JP4878108B2 - 露光装置、デバイス製造方法、および測定装置 - Google Patents

露光装置、デバイス製造方法、および測定装置 Download PDF

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Publication number
JP4878108B2
JP4878108B2 JP2004207856A JP2004207856A JP4878108B2 JP 4878108 B2 JP4878108 B2 JP 4878108B2 JP 2004207856 A JP2004207856 A JP 2004207856A JP 2004207856 A JP2004207856 A JP 2004207856A JP 4878108 B2 JP4878108 B2 JP 4878108B2
Authority
JP
Japan
Prior art keywords
light
light source
source device
euv light
condensing point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2004207856A
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English (en)
Japanese (ja)
Other versions
JP2006032578A (ja
JP2006032578A5 (enExample
Inventor
武 山本
明 三宅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004207856A priority Critical patent/JP4878108B2/ja
Priority to DE602005025289T priority patent/DE602005025289D1/de
Priority to US11/181,192 priority patent/US7276710B2/en
Priority to EP05254383A priority patent/EP1617292B1/en
Publication of JP2006032578A publication Critical patent/JP2006032578A/ja
Publication of JP2006032578A5 publication Critical patent/JP2006032578A5/ja
Application granted granted Critical
Publication of JP4878108B2 publication Critical patent/JP4878108B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/009—Auxiliary arrangements not involved in the plasma generation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2004207856A 2004-07-14 2004-07-14 露光装置、デバイス製造方法、および測定装置 Expired - Fee Related JP4878108B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004207856A JP4878108B2 (ja) 2004-07-14 2004-07-14 露光装置、デバイス製造方法、および測定装置
DE602005025289T DE602005025289D1 (de) 2004-07-14 2005-07-13 Lichtquelle und dieselbe verwendende Belichtungsvorrichtung
US11/181,192 US7276710B2 (en) 2004-07-14 2005-07-13 Light source unit and exposure apparatus having the same
EP05254383A EP1617292B1 (en) 2004-07-14 2005-07-13 Light source unit and exposure apparatus having the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004207856A JP4878108B2 (ja) 2004-07-14 2004-07-14 露光装置、デバイス製造方法、および測定装置

Publications (3)

Publication Number Publication Date
JP2006032578A JP2006032578A (ja) 2006-02-02
JP2006032578A5 JP2006032578A5 (enExample) 2010-07-22
JP4878108B2 true JP4878108B2 (ja) 2012-02-15

Family

ID=35106785

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004207856A Expired - Fee Related JP4878108B2 (ja) 2004-07-14 2004-07-14 露光装置、デバイス製造方法、および測定装置

Country Status (4)

Country Link
US (1) US7276710B2 (enExample)
EP (1) EP1617292B1 (enExample)
JP (1) JP4878108B2 (enExample)
DE (1) DE602005025289D1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005235959A (ja) * 2004-02-18 2005-09-02 Canon Inc 光発生装置及び露光装置
US7164144B2 (en) * 2004-03-10 2007-01-16 Cymer Inc. EUV light source
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置
JP5025236B2 (ja) * 2006-11-29 2012-09-12 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
JP5149514B2 (ja) * 2007-02-20 2013-02-20 ギガフォトン株式会社 極端紫外光源装置
NL2003192A1 (nl) * 2008-07-30 2010-02-02 Asml Netherlands Bv Alignment of collector device in lithographic apparatus.
ATE536567T1 (de) * 2008-08-14 2011-12-15 Asml Netherlands Bv Strahlungsquelle und verfahren zur strahlungserzeugung
JP5168489B2 (ja) * 2008-09-12 2013-03-21 株式会社ニコン 計測装置、光源装置、露光装置及びデバイスの製造方法
US8283643B2 (en) * 2008-11-24 2012-10-09 Cymer, Inc. Systems and methods for drive laser beam delivery in an EUV light source
JP5670174B2 (ja) * 2010-03-18 2015-02-18 ギガフォトン株式会社 チャンバ装置および極端紫外光生成装置
JP5921548B2 (ja) * 2010-09-08 2016-05-24 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、ｅｕｖ放射発生装置、およびデバイス製造方法
US9029813B2 (en) * 2011-05-20 2015-05-12 Asml Netherlands B.V. Filter for material supply apparatus of an extreme ultraviolet light source
US9678431B2 (en) 2015-03-16 2017-06-13 Taiwan Semiconductor Manufacturing Company, Ltd. EUV lithography system and method with optimized throughput and stability
US9826615B2 (en) * 2015-09-22 2017-11-21 Taiwan Semiconductor Manufacturing Co., Ltd. EUV collector with orientation to avoid contamination
WO2018131146A1 (ja) * 2017-01-13 2018-07-19 ギガフォトン株式会社 極端紫外光生成システム

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4870289A (en) * 1987-09-25 1989-09-26 Matsushita Electric Industrial Co., Ltd. Apparatus for controlling relation in position between a photomask and a wafer
US5149972A (en) * 1990-01-18 1992-09-22 University Of Massachusetts Medical Center Two excitation wavelength video imaging microscope
JPH0697027A (ja) * 1992-09-10 1994-04-08 Toshiba Corp Ｘ線リソグラフィ装置
US5390203A (en) * 1994-06-13 1995-02-14 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for locking laser wavelength to an atomic transition
US6355570B1 (en) * 1998-03-04 2002-03-12 Hitachi, Ltd. Semiconductor manufacturing methods, plasma processing methods and plasma processing apparatuses
JP3833810B2 (ja) * 1998-03-04 2006-10-18 株式会社日立製作所 半導体の製造方法並びにプラズマ処理方法およびその装置
JP2000056099A (ja) * 1998-08-13 2000-02-25 Nikon Corp Ｘ線照射装置及びｘ線発生位置検出器
JP4273574B2 (ja) * 1999-05-27 2009-06-03 株式会社ニコン Ｘ線発生装置及びこれを有するｘ線露光装置及びｘ線の発生方法
US6324255B1 (en) 1998-08-13 2001-11-27 Nikon Technologies, Inc. X-ray irradiation apparatus and x-ray exposure apparatus
JP2000346817A (ja) * 1999-06-07 2000-12-15 Nikon Corp 測定装置、照射装置および露光方法
JP2001032096A (ja) 1999-07-23 2001-02-06 Daihatsu Motor Co Ltd 自動車車体の電着塗装方法
WO2001020733A1 (en) * 1999-09-10 2001-03-22 Nikon Corporation Light source and wavelength stabilization control method, exposure apparatus and exposure method, method for producing exposure apparatus, and device manufacturing method and device
JP2001267239A (ja) * 2000-01-14 2001-09-28 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP4505664B2 (ja) 2000-03-24 2010-07-21 株式会社ニコン Ｘ線発生装置
JP2002006096A (ja) * 2000-06-23 2002-01-09 Nikon Corp 電磁波発生装置、これを用いた半導体製造装置並びに半導体デバイスの製造方法
US6826424B1 (en) * 2000-12-19 2004-11-30 Haishan Zeng Methods and apparatus for fluorescence and reflectance imaging and spectroscopy and for contemporaneous measurements of electromagnetic radiation with multiple measuring devices
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4298336B2 (ja) 2002-04-26 2009-07-15 キヤノン株式会社 露光装置、光源装置及びデバイス製造方法
JP2004128105A (ja) * 2002-10-01 2004-04-22 Nikon Corp Ｘ線発生装置及び露光装置
JP2005294087A (ja) * 2004-04-01 2005-10-20 Nikon Corp 光源ユニット、照明光学装置、露光装置および露光方法
JP4574211B2 (ja) * 2004-04-19 2010-11-04 キヤノン株式会社 光源装置、当該光源装置を有する露光装置

Also Published As

Publication number Publication date
EP1617292A2 (en) 2006-01-18
US20060011870A1 (en) 2006-01-19
JP2006032578A (ja) 2006-02-02
EP1617292B1 (en) 2010-12-15
EP1617292A3 (en) 2009-05-20
DE602005025289D1 (de) 2011-01-27
US7276710B2 (en) 2007-10-02

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