JP4893965B2 - アルミニウム、銅、およびタングステンの構造の選択的ニッケルめっき - Google Patents
アルミニウム、銅、およびタングステンの構造の選択的ニッケルめっき Download PDFInfo
- Publication number
- JP4893965B2 JP4893965B2 JP2007530117A JP2007530117A JP4893965B2 JP 4893965 B2 JP4893965 B2 JP 4893965B2 JP 2007530117 A JP2007530117 A JP 2007530117A JP 2007530117 A JP2007530117 A JP 2007530117A JP 4893965 B2 JP4893965 B2 JP 4893965B2
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- Prior art keywords
- nickel
- tungsten
- bond pad
- plating
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims description 369
- 229910052759 nickel Inorganic materials 0.000 title claims description 186
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 141
- 238000007747 plating Methods 0.000 title claims description 99
- 229910052782 aluminium Inorganic materials 0.000 title claims description 64
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 61
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 45
- 239000010949 copper Substances 0.000 title claims description 26
- 229910052802 copper Inorganic materials 0.000 title claims description 26
- 239000004065 semiconductor Substances 0.000 claims description 129
- 229910052721 tungsten Inorganic materials 0.000 claims description 88
- 239000010937 tungsten Substances 0.000 claims description 88
- 239000000243 solution Substances 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 31
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 20
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 13
- 230000003213 activating effect Effects 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- -1 palladium (II) ions Chemical class 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 8
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 7
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 7
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 5
- 239000003638 chemical reducing agent Substances 0.000 claims description 5
- 229910001379 sodium hypophosphite Inorganic materials 0.000 claims description 5
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 4
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 4
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 3
- 150000002815 nickel Chemical class 0.000 claims description 3
- UQPSGBZICXWIAG-UHFFFAOYSA-L nickel(2+);dibromide;trihydrate Chemical compound O.O.O.Br[Ni]Br UQPSGBZICXWIAG-UHFFFAOYSA-L 0.000 claims description 3
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 claims description 3
- 239000012279 sodium borohydride Substances 0.000 claims description 3
- 229910000033 sodium borohydride Inorganic materials 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- DGPBVJWCIDNDPN-UHFFFAOYSA-N 2-(dimethylamino)benzaldehyde Chemical compound CN(C)C1=CC=CC=C1C=O DGPBVJWCIDNDPN-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 150000003871 sulfonates Chemical class 0.000 claims 1
- 150000003657 tungsten Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 142
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 30
- 239000012190 activator Substances 0.000 description 26
- 238000005530 etching Methods 0.000 description 18
- 229910000679 solder Inorganic materials 0.000 description 18
- 239000012790 adhesive layer Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 10
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013043 chemical agent Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000005553 drilling Methods 0.000 description 4
- 238000000227 grinding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000007373 indentation Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 238000009736 wetting Methods 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002893 slag Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 229940045714 alkyl sulfonate alkylating agent Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 1
- 150000001639 boron compounds Chemical class 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 235000015165 citric acid Nutrition 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000001630 malic acid Substances 0.000 description 1
- 235000011090 malic acid Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- VILMUCRZVVVJCA-UHFFFAOYSA-M sodium glycolate Chemical compound [Na+].OCC([O-])=O VILMUCRZVVVJCA-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1603—Process or apparatus coating on selected surface areas
- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1635—Composition of the substrate
- C23C18/1637—Composition of the substrate metallic substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1831—Use of metal, e.g. activation, sensitisation with noble metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1803—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces
- C23C18/1824—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment
- C23C18/1827—Pretreatment of the material to be coated of metallic material surfaces or of a non-specific material surfaces by chemical pretreatment only one step pretreatment
- C23C18/1834—Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
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Description
本発明は半導体の製造に関する。より具体的には、本発明はアルミニウム、銅、またはタングステンの構造をニッケルで選択的にめっきする方法に関する。
集積回路を有する半導体デバイスは、フォトリソグラフィを用いて様々なその他のプロセスを組み合わせて、半導体ウエーハの上に多数の同一の回路パターンを組み付けることによって製造される。半導体デバイスの収量の増大とその性能の向上を達成するために、所定のサイズの半導体基板の上に組み付けられる半導体デバイスの密度を増大させることが、半導体製造業者の絶え間のない目標である。近年において、半導体の組立てにおいて半導体デバイスの密度を増大させる努力も強められている。半導体の組立てにおいて半導体デバイスの密度を増大させるための一つの手段は、半導体のダイを互いに積層させることである。半導体のダイの中にビアホールすなわちスルーホールを形成することによって、半導体のダイは相互に連結される。ビアは導電性の材料で充填され、それにより半導体のダイの活性表面の上に組み付けられた集積回路にビアが電気的に接続される。従って、ビアは半導体ダイの活性表面からそれぞれの裏面への導電性通路を与え、それにより別の半導体ダイまたはキャリア基板の外部電気接点への半導体ダイの裏面の相互接続を可能にする。ビアはエッチング、レーザーによる削摩(ablation)または孔あけ、あるいはこれらの組合せによって形成される。ビアをエッチングするには、フォトレジストのフォトリソグラフィ加工と、それに続くウエット(化学)エッチングまたはドライ(反応性イオン)エッチングを用いる。レーザーによる孔あけは、半導体材料を除去することによってビアを形成し、それにより半導体ダイの全体の厚さを通して延びるスルーホールを形成するために用いられてきた。
本発明は、中間の(intermediate)半導体デバイス構造の上にニッケルを選択的にめっきする方法に関する。この方法は、少なくとも一つのアルミニウムまたは銅の構造と少なくとも一つのタングステンの構造を半導体基板の上に有する中間の半導体デバイス構造を用意することを含む。少なくとも一つのアルミニウムまたは銅の構造と少なくとも一つのタングステンの構造のうちの一方はニッケルめっきされ、少なくとも一つのアルミニウムまたは銅の構造と少なくとも一つのタングステンの構造の他方はめっきされないまま残る。ニッケルは無電解めっきされてもよい。少なくとも一つのアルミニウムまたは銅の構造は少なくとも一つのアルミニウムまたは銅のボンドパッドであってもよく、そして少なくとも一つのタングステンの構造は内部にタングステンの層を有する少なくとも一つのビアであってもよい。一つの態様において、少なくとも一つのアルミニウムまたは銅のボンドパッドはニッケルめっきされてもよく、一方、内部にタングステンの層を有する少なくとも一つのビアはめっきされないまま残る。別の態様において、内部にタングステンの層を有する少なくとも一つのビアはニッケルでめっきされてもよく、一方、少なくとも一つのアルミニウムまたは銅のボンドパッドはめっきされないまま残る。
半導体基板の上に存在するアルミニウムの構造とタングステンの構造のいずれかの上にニッケルを選択的にめっきする方法が開示される。半導体基板はアルミニウムの構造とタングステンの構造の両方を有する。一つの態様において、タングステンの構造の上にニッケルを付着させることなく、アルミニウムの構造がニッケルでめっきされる。アルミニウムの構造は、アルミニウムに対して選択的なニッケルめっきの化学剤を用いてニッケルめっきされる。ここで用いるとき、「ニッケルめっきの化学剤(nickel plating chemistry)」という用語は、構造を洗浄するか、構造を活性化するか、あるいは構造をニッケルでめっきするために用いられる化学剤を含む。別の態様において、タングステンに対して選択的なニッケルめっきの化学剤を用いて、アルミニウムの構造をニッケルめっきすることなく、タングステンの構造がニッケルでめっきされてもよい。別の態様において、タングステンの構造とアルミニウムの構造がニッケルで実質的に同時にめっきされてよい。
Claims (15)
- 中間の半導体デバイス構造の上にニッケルを選択的にめっきする方法であって、
タングステンで裏打ちされた少なくとも一つのビアと、アルミニウム又は銅からなる少なくとも一つのボンドパッドと、を半導体基板上に有する中間の半導体デバイス構造を形成することと、
前記少なくとも一つのビア内の前記タングステンを露出しながら、前記少なくとも一つのボンドパッドの露出面をニッケルめっきすることと、
前記少なくとも一つのボンドパッドの前記露出面をニッケルめっきした後に、前記タングステンの露出面をニッケルめっきすることと、
を含む方法。 - 中間の半導体デバイス構造の上にニッケルをめっきする方法であって、
タングステンで裏打ちされた少なくとも一つのビアと、アルミニウム又は銅からなる少なくとも一つのボンドパッドと、を半導体基板上に有する中間の半導体デバイス構造を形成することと、
前記タングステン及び前記少なくとも一つのボンドパッドの各々の露出面を同時にニッケルめっきすることと、
を含む方法。 - タングステンで裏打ちされた少なくとも一つのビアと、アルミニウム又は銅からなる少なくとも一つのボンドパッドとを有する中間の半導体デバイス構造を形成することは、アルミニウムのボンドパッドを有する前記中間の半導体デバイス構造を形成することを含む、請求項1または2に記載の方法。
- タングステンで裏打ちされた少なくとも一つのビアと、アルミニウム又は銅からなる少なくとも一つのボンドパッドとを有する中間の半導体デバイス構造を形成することは、タングステンの層で裏打ちされた前記少なくとも一つのビアを有する前記中間の半導体デバイス構造を形成することを含む、請求項1または2に記載の方法。
- 前記タングステン及び前記少なくとも一つのボンドパッドの各々の露出面を同時にニッケルめっきすることは、アルミニウム、銅、またはタングステンに対して選択的なニッケルめっきの化学剤を選択することを含む、請求項2に記載の方法。
- 前記タングステン及び前記少なくとも一つのボンドパッドの各々の露出面を同時にニッケルめっきすることは、前記タングステン及び前記少なくとも一つのボンドパッドの各々の前記露出面をニッケルめっきに対して活性化することを含む、請求項2に記載の方法。
- 前記タングステン及び前記少なくとも一つのボンドパッドの各々の前記露出面をニッケルめっきに対して活性化することは、前記中間の半導体デバイス構造を亜鉛酸塩の溶液に晒し、それによって前記少なくとも一つのボンドパッドの前記露出面を活性化することを含む、請求項6に記載の方法。
- 前記中間の半導体デバイス構造を亜鉛酸塩の溶液に晒すことは、前記中間の半導体デバイス構造を酸化亜鉛と水酸化ナトリウムを含む水溶液に晒すことを含む、請求項7に記載の方法。
- 前記タングステン及び前記少なくとも一つのボンドパッドの各々の前記露出面をニッケルめっきに対して活性化することは、前記中間の半導体デバイス構造をパラジウムの溶液に晒し、それによって前記タングステンを活性化することを含む、請求項6に記載の方法。
- 前記中間の半導体デバイス構造をパラジウムの溶液に晒すことは、前記中間の半導体デバイス構造をパラジウム(II)イオンを含む水溶液に晒すことを含む、請求項9に記載の方法。
- 前記少なくとも一つのビア内の前記タングステンを露出しながら前記少なくとも一つのボンドパッドの露出面をニッケルめっきすることは、前記少なくとも一つのビア内の前記タングステンを露出しながら、前記少なくとも一つのボンドパッドの活性化された表面をニッケルめっきすることを含む、請求項1に記載の方法。
- 前記少なくとも一つのビア内の前記タングステンを露出しながら前記少なくとも一つのボンドパッドの露出面をニッケルめっきすることは、前記タングステンをめっきしないまま残しながら、前記少なくとも一つのボンドパッドの前記露出面をニッケルめっきすることを含む、請求項1に記載の方法。
- 前記少なくとも一つのボンドパッドの前記露出面をニッケルめっきした後に、前記タングステンの露出面をニッケルめっきすることは、活性化されたタングステンをニッケルめっきすることを含む、請求項1に記載の方法。
- 前記少なくとも一つのボンドパッドの前記露出面をニッケルめっきした後に、前記タングステンの露出面をニッケルめっきすることは、前記タングステンの前記露出面をニッケルで無電解めっきすることを含む、請求項1に記載の方法。
- 前記タングステン及び前記少なくとも一つのボンドパッドの各々の露出面を同時にニッケルめっきすることは、硫酸ニッケル、塩化ニッケル、硫酸ニッケル、臭化ニッケル、フロオロホウ酸ニッケル、スルホン酸ニッケル、スルファミン酸ニッケル、およびニッケルアルキルスルホネートからなる群から選択されるニッケル塩と、次亜リン酸ナトリウム、ジメチルアミンボラン、ホウ水素化ナトリウム、およびジメチルアミノベンズアルデヒドからなる群から選択される還元剤とを含む無電解ニッケルめっき溶液の中に前記中間の半導体デバイス構造を浸漬することを含む、請求項2に記載の方法。
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US10/934,635 US7279407B2 (en) | 2004-09-02 | 2004-09-02 | Selective nickel plating of aluminum, copper, and tungsten structures |
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WO2006028715A2 (en) | 2006-03-16 |
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US8647982B2 (en) | 2014-02-11 |
US10062608B2 (en) | 2018-08-28 |
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US20070132105A1 (en) | 2007-06-14 |
WO2006028715A3 (en) | 2007-09-07 |
US20180358263A1 (en) | 2018-12-13 |
US20140154879A1 (en) | 2014-06-05 |
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