JP4881620B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP4881620B2
JP4881620B2 JP2006001027A JP2006001027A JP4881620B2 JP 4881620 B2 JP4881620 B2 JP 4881620B2 JP 2006001027 A JP2006001027 A JP 2006001027A JP 2006001027 A JP2006001027 A JP 2006001027A JP 4881620 B2 JP4881620 B2 JP 4881620B2
Authority
JP
Japan
Prior art keywords
semiconductor chip
main surface
wiring board
wires
wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2006001027A
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English (en)
Japanese (ja)
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JP2007184385A5 (enExample
JP2007184385A (ja
Inventor
好彦 嶋貫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006001027A priority Critical patent/JP4881620B2/ja
Priority to US11/606,027 priority patent/US7889513B2/en
Priority to TW105106184A priority patent/TWI598971B/zh
Priority to TW102125650A priority patent/TWI531016B/zh
Priority to TW095144886A priority patent/TWI404148B/zh
Priority to CNA2006101562406A priority patent/CN1996584A/zh
Priority to KR1020070001430A priority patent/KR101286874B1/ko
Publication of JP2007184385A publication Critical patent/JP2007184385A/ja
Publication of JP2007184385A5 publication Critical patent/JP2007184385A5/ja
Priority to US12/985,815 priority patent/US20110159644A1/en
Application granted granted Critical
Publication of JP4881620B2 publication Critical patent/JP4881620B2/ja
Priority to US14/820,282 priority patent/US9991229B2/en
Priority to US15/990,750 priority patent/US10515934B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H10W90/00—
    • H10P72/74—
    • H10W46/00—
    • H10W70/65—
    • H10W74/014—
    • H10W74/111—
    • H10W74/117—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H10P72/7418—
    • H10W46/101—
    • H10W46/607—
    • H10W72/015—
    • H10W72/0198—
    • H10W72/07141—
    • H10W72/075—
    • H10W72/07504—
    • H10W72/07511—
    • H10W72/07521—
    • H10W72/07533—
    • H10W72/07553—
    • H10W72/531—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5434—
    • H10W72/5445—
    • H10W72/5449—
    • H10W72/547—
    • H10W72/5473—
    • H10W72/5522—
    • H10W72/5525—
    • H10W72/59—
    • H10W72/884—
    • H10W72/932—
    • H10W74/00—
    • H10W90/28—
    • H10W90/732—
    • H10W90/734—
    • H10W90/752—
    • H10W90/754—
    • H10W99/00—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Wire Bonding (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
JP2006001027A 2006-01-06 2006-01-06 半導体装置及びその製造方法 Expired - Lifetime JP4881620B2 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2006001027A JP4881620B2 (ja) 2006-01-06 2006-01-06 半導体装置及びその製造方法
US11/606,027 US7889513B2 (en) 2006-01-06 2006-11-30 Semiconductor device
TW105106184A TWI598971B (zh) 2006-01-06 2006-12-04 Semiconductor device
TW102125650A TWI531016B (zh) 2006-01-06 2006-12-04 Semiconductor device and manufacturing method thereof
TW095144886A TWI404148B (zh) 2006-01-06 2006-12-04 Semiconductor device and manufacturing method thereof
CNA2006101562406A CN1996584A (zh) 2006-01-06 2006-12-27 半导体器件及其制造方法
KR1020070001430A KR101286874B1 (ko) 2006-01-06 2007-01-05 반도체 장치 및 그 제조 방법
US12/985,815 US20110159644A1 (en) 2006-01-06 2011-01-06 Semiconductor device and a method of manufacturing the same
US14/820,282 US9991229B2 (en) 2006-01-06 2015-08-06 Semiconductor device
US15/990,750 US10515934B2 (en) 2006-01-06 2018-05-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006001027A JP4881620B2 (ja) 2006-01-06 2006-01-06 半導体装置及びその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011170871A Division JP5266371B2 (ja) 2011-08-04 2011-08-04 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2007184385A JP2007184385A (ja) 2007-07-19
JP2007184385A5 JP2007184385A5 (enExample) 2009-02-19
JP4881620B2 true JP4881620B2 (ja) 2012-02-22

Family

ID=38231802

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006001027A Expired - Lifetime JP4881620B2 (ja) 2006-01-06 2006-01-06 半導体装置及びその製造方法

Country Status (5)

Country Link
US (4) US7889513B2 (enExample)
JP (1) JP4881620B2 (enExample)
KR (1) KR101286874B1 (enExample)
CN (1) CN1996584A (enExample)
TW (3) TWI598971B (enExample)

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Publication number Priority date Publication date Assignee Title
JP4397408B2 (ja) * 2007-09-21 2010-01-13 株式会社新川 半導体装置及びワイヤボンディング方法
JP5205173B2 (ja) * 2008-08-08 2013-06-05 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
TWM356216U (en) * 2008-12-12 2009-05-01 Kun Yuan Technology Co Ltd Memory chip packaging module
JP5411553B2 (ja) * 2009-03-31 2014-02-12 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 半導体装置の製造方法
US8692370B2 (en) 2009-02-27 2014-04-08 Semiconductor Components Industries, Llc Semiconductor device with copper wire ball-bonded to electrode pad including buffer layer
US8384228B1 (en) * 2009-04-29 2013-02-26 Triquint Semiconductor, Inc. Package including wires contacting lead frame edge
KR101746614B1 (ko) 2011-01-07 2017-06-27 삼성전자 주식회사 발광소자 패키지 및 그 제조방법
JP5893266B2 (ja) * 2011-05-13 2016-03-23 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP6227223B2 (ja) * 2012-03-30 2017-11-08 富士通テン株式会社 半導体装置、及び半導体装置の製造方法
JP2014220439A (ja) * 2013-05-10 2014-11-20 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2016062962A (ja) * 2014-09-16 2016-04-25 株式会社東芝 ワイヤボンディング装置、及び半導体装置
JP2018137342A (ja) 2017-02-22 2018-08-30 株式会社村田製作所 半導体装置及びその製造方法
US10535812B2 (en) * 2017-09-04 2020-01-14 Rohm Co., Ltd. Semiconductor device
TWI767243B (zh) * 2020-05-29 2022-06-11 矽品精密工業股份有限公司 電子封裝件
JP2023082337A (ja) * 2021-12-02 2023-06-14 ローム株式会社 半導体装置
TWI810963B (zh) * 2022-06-07 2023-08-01 華東科技股份有限公司 增進打線接合承受力之晶片封裝結構
CN116884862B (zh) * 2023-09-07 2023-11-24 江苏长晶科技股份有限公司 一种基于3d打印的凸点制作方法及芯片封装结构
WO2025219055A1 (en) * 2024-04-19 2025-10-23 Ams-Osram International Gmbh Optoelectronic package and method for manufacturing an optoelectronic package

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JPS5041818Y1 (enExample) * 1968-12-16 1975-11-27
JPS5041818U (enExample) * 1973-08-13 1975-04-28
JP3011510B2 (ja) * 1990-12-20 2000-02-21 株式会社東芝 相互連結回路基板を有する半導体装置およびその製造方法
JP3595386B2 (ja) * 1995-09-12 2004-12-02 田中電子工業株式会社 半導体装置
US5905639A (en) * 1997-09-29 1999-05-18 Raytheon Company Three-dimensional component stacking using high density multichip interconnect decals and three-bond daisy-chained wedge bonds
JP3662461B2 (ja) * 1999-02-17 2005-06-22 シャープ株式会社 半導体装置、およびその製造方法
MY133357A (en) * 1999-06-30 2007-11-30 Hitachi Ltd A semiconductor device and a method of manufacturing the same
JP2001284370A (ja) * 2000-03-30 2001-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4439090B2 (ja) * 2000-07-26 2010-03-24 日本テキサス・インスツルメンツ株式会社 半導体装置及びその製造方法
JP4570809B2 (ja) * 2000-09-04 2010-10-27 富士通セミコンダクター株式会社 積層型半導体装置及びその製造方法
JP3631120B2 (ja) 2000-09-28 2005-03-23 沖電気工業株式会社 半導体装置
US6867493B2 (en) * 2000-11-15 2005-03-15 Skyworks Solutions, Inc. Structure and method for fabrication of a leadless multi-die carrier
JP4075306B2 (ja) * 2000-12-19 2008-04-16 日立電線株式会社 配線基板、ｌｇａ型半導体装置、及び配線基板の製造方法
US6894398B2 (en) * 2001-03-30 2005-05-17 Intel Corporation Insulated bond wire assembly for integrated circuits
US6787926B2 (en) * 2001-09-05 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Wire stitch bond on an integrated circuit bond pad and method of making the same
JP3685779B2 (ja) 2002-08-27 2005-08-24 株式会社新川 ワイヤボンディング方法、ワイヤボンディング装置及びワイヤボンディングプログラム
JP2004214249A (ja) * 2002-12-27 2004-07-29 Renesas Technology Corp 半導体モジュール
JP4615189B2 (ja) * 2003-01-29 2011-01-19 シャープ株式会社 半導体装置およびインターポーザチップ
JP3813135B2 (ja) * 2003-04-21 2006-08-23 株式会社新川 ワイヤボンディング方法
JP4308608B2 (ja) * 2003-08-28 2009-08-05 株式会社ルネサステクノロジ 半導体装置
JP4103796B2 (ja) * 2003-12-25 2008-06-18 沖電気工業株式会社 半導体チップパッケージ及びマルチチップパッケージ
KR100621547B1 (ko) * 2004-01-13 2006-09-14 삼성전자주식회사 멀티칩 패키지
KR100557540B1 (ko) * 2004-07-26 2006-03-03 삼성전기주식회사 Ｂｇａ 패키지 기판 및 그 제작 방법
US8324725B2 (en) * 2004-09-27 2012-12-04 Formfactor, Inc. Stacked die module

Also Published As

Publication number Publication date
TWI531016B (zh) 2016-04-21
TW201635402A (zh) 2016-10-01
US20070158392A1 (en) 2007-07-12
US20150348944A1 (en) 2015-12-03
TWI598971B (zh) 2017-09-11
TW200805526A (en) 2008-01-16
US9991229B2 (en) 2018-06-05
US20180277522A1 (en) 2018-09-27
KR20070074489A (ko) 2007-07-12
TWI404148B (zh) 2013-08-01
US20110159644A1 (en) 2011-06-30
JP2007184385A (ja) 2007-07-19
US7889513B2 (en) 2011-02-15
US10515934B2 (en) 2019-12-24
CN1996584A (zh) 2007-07-11
TW201347061A (zh) 2013-11-16
KR101286874B1 (ko) 2013-07-16

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