JP4902953B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP4902953B2 JP4902953B2 JP2004287634A JP2004287634A JP4902953B2 JP 4902953 B2 JP4902953 B2 JP 4902953B2 JP 2004287634 A JP2004287634 A JP 2004287634A JP 2004287634 A JP2004287634 A JP 2004287634A JP 4902953 B2 JP4902953 B2 JP 4902953B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- manufacturing
- film
- insulating film
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54406—Marks applied to semiconductor devices or parts comprising alphanumeric information
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54493—Peripheral marks on wafers, e.g. orientation flats, notches, lot number
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Description
2 シリコン窒化膜
3 ウエハ識別マーク
4 シリコン層
5 サファイア層
6 シリコン酸化膜
7 開口部
Claims (13)
- サファイア基板上にシリコン層が形成され且つ前記シリコン層の上面を除く部分に保護膜が形成されているSOS基板の前記シリコン層にレーザにより前記サファイア基板に到達する溝を形成する工程と、前記溝を覆う絶縁膜を700℃以下の温度により形成する工程と、その後700℃より高い熱処理を施す工程とを備えたことを特徴とする半導体装置の形成方法。
- 前記溝は識別マークであることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記絶縁膜はCVDシリコン酸化膜であることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記絶縁膜はCVDシリコン窒化膜であることを特徴とする請求項2記載の半導体装置の製造方法。
- 前記絶縁膜は積層膜であることを特徴とする請求項2記載の半導体装置の製造方法。
- サファイア基板上にシリコン層が形成され且つ前記シリコン層の上面を除く部分に保護膜が形成されているSOS基板の前記シリコン層の一部にレーザを照射し前記サファイア基板の表面を損傷させる工程と、前記サファイア層の表面に700℃以下の熱処理により絶縁膜を形成する工程と、その後700℃より高い熱処理を施す工程とを備えたことを特徴とする半導体装置の形成方法
- 前記絶縁膜はCVDシリコン酸化膜であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記絶縁膜はCVDシリコン窒化膜であることを特徴とする請求項6記載の半導体装置の製造方法。
- 前記絶縁膜は積層膜であることを特徴とする請求項6記載の半導体装置の製造方法。
- サファイア基板上にシリコン層が形成され且つ前記シリコン層の上面を除く部分に保護膜が形成されているSOS基板の前記シリコン層の一部をエッチングし前記サファイア基板の表面を露出させる工程と、前記サファイア層の表面に700℃以下の熱処理により絶縁膜を形成する工程と、その後700℃より高い熱処理を施す工程とを備えたことを特徴とする半導体装置の形成方法。
- 前記絶縁膜はCVDシリコン酸化膜であることを特徴とする請求項10記載の半導体装置の製造方法。
- 前記絶縁膜はCVDシリコン窒化膜であることを特徴とする請求項10記載の半導体装置の製造方法。
- 前記絶縁膜は積層膜であることを特徴とする請求項10記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004287634A JP4902953B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置の製造方法 |
US11/118,361 US7390702B2 (en) | 2004-09-30 | 2005-05-02 | Method for manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004287634A JP4902953B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006100724A JP2006100724A (ja) | 2006-04-13 |
JP4902953B2 true JP4902953B2 (ja) | 2012-03-21 |
Family
ID=36099744
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004287634A Expired - Fee Related JP4902953B2 (ja) | 2004-09-30 | 2004-09-30 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7390702B2 (ja) |
JP (1) | JP4902953B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5443178B2 (ja) | 2010-01-06 | 2014-03-19 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法、半導体装置及び半導体ウエハへの印字方法 |
US10052848B2 (en) | 2012-03-06 | 2018-08-21 | Apple Inc. | Sapphire laminates |
US9221289B2 (en) | 2012-07-27 | 2015-12-29 | Apple Inc. | Sapphire window |
US9232672B2 (en) | 2013-01-10 | 2016-01-05 | Apple Inc. | Ceramic insert control mechanism |
US9632537B2 (en) | 2013-09-23 | 2017-04-25 | Apple Inc. | Electronic component embedded in ceramic material |
US9678540B2 (en) | 2013-09-23 | 2017-06-13 | Apple Inc. | Electronic component embedded in ceramic material |
US9154678B2 (en) | 2013-12-11 | 2015-10-06 | Apple Inc. | Cover glass arrangement for an electronic device |
US9225056B2 (en) | 2014-02-12 | 2015-12-29 | Apple Inc. | Antenna on sapphire structure |
US10406634B2 (en) | 2015-07-01 | 2019-09-10 | Apple Inc. | Enhancing strength in laser cutting of ceramic components |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5350672A (en) * | 1976-10-19 | 1978-05-09 | Mitsubishi Electric Corp | Production of substrate for semiconductor device |
JP3173106B2 (ja) | 1992-02-20 | 2001-06-04 | ソニー株式会社 | エピタキシャルウエハの形成方法 |
JPH0837137A (ja) | 1994-05-16 | 1996-02-06 | Sony Corp | Soi構造の半導体基板管理方法、識別マーク印字装置および識別マーク読取装置 |
US6185308B1 (en) * | 1997-07-07 | 2001-02-06 | Fujitsu Limited | Key recovery system |
JP4491851B2 (ja) | 1999-04-06 | 2010-06-30 | ソニー株式会社 | 表面に識別パターンを有する多層基板の製造方法 |
EP1122788B1 (en) * | 1999-07-02 | 2009-03-25 | Mitsubishi Materials Silicon Corporation | Method of manufacturing of an soi substrate |
JP2001102379A (ja) * | 1999-09-28 | 2001-04-13 | Asahi Kasei Microsystems Kk | 半導体装置形成用基板に対する保護膜形成方法 |
US6348991B1 (en) * | 1999-10-29 | 2002-02-19 | Intel Corporation | Integrated circuit with opposed spatial light modulator and processor |
US20010038153A1 (en) * | 2000-01-07 | 2001-11-08 | Kiyofumi Sakaguchi | Semiconductor substrate and process for its production |
JP2001257139A (ja) | 2000-01-07 | 2001-09-21 | Canon Inc | 半導体基板とその作製方法 |
JP2001298169A (ja) * | 2000-04-13 | 2001-10-26 | Seiko Epson Corp | 半導体装置とその製造方法 |
US6815308B2 (en) * | 2002-08-15 | 2004-11-09 | Micron Technology, Inc. | Use of a dual-tone resist to form photomasks including alignment mark protection, intermediate semiconductor device structures and bulk semiconductor device substrates |
TWI231606B (en) * | 2003-11-10 | 2005-04-21 | Shih-Hsien Tseng | Image pickup device and a manufacturing method thereof |
US7129114B2 (en) * | 2004-03-10 | 2006-10-31 | Micron Technology, Inc. | Methods relating to singulating semiconductor wafers and wafer scale assemblies |
US7419852B2 (en) * | 2004-08-27 | 2008-09-02 | Micron Technology, Inc. | Low temperature methods of forming back side redistribution layers in association with through wafer interconnects, semiconductor devices including same, and assemblies |
-
2004
- 2004-09-30 JP JP2004287634A patent/JP4902953B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-02 US US11/118,361 patent/US7390702B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20060068534A1 (en) | 2006-03-30 |
JP2006100724A (ja) | 2006-04-13 |
US7390702B2 (en) | 2008-06-24 |
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