. Kg Quartz glass crucible for producing silicone single crystal and method for producing the crucible
JP3621282B2 (ja) * 1999-02-25 2005-02-16 東芝セラミックス株式会社 石英ガラスルツボおよびその製造方法
EP1094039B1 (en) * 1999-04-06 2015-04-29 Wacom Manufacturing Co., Ltd. Method for manufacturing quartz glass crucible
JP3765368B2 (ja) * 1999-06-01 2006-04-12 東芝セラミックス株式会社 石英ガラスルツボおよびその製造方法
DE10114484C2 (de) 2001-03-24 2003-10-16 Heraeus Quarzglas Verfahren für die Herstellung eines Komposit-Werkstoffs mit einem SiO¶2¶-Gehalt von mindestens 99 Gew.-%, und Verwendung des nach dem Verfahren erhaltenen Komposit-Werkstoffs
US6641663B2 (en) * 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
US7118789B2 (en) 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
JP4841764B2 (ja) * 2001-07-23 2011-12-21 信越石英株式会社 シリコン単結晶引上げ用石英ガラスるつぼの製造方法及び装置
DE10262015B3 (de) 2002-09-20 2004-07-15 Heraeus Quarzglas Gmbh & Co. Kg Verfahren für die Herstellung eines opaken Quarzglas-Kompositwerkstoffs
WO2004106247A1 (ja) * 2003-05-30 2004-12-09 Shin-Etsu Quartz Products Co., Ltd. シリコン単結晶引上げ用石英ガラスルツボ
JP5105577B2 (ja) * 2005-08-25 2012-12-26 東洋鋼鈑株式会社 マグネシウム合金成形加工体の製造方法およびマグネシウム合金成形加工体
TW200730672A (en) * 2005-11-29 2007-08-16 Japan Super Quartz Corp Quartz glass crucible, method of producing the same, and application thereof
JP4922355B2 (ja) * 2009-07-15 2012-04-25 信越石英株式会社 シリカ容器及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01197381A (ja) * 1988-02-03 1989-08-09 Mitsubishi Metal Corp シリコン単結晶引上げ用石英ルツボ
JPH05105577A (ja) * 1990-06-25 1993-04-27 Shinetsu Quartz Prod Co Ltd シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
JP3100836B2 (ja) * 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
JP2003095678A (ja) * 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
JP2009084113A (ja) * 2007-09-28 2009-04-23 Japan Siper Quarts Corp シリカガラスルツボとその製造方法および引き上げ方法

Also Published As

Publication number Publication date
CN102395535A (zh) 2012-03-28
JPWO2010137221A1 (ja) 2012-11-12
EP2436658A1 (en) 2012-04-04
CN102395535B (zh) 2014-07-02
US8915096B2 (en) 2014-12-23
KR101315684B1 (ko) 2013-10-10
US8420192B2 (en) 2013-04-16
EP2436658A4 (en) 2015-04-22
TWI405730B (zh) 2013-08-21
US20130227990A1 (en) 2013-09-05
WO2010137221A1 (ja) 2010-12-02
KR20120022885A (ko) 2012-03-12
TW201111305A (en) 2011-04-01
US20110114530A1 (en) 2011-05-19

Similar Documents

Publication Publication Date Title
JP4903288B2 (ja) シリカ容器及びその製造方法
JP4907735B2 (ja) シリカ容器及びその製造方法
JP4951040B2 (ja) シリカ容器及びその製造方法
TWI405728B (zh) Silica container and method of manufacturing the same
JP4969632B2 (ja) シリカ粉及びシリカ容器並びにそれらの製造方法
JP4922355B2 (ja) シリカ容器及びその製造方法
JP5106340B2 (ja) シリカ容器及びその製造方法
JP5462423B1 (ja) 単結晶シリコン引き上げ用シリカ容器及びその製造方法
TWI463045B (zh) Silicone container for single crystal silicon pulling and its manufacturing method

Legal Events

Date Code Title Description
TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111227

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120104

R150 Certificate of patent or registration of utility model

Ref document number: 4903288

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150113

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S531 Written request for registration of change of domicile

Free format text: JAPANESE INTERMEDIATE CODE: R313531

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250