TW448706B - Electromagnetic field generator and method of operation - Google Patents
Electromagnetic field generator and method of operation Download PDFInfo
- Publication number
- TW448706B TW448706B TW088115564A TW88115564A TW448706B TW 448706 B TW448706 B TW 448706B TW 088115564 A TW088115564 A TW 088115564A TW 88115564 A TW88115564 A TW 88115564A TW 448706 B TW448706 B TW 448706B
- Authority
- TW
- Taiwan
- Prior art keywords
- magnetic
- patent application
- magnetic field
- current
- electromagnetic
- Prior art date
Links
- 230000005672 electromagnetic field Effects 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 47
- 230000005291 magnetic effect Effects 0.000 claims abstract description 179
- 230000008021 deposition Effects 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 23
- 238000007737 ion beam deposition Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000151 deposition Methods 0.000 claims description 26
- 238000010884 ion-beam technique Methods 0.000 claims description 15
- 239000000696 magnetic material Substances 0.000 claims description 14
- 238000004804 winding Methods 0.000 claims description 10
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 5
- 241000220317 Rosa Species 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 230000005684 electric field Effects 0.000 claims description 4
- 230000005389 magnetism Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims 5
- 238000000429 assembly Methods 0.000 claims 4
- 230000000712 assembly Effects 0.000 claims 4
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000000725 suspension Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 14
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000009825 accumulation Methods 0.000 abstract description 4
- 238000013461 design Methods 0.000 abstract description 3
- 238000012423 maintenance Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000005292 diamagnetic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ROPGXTOGNYGGRA-UHFFFAOYSA-N [Fe].[Ni].[Ni] Chemical compound [Fe].[Ni].[Ni] ROPGXTOGNYGGRA-UHFFFAOYSA-N 0.000 description 1
- BYUSVXPNSOVAJC-UHFFFAOYSA-N [Mn].[Ir].[Pt] Chemical compound [Mn].[Ir].[Pt] BYUSVXPNSOVAJC-UHFFFAOYSA-N 0.000 description 1
- LMBUSUIQBONXAS-UHFFFAOYSA-N [Ti].[Fe].[Ni] Chemical compound [Ti].[Fe].[Ni] LMBUSUIQBONXAS-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 239000002885 antiferromagnetic material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005347 demagnetization Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 description 1
- 230000005426 magnetic field effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/150,274 US6545580B2 (en) | 1998-09-09 | 1998-09-09 | Electromagnetic field generator and method of operation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW448706B true TW448706B (en) | 2001-08-01 |
Family
ID=22533800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW088115564A TW448706B (en) | 1998-09-09 | 1999-09-09 | Electromagnetic field generator and method of operation |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6545580B2 (enExample) |
| EP (1) | EP1112588A1 (enExample) |
| JP (1) | JP4889152B2 (enExample) |
| TW (1) | TW448706B (enExample) |
| WO (1) | WO2000014768A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077377A (zh) * | 2008-06-30 | 2011-05-25 | 高通股份有限公司 | 用以制造磁性随机存取存储器的系统及方法 |
| TWI633758B (zh) * | 2017-06-23 | 2018-08-21 | 大銀微系統股份有限公司 | Angular position sensing device |
| CN109425373A (zh) * | 2017-09-04 | 2019-03-05 | 大银微系统股份有限公司 | 角位置感测装置 |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070048882A1 (en) * | 2000-03-17 | 2007-03-01 | Applied Materials, Inc. | Method to reduce plasma-induced charging damage |
| US8617351B2 (en) * | 2002-07-09 | 2013-12-31 | Applied Materials, Inc. | Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction |
| US8048806B2 (en) * | 2000-03-17 | 2011-11-01 | Applied Materials, Inc. | Methods to avoid unstable plasma states during a process transition |
| JP4009087B2 (ja) * | 2001-07-06 | 2007-11-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置における磁気発生装置、半導体製造装置および磁場強度制御方法 |
| US7374636B2 (en) * | 2001-07-06 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor |
| TWI283899B (en) * | 2002-07-09 | 2007-07-11 | Applied Materials Inc | Capacitively coupled plasma reactor with magnetic plasma control |
| AU2003270496A1 (en) * | 2002-09-09 | 2004-03-29 | Oster Magnetics, Inc. | Apparatus for manipulating magnetic fields |
| US7458335B1 (en) | 2002-10-10 | 2008-12-02 | Applied Materials, Inc. | Uniform magnetically enhanced reactive ion etching using nested electromagnetic coils |
| US7422654B2 (en) * | 2003-02-14 | 2008-09-09 | Applied Materials, Inc. | Method and apparatus for shaping a magnetic field in a magnetic field-enhanced plasma reactor |
| US7119645B2 (en) * | 2003-02-25 | 2006-10-10 | The University Of North Carolina | Methods and systems for controlling motion of and tracking a mechanically unattached probe |
| US20060061443A1 (en) * | 2003-10-14 | 2006-03-23 | Oster Magnetics, Inc. | Apparatus for manipulating magnetic fields |
| GB2409581B (en) * | 2003-12-23 | 2007-09-12 | Trikon Technologies Ltd | Magnet assemblies |
| US7403089B2 (en) * | 2003-12-23 | 2008-07-22 | Aviza Technology Limited | Magnet assemblies |
| WO2006020187A2 (en) * | 2004-07-16 | 2006-02-23 | The University Of North Carolina At Chapel Hill | Methods, systems and computer program products for full spectrum projection |
| US7538546B2 (en) * | 2006-11-10 | 2009-05-26 | Infinitum Solutions, Inc. | In-plane magnetic field generation and testing of magnetic sensor |
| US8490469B2 (en) * | 2007-02-22 | 2013-07-23 | The University Of North Carolina | Methods and systems for multiforce high throughput screening |
| DE102007041608A1 (de) * | 2007-09-03 | 2009-03-05 | Suss Microtec Test Systems Gmbh | Prober zum Testen von Bauelementen |
| US7772571B2 (en) * | 2007-10-08 | 2010-08-10 | Advanced Ion Beam Technology, Inc. | Implant beam utilization in an ion implanter |
| US7839254B2 (en) * | 2008-12-04 | 2010-11-23 | Moxtek, Inc. | Transformer with high voltage isolation |
| WO2010151780A2 (en) | 2009-06-25 | 2010-12-29 | The University Of North Carolina At Chapel Hill | Methods and systems for using actuated surface-attached posts for assessing biofluid rheology |
| US8773020B2 (en) * | 2010-10-22 | 2014-07-08 | Applied Materials, Inc. | Apparatus for forming a magnetic field and methods of use thereof |
| US9269546B2 (en) | 2010-10-22 | 2016-02-23 | Applied Materials, Inc. | Plasma reactor with electron beam plasma source having a uniform magnetic field |
| US9952149B2 (en) | 2012-11-30 | 2018-04-24 | The University Of North Carolina At Chapel Hill | Methods, systems, and computer readable media for determining physical properties of a specimen in a portable point of care diagnostic device |
| WO2018048891A1 (en) | 2016-09-06 | 2018-03-15 | Apple Inc. | Wirelessly charged devices |
| US10950378B2 (en) | 2018-03-22 | 2021-03-16 | The Chinese University Of Hong Kong | Methods and systems for controlling electromagnetic field generators |
| CN113416938B (zh) * | 2021-08-25 | 2021-11-09 | 陛通半导体设备(苏州)有限公司 | 可调节薄膜应力的溅射设备和方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4222814A (en) | 1978-01-26 | 1980-09-16 | Sotek Corporation | Method for forming a crystalline film for a paramagnetic sodium thallium type intermetallic compound |
| JPS5780713A (en) | 1980-11-10 | 1982-05-20 | Canon Inc | Manufacture of magnetic thin film by sputtering |
| US4391044A (en) | 1981-09-28 | 1983-07-05 | Tencor Instruments | Metrology instrument for measuring vertical profiles of integrated circuits and the like |
| JPH0644543B2 (ja) | 1984-01-18 | 1994-06-08 | 株式会社日立製作所 | 磁性膜デバイスの製造方法 |
| JPS60202526A (ja) | 1984-03-28 | 1985-10-14 | Konishiroku Photo Ind Co Ltd | 磁気記録媒体、その製造方法及び装置 |
| JPS6274073A (ja) | 1985-09-26 | 1987-04-04 | Hitachi Ltd | スパツタ装置 |
| JPH0691335B2 (ja) * | 1986-01-17 | 1994-11-14 | 三菱電機株式会社 | 電磁応用機器のシ−ルド |
| JPS63270461A (ja) | 1986-12-26 | 1988-11-08 | Teijin Ltd | 対向ターゲット式スパッタ装置 |
| US4949783A (en) | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| GB8905073D0 (en) | 1989-03-06 | 1989-04-19 | Nordiko Ltd | Ion gun |
| US5086259A (en) * | 1989-03-17 | 1992-02-04 | Hitachi, Ltd. | System for converging a plurality of electron beams in cathode ray tube |
| JPH0387365A (ja) * | 1989-08-30 | 1991-04-12 | Sumitomo Metal Ind Ltd | 平行磁場印加用電磁石を備えたスパッタリング装置 |
| US5026470A (en) | 1989-12-19 | 1991-06-25 | International Business Machines | Sputtering apparatus |
| US5045166A (en) | 1990-05-21 | 1991-09-03 | Mcnc | Magnetron method and apparatus for producing high density ionic gas discharge |
| JPH05251255A (ja) * | 1991-12-09 | 1993-09-28 | Ulvac Japan Ltd | 磁性薄膜形成装置 |
| DE69324849T2 (de) | 1992-04-16 | 1999-09-23 | Mitsubishi Jukogyo K.K., Tokio/Tokyo | Verfahren und Vorrichtung zur Plasma-unterstützten chemischen Dampfphasen-Abscheidung |
| US5290416A (en) | 1992-07-10 | 1994-03-01 | Read-Rite Corporation | Unidirectional field generator |
| TW293841B (enExample) | 1992-12-11 | 1996-12-21 | Sharp Kk | |
| US5455197A (en) | 1993-07-16 | 1995-10-03 | Materials Research Corporation | Control of the crystal orientation dependent properties of a film deposited on a semiconductor wafer |
| KR100291787B1 (ko) * | 1993-09-23 | 2001-09-17 | 김순택 | 포커스특성을개선한컨버전스요크 |
| US5589039A (en) | 1995-07-28 | 1996-12-31 | Sony Corporation | In-plane parallel bias magnetic field generator for sputter coating magnetic materials onto substrates |
| GB9609470D0 (en) * | 1996-05-07 | 1996-07-10 | Nordiko Ltd | Magnet array |
| US5877666A (en) * | 1997-03-12 | 1999-03-02 | Lucent Technologies Inc. | Stackable, passively-tunable, cost-reduced inductor |
| JP4170439B2 (ja) * | 1997-05-06 | 2008-10-22 | キヤノンアネルバ株式会社 | スパッタリング装置およびその磁界発生装置 |
-
1998
- 1998-09-09 US US09/150,274 patent/US6545580B2/en not_active Expired - Fee Related
-
1999
- 1999-09-07 WO PCT/US1999/020470 patent/WO2000014768A1/en not_active Ceased
- 1999-09-07 JP JP2000569422A patent/JP4889152B2/ja not_active Expired - Fee Related
- 1999-09-07 EP EP99968735A patent/EP1112588A1/en not_active Withdrawn
- 1999-09-09 TW TW088115564A patent/TW448706B/zh not_active IP Right Cessation
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077377A (zh) * | 2008-06-30 | 2011-05-25 | 高通股份有限公司 | 用以制造磁性随机存取存储器的系统及方法 |
| CN102077377B (zh) * | 2008-06-30 | 2013-10-30 | 高通股份有限公司 | 用以制造磁性随机存取存储器的系统及方法 |
| TWI633758B (zh) * | 2017-06-23 | 2018-08-21 | 大銀微系統股份有限公司 | Angular position sensing device |
| CN109425373A (zh) * | 2017-09-04 | 2019-03-05 | 大银微系统股份有限公司 | 角位置感测装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4889152B2 (ja) | 2012-03-07 |
| EP1112588A1 (en) | 2001-07-04 |
| WO2000014768A1 (en) | 2000-03-16 |
| US6545580B2 (en) | 2003-04-08 |
| JP2002524828A (ja) | 2002-08-06 |
| US20020047767A1 (en) | 2002-04-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |