TW201511162A - 用於磁性裝置之厚可磁化膜之沈積 - Google Patents

用於磁性裝置之厚可磁化膜之沈積 Download PDF

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TW201511162A
TW201511162A TW103123514A TW103123514A TW201511162A TW 201511162 A TW201511162 A TW 201511162A TW 103123514 A TW103123514 A TW 103123514A TW 103123514 A TW103123514 A TW 103123514A TW 201511162 A TW201511162 A TW 201511162A
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sputtering
magnetron
film
central axis
magnetic
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Frank M Cerio
Robert Hieronymi
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Veeco Instr Inc
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
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    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
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Abstract

用於以大於200奈米/分鐘之生長速率生長NiFe合金之磁性膜之PVD室產生展現以下各項之膜：小於±2度之磁偏斜；小於±2度之磁分散；大於2%之DR/R；及小於50MPa之膜應力。在50瓦至9千瓦之DC功率及3毫托至8毫托之壓力下在2英吋至4英吋之距離處濺鍍NiFe合金。該室使用具有配置在外圈及內圈之磁鐵之獨特場成形磁控管，該等外圈及內圈圍繞該磁控管之周邊延伸，惟在其中該等內圈及外圈實質上朝向該磁控管之中心軸偏離之兩個徑向相對區域中除外。

Description

用於磁性裝置之厚可磁化膜之沈積
本發明一般而言係關於薄膜磁性裝置(諸如傳感器、感測器、記錄頭及隨機存取記憶體)及其製作方法。
使用薄膜沈積技術來在下伏基板上形成薄膜。存在數種類型之薄膜沈積技術，包含物理汽相沈積、化學汽相沈積、原子層沈積及其他。
在磁性裝置之製造中藉由基板上之磁性材料之薄膜之沈積而使用薄膜沈積技術。此等薄膜可然後用於製作各種各樣之裝置，包含磁性傳感器/感測器(AMR)、磁性記錄(GMR)及磁性隨機存取記憶體(MRAM)。為達成具有可忽略磁滯之良好裝置敏感性，NiFe膜內之磁域必須沿相同方向對準。此對準藉由在將所沈積粒子對準至通常在膜之平面中之所謂的「易磁化軸」或磁化(M)之優選定向之強磁場中沈積膜而達成，如圖1中可見。在均勻及可預測磁性定向下，可達成良好裝置效能。
高導磁合金(Ni81Fe19)係常用於薄膜的具有高導磁率、高磁性飽和及低矯頑力之鐵磁Ni-Fe合金。然而，高導磁合金膜易受循環之感應電流或渦電流影響，尤其在較大膜厚度下更係如此。此等電流導致不期望損失，且其發生率與核心厚度之平方成比例。需求愈來愈大之 高頻率感測器需要較厚傳導核心，此已證明由於渦電流之增加之感應而難以使用高導磁合金來達成。該結果具有圖2中以材料沿易磁化方向中之較寬磁滯及較低經達成磁通量密度之形式所圖解說明之經降級磁性性質。
用以減小磁性材料中之渦電流之一種已知方法係層壓磁性材料與絕緣層。此技術已用於高功率變壓器以及微機械磁芯及電感器中。
在一項態樣中，本發明藉由提供用於以大於200奈米/分鐘之生長速率生長NiFe合金之磁性膜之PVD室而解決對先前技術之限制，此產生展現以下各項之膜：小於±2度之磁偏斜；小於±2度之磁分散；大於2%之DR/R；及小於50MPa之膜應力。該室達成在介於50瓦至9千瓦之範圍內之DC功率及介於3毫托至8毫托之範圍內之壓力下於2英吋至4英吋之距離處自目標濺鍍NiFe合金之方法。
在另一態樣中，室以具有配置在外圈及內圈之磁鐵之獨特場成形磁控管為特徵，該外圈磁鐵具有面向電極與濺鍍目標總成之北極，且該內圈具有面向該電極與濺鍍目標總成之南極，其中該等內圈及外圈圍繞該磁控管之周邊延伸，惟在兩個徑向相對區域中除外，在該等徑向相對區域中，該等內圈及外圈實質上朝向該磁控管之中心軸偏離。該磁控管藉由程序條件之適當調整而產生足以迅速生長高均勻性低應力膜之場均勻性，如本文中所闡述。
熟習此項技術者在連同附圖一起審閱說明性實施例之以下詳細說明後旋即將明瞭本發明之各種額外特徵及優點。
10‧‧‧物理汽相沈積濺鍍系統/薄膜濺鍍設備
12‧‧‧夾頭總成
14‧‧‧電磁鐵
16‧‧‧室/低壓處理室/處理室
18‧‧‧出口
20‧‧‧真空泵
22‧‧‧底板
24‧‧‧目標
25‧‧‧絕緣圈
26‧‧‧磁控管/磁控管源
27‧‧‧真空蓋
28‧‧‧進出閥
30‧‧‧基板
32‧‧‧安裝表面
34‧‧‧安裝台/台
36‧‧‧驅動機構
38‧‧‧軸
39‧‧‧波紋管
46‧‧‧電源供應器
48‧‧‧電源供應器
94‧‧‧基板表面
96‧‧‧控制器
98‧‧‧薄膜磁性材料
併入本說明書中且組成本說明書之一部分之附圖圖解說明本發明之實施例，並與上文所給出之本發明之一般說明及下文所給出之實施例之詳細說明一起用於闡釋本發明之原理。
圖1係高導磁合金(NiFe)薄膜之磁域之示意性圖解，其展示在沿易磁化(膜之平面)方向磁化之前及之後的域定向；圖2係根據先前技術生長之厚高導磁合金膜之B-H曲線圖，其以沿易磁化方向之增加之磁滯及非線性之形式展示磁性降級；圖3係在製作經改良高導磁合金膜中之根據本發明之原理所使用之物理汽相沈積(PVD)工具之圖解；圖4A係圖3之PVD工具中所使用之磁控管之佈局之平面圖，其展示磁極之新穎組態；圖4B係磁通量密度(B場)在圖3之PVD工具之基板載體之表面處之分散之曲線圖；圖5A係用於使用335nm厚度之高導磁合金層及10nm厚度之AlN層來形成最高達10μm之膜之基本堆疊單元之圖解；圖5B係包含四個335nm厚度之此等高導磁合金層之1.34μm膜之圖解；且圖5C係包含兩個670nm厚度之高導磁合金層之1.34μm膜之圖解。
圖6A展示根據本發明製作之薄高導磁合金膜之易磁化軸及難磁化軸之B-H迴線特性，其展示沿易磁化軸達成之窄磁滯迴線及相對較高磁通量密度，且圖6B展示此高導磁合金膜之DR/R曲線圖；圖7圖解說明用於如圖5B中所展示而形成之經層壓厚膜之B-H迴線；圖8係展示如圖5B中所展示而形成之經層壓厚膜之所量測膜應力隨所施加偏壓功率而變之曲線圖；圖9圖解說明用於如圖5C中所展示而形成之經層壓厚膜之B-H迴線；且圖10係大體根據圖5B而形成之高導磁合金層壓膜之SEM顯微圖，其展示明顯交替之經磁性定向膜及絕緣層。
首先參考圖3，展示物理汽相沈積(PVD)濺鍍系統。根據本發明之概念，PVD濺鍍系統(通常由元件符號10指定)用於在基板上產生材料薄膜。美國專利6,126,790及6,106,682中展示用於PVD濺鍍之室及磁鐵結構之細節。然而，將瞭解，PVD濺鍍系統10僅係例示性的，然而且本文中所含有之教示亦可應用於其他PVD系統。
參考圖3，薄膜濺鍍設備10包含併入有電磁鐵14之夾頭總成12。其他特徵包含低壓處理室16，該低壓處理室具有連接至用於自室16抽出空氣及電漿程序氣體之真空泵20之出口18。支撐高導磁合金(Ni81Fe19)之目標24之電極或底板22與夾頭總成12相對，但本發明之原理可應用於其他軟或硬磁性材料之使用，諸如鐵磁合金NiFe、FeTaN、FeAlN、FeCrHfN、NeFeRe、Sendust或Copt。
磁控管26提供電能且在濺鍍操作期間調節目標24之侵蝕。磁控管源26可為DC磁控管或RF磁控管PVD能源。此外，亦可使用非磁控管能源，諸如RD二極體。底板22接收用於目標濺鍍之電力且使用絕緣圈25與真空蓋27電隔離。進出閥28提供用於將基板30移入及移出室16(例如，使用叢集工具中之中央水處置器)之可再密封開口。
基板30支撐於夾頭總成12之安裝表面32上。安裝表面32係可經配置以調節基板溫度之安裝台34之部分。舉例而言，台34可併入有加熱單元、冷卻單元或兩者。台34與基板30之間的熱交換可藉由傳熱氣體而促進。美國專利6,138,745中可見用於調節基板溫度之夾頭總成之較詳細實例，該美國專利特此以引用方式併入。夾頭總成12亦可提供用於基板之電偏壓(諸如RF偏壓)之能力。
驅動機構36沿著軸38朝向或遠離目標24平移夾頭總成12以便控制基板至目標間隔。波紋管39將夾頭總成12密封至處理室16以適應夾頭總成平移高度之範圍及以大氣壓方式將夾頭總成12之組件(包含電磁鐵14)與處理室16之經抽空空間隔離。由控制器96操作之電源供應 器46及48實施基板及磁性驅動之期望定位。
濺鍍及退火操作將薄膜磁性材料98鋪設於基板表面94上並處理薄膜磁性材料98。用於將膜鋪設於基板上之程序係已知的。第5,630,916號美國專利闡述併入至夾頭總成中用於磁性地定向此薄磁性膜之板狀電磁鐵。此專利之相關說明亦以引用方式併入。
圖4A展示磁鐵在磁控管中之佈局，且圖4B展示藉由此組態達成之B場之分散。如圖4A中可見，磁控管包含配置有面向目標之北極之磁鐵之外圈；該外圈在兩個徑向相對區域中朝向磁控管之中心軸偏離，每一區域關於磁控管為約60度之徑向寬度。在第一偏離徑向區域中，外圈距中心軸之距離減小約四分之一，且在第二相對徑向區域中，外圈距中心軸之距離減小約四分之三。磁控管亦包含配置有面向目標之南極之磁鐵之內圈；該內圈在第一及第二相對徑向區域中朝向磁控管之中心軸偏離，該等第一及第二相對徑向區域對應於其中外圈偏離之區域。在第一徑向區域中，內圈距中心軸之距離減小約三分之一，且在第二相對徑向區域中，外圈實質上向內偏離至中心軸。
在此組態下，磁性地對準之NiFe以>500nm/min之速率沈積而不具有先前目標調節步驟，從而導致小於40sec之程序時間/335nm厚膜之層板。晶圓溫度在整個程序中被控制在150℃下以保持磁性膜性質。應力維持在100MPa(拉力)下。
在適當工具組態下，小於25min/晶圓之輸送量可針對用於~10000nm之總堆疊之333nm NiFe/10nm交替絕緣膜(如AlN)而達成。
下表中陳述工具組態之參數及用於每一參數之範圍、標稱、低速率及高速率設定：
室在高導磁合金膜、高導磁合金層板、AlN絕緣層及TaN絕緣層之生長中之效能經量測如下：
圖3中所展示之室可用於生長變化厚度之膜，如在圖5A、5B及5C中可見。特定而言，PVD濺鍍程序可用於沈積用於磁性感測器應用之薄Ni81Fe19(高導磁合金)膜，如在上述表之第一行中所闡釋。圖6A 及圖6B展示以此方式沈積之薄NiFe膜之B-H迴線特性及DR/R曲線圖，其等展示良好特性(窄磁滯迴線、高飽和通量密度)。
已藉由在介於300nm至750nm之間的NiFe層與介於5nm至10nm之間的絕緣層之間進行交替以形成層壓結構而沈積最高達總共15000nm之NiFe，如上述表之第二行及第三行中所展示。圖5A圖解說明交替之335nm NiFe及10nm AlN層之標準構建單元；圖5B圖解說明重複四次以形成1.34微米膜之此標準構建單元。圖7圖解說明針對具有圖5B中所展示之結構之1.34μm層壓膜之B-H迴線及所達成磁通量密度值。
根據磁性性質之可能減小，亦可沈積較厚高導磁合金膜。作為一項實例，圖5C展示由兩個670nm高導磁合金層及一個10nm AlN層形成之1.34微米堆疊。對於約1μm及高於1μm之膜，NiFe以層壓形式沈積，其中NiFe層與絕緣層(諸如AlN)散置在一起。層壓結構確保磁性定向固定在膜之平面中且抑制將驅動垂直於膜平面之磁性定向之「條帶域」之形成，且層壓結構亦減小渦電流之機會。圖9圖解說明針對具有圖5C中所展示之結構之1.34μm層壓膜之B-H迴線及所達成磁通量密度值。
絕緣層可由AlN或替代地TaN形成，其中具有類似結果，如上述表之最後行中所展示。
為使輸送量最佳化，較厚NiFe膜需要高沈積速率。此高速率在基板處產生高溫度，且因此良好基板冷卻對於使磁性性質之降級最小化係關鍵的。另外，磁控管必須為最佳設計以達成具有均勻沈積之高速率濺鍍而不擾亂膜之磁性定向。
本文中所闡述之層壓程序准許對膜應力之控制，此特別係對於較厚膜而言出於黏附原因且為使可干擾裝置效能之基板彎曲最小化以及減小磁致伸縮效應而係關鍵的。圖8展示可如何透過在沈積期間將RF產生之偏壓施加於基板上容易地將膜應力自拉力調諧為壓縮力。 在約80瓦之RF偏壓功率下達成接近零之膜應力。
圖10中之NiFe層壓膜之SEM顯微圖清楚地展示明顯交替之經磁性定向膜及絕緣層。
儘管已藉由本發明之特定實施例之說明而圖解說明本發明且儘管相當詳細地闡述了該等實施例，但並不意欲將隨附申請專利範圍之範疇約束或以任何方式限制於此細節。本文中所論述之各種特徵可單獨使用或以任何組合方式使用。熟習此項技術者將易於明瞭額外優點及修改。在本發明之較廣泛態樣中，本發明因此並不限於所展示及所闡述之具體細節、代表性設備及方法及說明性實例。因此，在不背離一般發明概念之範疇或精神之情況下可對此等細節做出變更。
10‧‧‧物理汽相沈積濺鍍系統/薄膜濺鍍設備
12‧‧‧夾頭總成
14‧‧‧電磁鐵
16‧‧‧室/低壓處理室/處理室
18‧‧‧出口
20‧‧‧真空泵
22‧‧‧底板
24‧‧‧目標
25‧‧‧絕緣圈
26‧‧‧磁控管/磁控管源
27‧‧‧真空蓋
28‧‧‧進出閥
30‧‧‧基板
32‧‧‧安裝表面
34‧‧‧安裝台/台
36‧‧‧驅動機構
38‧‧‧軸
39‧‧‧波紋管
46‧‧‧電源供應器
48‧‧‧電源供應器
94‧‧‧基板表面
96‧‧‧控制器
98‧‧‧薄膜磁性材料

Claims (15)

  1. 一種使用濺鍍程序以大於200奈米/分鐘之生長速率生長NiFe合金之磁性膜之方法，該膜展現以下各項中之一或多者：a.小於±2度之磁偏斜；b.小於±2度之磁分散；c.大於2%之DR/R；及d.小於50MPa之膜應力該方法包括在介於50瓦至9千瓦之範圍內之DC功率及介於3毫托至8毫托之範圍內之壓力下在2英吋至4英吋之距離處自與目標間隔開之NiFe合金目標進行濺鍍。
  2. 如請求項1之方法，其進一步包括在介於0至700瓦之範圍內之RF功率下進行濺鍍。
  3. 如請求項2之方法，其進一步包括在介於400瓦至700瓦之範圍內之RF功率下進行濺鍍。
  4. 如請求項1之方法，其進一步包括將該所施加RF功率調整至經選擇以減小膜應力之約80瓦之標稱值。
  5. 如請求項1之方法，其進一步包括在將電磁鐵工作循環控制在30%與50%之間時進行濺鍍。
  6. 如請求項1之方法，其進一步包括在將電磁鐵電流控制在5安與15安之間時進行濺鍍。
  7. 如請求項1之方法，其進一步包括在將電磁鐵頻率控制在約0.25Hz時進行濺鍍。
  8. 一種用於使用濺鍍程序以大於200奈米/分鐘之生長速率生長NiFe合金之磁性膜之濺鍍工具，該濺鍍工具包括：a.真空室； b.真空泵，其用於將該室抽空；c.夾頭，其支撐待濺鍍之基板；d.電極與濺鍍目標總成，其包括待濺鍍至該基板之材料；e.磁控管，其定位於與該夾頭相對的該電極與濺鍍目標總成之一側上；及f.電力源，其用於引起自該目標之濺鍍；其中該磁控管包括配置在外圈及內圈之磁鐵，該等外圈磁鐵具有面向該電極與濺鍍目標總成之北極，且該內圈具有面向該電極與濺鍍目標總成之南極，其中該外圈圍繞該磁控管之周邊延伸，惟在兩個徑向相對區域中除外，在該等徑向相對區域中，該外圈朝向該磁控管之中心軸偏離；且其中該內圈在該外圈之徑向內側圍繞該磁控管延伸，該內圈在該兩個徑向相對區域中朝向該磁控管之中心軸偏離。
  9. 如請求項8之濺鍍工具，其中該等徑向相對區域在徑向寬度上係約60度。
  10. 如請求項8之濺鍍工具，其中在第一徑向區域中，該外圈距該中心軸之距離減小約四分之一。
  11. 如請求項10之濺鍍工具，其中在第二徑向區域中，該外圈距該中心軸之該距離減小約四分之三。
  12. 如請求項8之濺鍍工具，其中在第二徑向區域中，該外圈距該中心軸之該距離減小約四分之三。
  13. 如請求項8之濺鍍工具，其中在第一徑向區域中，該內圈距該中心軸之距離減小約三分之一。
  14. 如請求項13之濺鍍工具，其中在第二徑向區域中，該內圈實質上偏離至該中心軸。
  15. 如請求項8之濺鍍工具，其中在第二徑向區域中，該內圈實質上偏離至該中心軸。
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