JP4889152B2 - 電磁界発生器および操作方法 - Google Patents

電磁界発生器および操作方法 Download PDF

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Publication number
JP4889152B2
JP4889152B2 JP2000569422A JP2000569422A JP4889152B2 JP 4889152 B2 JP4889152 B2 JP 4889152B2 JP 2000569422 A JP2000569422 A JP 2000569422A JP 2000569422 A JP2000569422 A JP 2000569422A JP 4889152 B2 JP4889152 B2 JP 4889152B2
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Japan
Prior art keywords
magnetic
current
electromagnetic
magnetic field
assembly
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JP2000569422A
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Japanese (ja)
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JP2002524828A5 (enExample
JP2002524828A (ja
Inventor
ハリ， エス． ヘッジ，
ミハイ， エス． リスカ，
アラン， ヴィー． ヘイズ，
アブラハム， ジェイ． ネイヴィー，
ロジャー， ピー． フレムジェン，
Original Assignee
ビーコ・インスツルメンツ・インコーポレーテッド
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Publication of JP2002524828A5 publication Critical patent/JP2002524828A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2000569422A 1998-09-09 1999-09-07 電磁界発生器および操作方法 Expired - Fee Related JP4889152B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/150,274 1998-09-09
US09/150,274 US6545580B2 (en) 1998-09-09 1998-09-09 Electromagnetic field generator and method of operation
PCT/US1999/020470 WO2000014768A1 (en) 1998-09-09 1999-09-07 Electromagnetic field generator and method of operation

Publications (3)

Publication Number Publication Date
JP2002524828A JP2002524828A (ja) 2002-08-06
JP2002524828A5 JP2002524828A5 (enExample) 2006-11-02
JP4889152B2 true JP4889152B2 (ja) 2012-03-07

Family

ID=22533800

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000569422A Expired - Fee Related JP4889152B2 (ja) 1998-09-09 1999-09-07 電磁界発生器および操作方法

Country Status (5)

Country Link
US (1) US6545580B2 (enExample)
EP (1) EP1112588A1 (enExample)
JP (1) JP4889152B2 (enExample)
TW (1) TW448706B (enExample)
WO (1) WO2000014768A1 (enExample)

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US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
JP4009087B2 (ja) * 2001-07-06 2007-11-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法
US7374636B2 (en) * 2001-07-06 2008-05-20 Applied Materials, Inc. Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
AU2003270496A1 (en) * 2002-09-09 2004-03-29 Oster Magnetics, Inc. Apparatus for manipulating magnetic fields
US7458335B1 (en) 2002-10-10 2008-12-02 Applied Materials, Inc. Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils
US7422654B2 (en) * 2003-02-14 2008-09-09 Applied Materials, Inc. Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor
US7119645B2 (en) * 2003-02-25 2006-10-10 The University Of North Carolina Methods and systems for controlling motion of and tracking a mechanically unattached probe
US20060061443A1 (en) * 2003-10-14 2006-03-23 Oster Magnetics, Inc. Apparatus for manipulating magnetic fields
GB2409581B (en) * 2003-12-23 2007-09-12 Trikon Technologies Ltd Magnet assemblies
US7403089B2 (en) * 2003-12-23 2008-07-22 Aviza Technology Limited Magnet assemblies
WO2006020187A2 (en) * 2004-07-16 2006-02-23 The University Of North Carolina At Chapel Hill Methods, systems and computer program products for full spectrum projection
US7538546B2 (en) * 2006-11-10 2009-05-26 Infinitum Solutions, Inc. In-plane magnetic field generation and testing of magnetic sensor
US8490469B2 (en) * 2007-02-22 2013-07-23 The University Of North Carolina Methods and systems for multiforce high throughput screening
DE102007041608A1 (de) * 2007-09-03 2009-03-05 Suss Microtec Test Systems Gmbh Prober zum Testen von Bauelementen
US7772571B2 (en) * 2007-10-08 2010-08-10 Advanced Ion Beam Technology, Inc. Implant beam utilization in an ion implanter
US7817463B2 (en) * 2008-06-30 2010-10-19 Qualcomm Incorporated System and method to fabricate magnetic random access memory
US7839254B2 (en) * 2008-12-04 2010-11-23 Moxtek, Inc. Transformer with high voltage isolation
WO2010151780A2 (en) 2009-06-25 2010-12-29 The University Of North Carolina At Chapel Hill Methods and systems for using actuated surface-attached posts for assessing biofluid rheology
US8773020B2 (en) * 2010-10-22 2014-07-08 Applied Materials, Inc. Apparatus for forming a magnetic field and methods of use thereof
US9269546B2 (en) 2010-10-22 2016-02-23 Applied Materials, Inc. Plasma reactor with electron beam plasma source having a uniform magnetic field
US9952149B2 (en) 2012-11-30 2018-04-24 The University Of North Carolina At Chapel Hill Methods, systems, and computer readable media for determining physical properties of a specimen in a portable point of care diagnostic device
WO2018048891A1 (en) 2016-09-06 2018-03-15 Apple Inc. Wirelessly charged devices
TWI633758B (zh) * 2017-06-23 2018-08-21 大銀微系統股份有限公司 Angular position sensing device
CN109425373A (zh) * 2017-09-04 2019-03-05 大银微系统股份有限公司 角位置感测装置
US10950378B2 (en) 2018-03-22 2021-03-16 The Chinese University Of Hong Kong Methods and systems for controlling electromagnetic field generators
CN113416938B (zh) * 2021-08-25 2021-11-09 陛通半导体设备(苏州)有限公司 可调节薄膜应力的溅射设备和方法

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US4222814A (en) 1978-01-26 1980-09-16 Sotek Corporation Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound
JPS5780713A (en) 1980-11-10 1982-05-20 Canon Inc Manufacture of magnetic thin film by sputtering
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JPH0387365A (ja) * 1989-08-30 1991-04-12 Sumitomo Metal Ind Ltd 平行磁場印加用電磁石を備えたスパッタリング装置
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Also Published As

Publication number Publication date
EP1112588A1 (en) 2001-07-04
WO2000014768A1 (en) 2000-03-16
US6545580B2 (en) 2003-04-08
TW448706B (en) 2001-08-01
JP2002524828A (ja) 2002-08-06
US20020047767A1 (en) 2002-04-25

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